Inventor · disambiguated record
Anhao Cheng
Also filed as: CHENG ANHAO
17 granted patents·28 pending applications·19 citations·filing 2016–2025
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD45
Top patents by PatentIndex Score
45 records- 0187US10541218B2Redistribution layer structure and fabrication method thereforTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 21, 2020·5 cites·20 claims
- 0286US11373970B2Semiconductor device having a redistribution lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·20 claims
- 0386US11227935B2Gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 0486US2025364395A1Structure and method for interlevel dielectric layer with regions of differing dielectric constantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0585US10431664B2Gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 1, 2019·5 cites·20 claims
- 0683US2025324721A1Partial metal grain size control to improve cmp loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0782US12400948B2Structure and method for interlevel dielectric layer with regions of differing dielectric constantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 0881US12166104B2Gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 0980US2025365994A1Capacitor structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1080US2025142848A1Barrier Layer for Metal Insulator Metal CapacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1180US2025366249A1Semiconductor devices and methods of fabricatimg the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1280US2025359087A1Metal-Oxide-Semiconductor Capacitors and Methods of Fabricating The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1379US10811314B2Method of forming semiconductor device having a dual material redistribution lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·2 cites·20 claims
- 1479US2025364465A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1578US12363987B2Partial metal grain size control to improve CMP loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·9 claims
- 1678US2025338522A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1777US9991189B2Semiconductor device having a dual material redistribution lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 5, 2018·2 cites·20 claims
- 1876US12027447B2Semiconductor device having a dual material redistribution lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 1976US2025351493A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2074US11799014B2Gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 2174US2025351571A1Semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2273US12211890B2Barrier layer for metal insulator metal capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 2372US11955421B2Structure and method for interlevel dielectric layer with regions of differing dielectric constantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 9, 2024·0 cites·20 claims
- 2471US2025089275A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2570US11410882B2Method of forming semiconductor device having a dual material redistribution line and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 2670US2024371634A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2770US2025046739A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2869US11978781B2Partial metal grain size control to improve CMP loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·0 cites·20 claims
- 2969US2025056819A1Capacitor structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3069US2025040157A1Metal-Oxide-Semiconductor Capacitors and Methods of Fabricating The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3168US12074024B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 3268US2024105751A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3367US2022302060A1Semiconductor device having a redistribution lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3467US2025063813A1Semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3566US12218181B2Barrier layer for metal insulator metal capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 4, 2025·0 cites·20 claims
- 3666US2025072070A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3765US2025123553A1System and method for patterned layer design and formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3864US2025385174A1Capacitors in interconnect structures of integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3959US2025210508A1Interconnect structure with capacitor and methods for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4055US2025228027A1Semiconductor structure including image sensor and mram deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4155US2025133715A1Semiconductor devices with gate extensions and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4254US2025022870A1Small dummy poly pattern insertion in small border regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4350US2024186397A1Large dimension metal gate field-effect transistor (fet) with metal gate dummy structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4449US2024071812A1Embedded soi structure for low leakage mos capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4548US2024021738A1Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →