Inventor · disambiguated record
Anirban Basu
Also filed as: BASU ANIRBAN · BASU JR ANIRBAN
71 granted patents·14 pending applications·278 citations·filing 2012–2023
98Inventor score
Top patents by PatentIndex Score
85 records- 0199US9287362B1Vertical field effect transistors with controlled overlap between gate electrode and source/drain contactsIBM·Filed 2014·Granted Mar 15, 2016·62 cites·10 claims
- 0297US9287360B1III-V nanowire FET with compositionally-graded channel and wide-bandgap coreIBM·Filed 2015·Granted Mar 15, 2016·22 cites·11 claims
- 0397US8937299B2III-V finFETs on silicon substrateIBM·Filed 2013·Granted Jan 20, 2015·40 cites·10 claims
- 0496US9397226B2Vertical field effect transistors with controlled overlap between gate electrode and source/drain contactsIBM·Filed 2015·Granted Jul 19, 2016·12 cites·14 claims
- 0593US9337309B1Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channelsIBM·Filed 2015·Granted May 10, 2016·7 cites·6 claims
- 0693US9070770B2Low interfacial defect field effect transistorIBM·Filed 2013·Granted Jun 30, 2015·12 cites·15 claims
- 0792US9263260B1Nanowire field effect transistor with inner and outer gatesIBM·Filed 2014·Granted Feb 16, 2016·10 cites·11 claims
- 0889US9564514B2Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channelsIBM·Filed 2015·Granted Feb 7, 2017·5 cites·11 claims
- 0989US9368574B1Nanowire field effect transistor with inner and outer gatesIBM·Filed 2015·Granted Jun 14, 2016·5 cites·8 claims
- 1088US9653606B2Fabrication process for mitigating external resistance of a multigate deviceIBM·Filed 2015·Granted May 16, 2017·4 cites·20 claims
- 1188US9337255B1Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channelsIBM·Filed 2014·Granted May 10, 2016·7 cites·11 claims
- 1288US9136357B1Fabrication process for mitigating external resistance and interface state density in a multigate deviceIBM·Filed 2014·Granted Sep 15, 2015·9 cites·20 claims
- 1388US8877574B1Elemental semiconductor material contact for high electron mobility transistorIBM·Filed 2013·Granted Nov 4, 2014·7 cites·9 claims
- 1486US9520496B2Charge carrier transport facilitated by strainIBM·Filed 2014·Granted Dec 13, 2016·4 cites·20 claims
- 1586US9270940B1Remote object sensing in videoIBM·Filed 2014·Granted Feb 23, 2016·12 cites·25 claims
- 1685US10249719B2Device isolation using preferential oxidation of the bulk substrateIBM·Filed 2017·Granted Apr 2, 2019·2 cites·20 claims
- 1785US10243050B2Device isolation using preferential oxidation of the bulk substrateIBM·Filed 2017·Granted Mar 26, 2019·2 cites·20 claims
- 1885US9666684B2III-V semiconductor device having self-aligned contactsGLOBALFOUNDRIES INC·Filed 2013·Granted May 30, 2017·5 cites·8 claims
- 1984US9276077B2Contact metallurgy for self-aligned high electron mobility transistorGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 1, 2016·7 cites·14 claims
- 2082US9484463B2Fabrication process for mitigating external resistance of a multigate deviceIBM·Filed 2014·Granted Nov 1, 2016·4 cites·16 claims
- 2182US9224866B2Suspended body field effect transistorGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 29, 2015·4 cites·13 claims
- 2281US9425312B2Silicon-containing, tunneling field-effect transistor including III-N sourceIBM·Filed 2014·Granted Aug 23, 2016·3 cites·14 claims
- 2379US9150434B2Electricity-less water disinfectionIBM·Filed 2012·Granted Oct 6, 2015·2 cites·20 claims
- 2478US10529855B2Charge carrier transport facilitated by strainIBM·Filed 2018·Granted Jan 7, 2020·1 cites·13 claims
- 2578US9865688B2Device isolation using preferential oxidation of the bulk substrateIBM·Filed 2014·Granted Jan 9, 2018·2 cites·5 claims
- 2678US9698046B2Fabrication of III-V-on-insulator platforms for semiconductor devicesIBM·Filed 2015·Granted Jul 4, 2017·2 cites·13 claims
- 2778US9318561B2Device isolation for III-V substratesIBM·Filed 2014·Granted Apr 19, 2016·2 cites·7 claims
- 2875US9997630B2Charge carrier transport facilitated by strainIBM·Filed 2016·Granted Jun 12, 2018·1 cites·12 claims
- 2975US9530921B2Multi-junction solar cellIBM·Filed 2014·Granted Dec 27, 2016·1 cites·4 claims
- 3075US9275546B2System and method for minimizing the time to park a vehicleIBM·Filed 2014·Granted Mar 1, 2016·6 cites·20 claims
- 3175US9159822B2III-V semiconductor device having self-aligned contactsIBM·Filed 2014·Granted Oct 13, 2015·3 cites·13 claims
- 3273US11349844B2Instant enforcement of centrally configured IT policiesMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2019·Granted May 31, 2022·2 cites·20 claims
- 3373US10978562B2Device isolation using preferential oxidation of the bulk substrateIBM·Filed 2020·Granted Apr 13, 2021·0 cites·20 claims
- 3473US9343569B2Vertical compound semiconductor field effect transistor on a group IV semiconductor substrateIBM·Filed 2014·Granted May 17, 2016·3 cites·20 claims
- 3572US11296881B2Using IP heuristics to protect access tokens from theft and replayMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2019·Granted Apr 5, 2022·2 cites·17 claims
- 3672US9773909B2Silicon-containing, tunneling field-effect transistor including III-N sourceIBM·Filed 2016·Granted Sep 26, 2017·1 cites·18 claims
- 3771US11494810B2Keyword bids determined from sparse dataADOBE INC·Filed 2019·Granted Nov 8, 2022·1 cites·20 claims
- 3870US11861664B2Keyword bids determined from sparse dataADOBE INC·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 3967US9324853B2III-V semiconductor device having self-aligned contactsIBM·Filed 2015·Granted Apr 26, 2016·1 cites·7 claims
- 4066US10559666B2Device isolation using preferential oxidation of the bulk substrateIBM·Filed 2019·Granted Feb 11, 2020·0 cites·20 claims
- 4164US10367065B2Device isolation for III-V substratesIBM·Filed 2018·Granted Jul 30, 2019·0 cites·20 claims
- 4264US8946009B2Low extension resistance III-V compound fin field effect transistorIBM·Filed 2013·Granted Feb 3, 2015·1 cites·8 claims
- 4364US8912609B2Low extension resistance III-V compound fin field effect transistorIBM·Filed 2013·Granted Dec 16, 2014·1 cites·12 claims
- 4464US2019378929A1Charge carrier transport facilitated by strainIBM·Filed 2019·Application pending·0 cites
- 4563US9263464B2Field effect transistors including contoured channels and planar channelsIBM·Filed 2014·Granted Feb 16, 2016·1 cites·20 claims
- 4662US10580926B2Multi-junction solar cellIBM·Filed 2016·Granted Mar 3, 2020·0 cites·5 claims
- 4762US10312400B2Multi-junction solar cellIBM·Filed 2016·Granted Jun 4, 2019·0 cites·6 claims
- 4862US9048363B2Elemental semiconductor material contact for high indium content InGaN light emitting diodesIBM·Filed 2013·Granted Jun 2, 2015·0 cites·18 claims
- 4961US10050110B2Device isolation for III-V substratesIBM·Filed 2017·Granted Aug 14, 2018·0 cites·7 claims
- 5061US8933434B2Elemental semiconductor material contact for GaN-based light emitting diodesIBM·Filed 2013·Granted Jan 13, 2015·0 cites·18 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →