Inventor · disambiguated record
Amlan Majumdar
Also filed as: MAJUMDAR AMLAN
124 granted patents·34 pending applications·1,395 citations·filing 2004–2023
99Inventor score
Top patents by PatentIndex Score
158 records- 0199US9287362B1Vertical field effect transistors with controlled overlap between gate electrode and source/drain contactsIBM·Filed 2014·Granted Mar 15, 2016·62 cites·10 claims
- 0298US7898041B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2007·Granted Mar 1, 2011·113 cites·20 claims
- 0398US7547637B2Methods for patterning a semiconductor filmINTEL CORP·Filed 2005·Granted Jun 16, 2009·52 cites·8 claims
- 0498US7449373B2Method of ion implanting for tri-gate devicesINTEL CORP·Filed 2006·Granted Nov 11, 2008·74 cites·19 claims
- 0598US7279375B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2005·Granted Oct 9, 2007·93 cites·12 claims
- 0698US7170120B2Carbon nanotube energy well (CNEW) field effect transistorINTEL CORP·Filed 2005·Granted Jan 30, 2007·149 cites·15 claims
- 0797US9287360B1III-V nanowire FET with compositionally-graded channel and wide-bandgap coreIBM·Filed 2015·Granted Mar 15, 2016·22 cites·11 claims
- 0897US8937299B2III-V finFETs on silicon substrateIBM·Filed 2013·Granted Jan 20, 2015·40 cites·10 claims
- 0997US8012820B2Ultra-thin SOI CMOS with raised epitaxial source and drain and embedded SiGe PFET extensionIBM·Filed 2011·Granted Sep 6, 2011·38 cites·13 claims
- 1097US7985633B2Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistorsIBM·Filed 2007·Granted Jul 26, 2011·57 cites·5 claims
- 1197US7652332B2Extremely-thin silicon-on-insulator transistor with raised source/drainIBM·Filed 2007·Granted Jan 26, 2010·50 cites·13 claims
- 1296US9397226B2Vertical field effect transistors with controlled overlap between gate electrode and source/drain contactsIBM·Filed 2015·Granted Jul 19, 2016·12 cites·14 claims
- 1396US8324940B2Nanowire circuits in matched devicesBANGSARUNTIP SARUNYA·Filed 2010·Granted Dec 4, 2012·18 cites·11 claims
- 1496US8071983B2Semiconductor device structures and methods of forming semiconductor structuresBRASK JUSTIN K·Filed 2009·Granted Dec 6, 2011·29 cites·20 claims
- 1595US8030145B2Back-gated fully depleted SOI transistorIBM·Filed 2010·Granted Oct 4, 2011·23 cites·21 claims
- 1694US8324030B2Nanowire tunnel field effect transistorsBANGSARUNTIP SARUNYA·Filed 2010·Granted Dec 4, 2012·17 cites·14 claims
- 1794US8258031B2Fabrication of a vertical heterojunction tunnel-FETLAUER ISAAC·Filed 2010·Granted Sep 4, 2012·19 cites·16 claims
- 1893US9337309B1Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channelsIBM·Filed 2015·Granted May 10, 2016·7 cites·6 claims
- 1993US9070770B2Low interfacial defect field effect transistorIBM·Filed 2013·Granted Jun 30, 2015·12 cites·15 claims
- 2093US8178400B2Replacement spacer for tunnel FETsCHANG JOSEPHINE B·Filed 2009·Granted May 15, 2012·21 cites·16 claims
- 2193US7871869B2Extremely-thin silicon-on-insulator transistor with raised source/drainIBM·Filed 2009·Granted Jan 18, 2011·24 cites·7 claims
- 2292US9263260B1Nanowire field effect transistor with inner and outer gatesIBM·Filed 2014·Granted Feb 16, 2016·10 cites·11 claims
- 2392US9064942B2Nanowire capacitor for bidirectional operationIBM·Filed 2013·Granted Jun 23, 2015·13 cites·25 claims
- 2492US8673699B2Semiconductor structure having NFET extension last implantsADAM THOMAS N·Filed 2012·Granted Mar 18, 2014·17 cites·11 claims
- 2592US7858481B2Method for fabricating transistor with thinned channelINTEL CORP·Filed 2005·Granted Dec 28, 2010·28 cites·5 claims
- 2691US9496347B1Graded buffer epitaxy in aspect ratio trappingIBM·Filed 2015·Granted Nov 15, 2016·7 cites·20 claims
- 2791US8933458B2Semiconductor device structures and methods of forming semiconductor structuresINTEL CORP·Filed 2013·Granted Jan 13, 2015·6 cites·9 claims
- 2891US8546203B1Semiconductor structure having NFET extension last implantsCHENG KANGGUO·Filed 2012·Granted Oct 1, 2013·14 cites·23 claims
- 2990US8685847B2Semiconductor device having localized extremely thin silicon on insulator channel regionMAJUMDAR AMLAN·Filed 2010·Granted Apr 1, 2014·24 cites·20 claims
- 3090US7915167B2Fabrication of channel wraparound gate structure for field-effect transistorINTEL CORP·Filed 2005·Granted Mar 29, 2011·12 cites·20 claims
- 3190US7648868B2Metal-gated MOSFET devices having scaled gate stack thicknessIBM·Filed 2007·Granted Jan 19, 2010·15 cites·20 claims
- 3289US9564514B2Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channelsIBM·Filed 2015·Granted Feb 7, 2017·5 cites·11 claims
- 3389US9368574B1Nanowire field effect transistor with inner and outer gatesIBM·Filed 2015·Granted Jun 14, 2016·5 cites·8 claims
- 3489US8603894B2Stressed source/drain CMOS and method for forming sameMAJUMDAR AMLAN·Filed 2012·Granted Dec 10, 2013·11 cites·15 claims
- 3589US8581258B2Semiconductor device structures and methods of forming semiconductor structuresBRASK JUSTIN K·Filed 2011·Granted Nov 12, 2013·6 cites·9 claims
- 3689US8440552B1Method to form low series resistance transistor devices on silicon on insulator layerCHEN KANGGUO·Filed 2012·Granted May 14, 2013·17 cites·18 claims
- 3788US9691856B2Extreme high mobility CMOS logicINTEL CORP·Filed 2015·Granted Jun 27, 2017·3 cites·18 claims
- 3888US9653606B2Fabrication process for mitigating external resistance of a multigate deviceIBM·Filed 2015·Granted May 16, 2017·4 cites·20 claims
- 3988US9508640B2Multiple via structure and methodGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 29, 2016·9 cites·17 claims
- 4088US9337255B1Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channelsIBM·Filed 2014·Granted May 10, 2016·7 cites·11 claims
- 4188US9136357B1Fabrication process for mitigating external resistance and interface state density in a multigate deviceIBM·Filed 2014·Granted Sep 15, 2015·9 cites·20 claims
- 4288US7713803B2Mechanism for forming a remote delta doping layer of a quantum well structureINTEL CORP·Filed 2007·Granted May 11, 2010·12 cites·9 claims
- 4388US7608883B2Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectricINTEL CORP·Filed 2008·Granted Oct 27, 2009·13 cites·6 claims
- 4488US7342277B2Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectricINTEL CORP·Filed 2005·Granted Mar 11, 2008·13 cites·12 claims
- 4587US10937907B2Method for fabricating transistor with thinned channelINTEL CORP·Filed 2019·Granted Mar 2, 2021·2 cites·20 claims
- 4686US9553166B1Asymmetric III-V MOSFET on silicon substrateIBM·Filed 2015·Granted Jan 24, 2017·4 cites·10 claims
- 4786US9123569B1Complementary metal-oxide-semiconductor structure with III-V and silicon germanium transistors on insulatorIBM·Filed 2014·Granted Sep 1, 2015·7 cites·20 claims
- 4886US9041061B2III-V device with overlapped extension regions using replacement gateIBM·Filed 2013·Granted May 26, 2015·7 cites·9 claims
- 4986US7993995B2Metal-gated MOSFET devices having scaled gate stack thickness including gettering species in a buried oxideIBM·Filed 2010·Granted Aug 9, 2011·7 cites·14 claims
- 5085US10249719B2Device isolation using preferential oxidation of the bulk substrateIBM·Filed 2017·Granted Apr 2, 2019·2 cites·20 claims
Showing the top 50 of 158 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →