Inventor · disambiguated record
Anthony G. Domenicucci
Also filed as: DOMENICUCCI ANTHONY · DOMENICUCCI ANTHONY G · DOMENICUCCI ANTHONY GENE
38 granted patents·4 pending applications·555 citations·filing 1997–2012
98Inventor score
Top patents by PatentIndex Score
42 records- 0198US7358166B2Relaxed, low-defect SGOI for strained Si CMOS applicationsIBM·Filed 2005·Granted Apr 15, 2008·62 cites·23 claims
- 0296US6991998B2Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transferIBM·Filed 2004·Granted Jan 31, 2006·101 cites·18 claims
- 0389US7705345B2High performance strained silicon FinFETs device and method for forming sameIBM·Filed 2004·Granted Apr 27, 2010·52 cites·18 claims
- 0486US8343825B2Reducing dislocation formation in semiconductor devices through targeted carbon implantationIBM·Filed 2011·Granted Jan 1, 2013·7 cites·21 claims
- 0584US6388327B1Capping layer for improved silicide formation in narrow semiconductor structuresIBM·Filed 2001·Granted May 14, 2002·31 cites·6 claims
- 0681US7473587B2High-quality SGOI by oxidation near the alloy melting temperatureIBM·Filed 2005·Granted Jan 6, 2009·7 cites·30 claims
- 0781US6946373B2Relaxed, low-defect SGOI for strained Si CMOS applicationsIBM·Filed 2002·Granted Sep 20, 2005·24 cites·22 claims
- 0880US8236709B2Method of fabricating a device using low temperature anneal processes, a device and design structureDOMENICUCCI ANTHONY G·Filed 2009·Granted Aug 7, 2012·6 cites·20 claims
- 0977US7442993B2Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transferIBM·Filed 2005·Granted Oct 28, 2008·4 cites·11 claims
- 1077US6335262B1Method for fabricating different gate oxide thicknesses within the same chipIBM·Filed 1999·Granted Jan 1, 2002·46 cites·8 claims
- 1175US8021982B2Method of silicide formation by adding graded amount of impurity during metal depositionIBM·Filed 2009·Granted Sep 20, 2011·4 cites·18 claims
- 1275US7956417B2Method of reducing stacking faults through annealingIBM·Filed 2010·Granted Jun 7, 2011·3 cites·6 claims
- 1375US6057220ATitanium polycide stabilization with a porous barrierIBM·Filed 1997·Granted May 2, 2000·36 cites·11 claims
- 1474US6387790B1Conversion of amorphous layer produced during IMP Ti depositionIBM·Filed 2000·Granted May 14, 2002·19 cites·19 claims
- 1572US7679141B2High-quality SGOI by annealing near the alloy melting pointIBM·Filed 2008·Granted Mar 16, 2010·3 cites·19 claims
- 1672US6475893B2Method for improved fabrication of salicide structuresIBM·Filed 2001·Granted Nov 5, 2002·16 cites·26 claims
- 1771US7816664B2Defect reduction by oxidation of siliconIBM·Filed 2008·Granted Oct 19, 2010·3 cites·11 claims
- 1871US7015469B2Electron holography methodIBM·Filed 2004·Granted Mar 21, 2006·8 cites·5 claims
- 1970US7049660B2High-quality SGOI by oxidation near the alloy melting temperatureIBM·Filed 2003·Granted May 23, 2006·11 cites·13 claims
- 2070US6875982B2Electron microscope magnification standard providing precise calibration in the magnification range 5000X-2000,000XIBM·Filed 2003·Granted Apr 5, 2005·8 cites·20 claims
- 2169US8227792B2Relaxed low-defect SGOI for strained SI CMOS applicationsAGNELLO PAUL D·Filed 2008·Granted Jul 24, 2012·4 cites·13 claims
- 2269US6495429B1Controlling internal thermal oxidation and eliminating deep divots in SIMOX by chlorine-based annealingIBM·Filed 2002·Granted Dec 17, 2002·20 cites·33 claims
- 2368US8021971B2Structure and method to form a thermally stable silicide in narrow dimension gate stacksIBM·Filed 2009·Granted Sep 20, 2011·3 cites·30 claims
- 2468US7348253B2High-quality SGOI by annealing near the alloy melting pointIBM·Filed 2004·Granted Mar 25, 2008·10 cites·13 claims
- 2567US6417567B1Flat interface for a metal-silicon contract barrier filmIBM·Filed 2000·Granted Jul 9, 2002·8 cites·20 claims
- 2666US7507988B2Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layerIBM·Filed 2007·Granted Mar 24, 2009·2 cites·1 claims
- 2765US7102145B2System and method for improving spatial resolution of electron holographyIBM·Filed 2004·Granted Sep 5, 2006·5 cites·18 claims
- 2865US6022801AMethod for forming an atomically flat interface for a highly disordered metal-silicon barrier filmIBM·Filed 1998·Granted Feb 8, 2000·23 cites·18 claims
- 2959US7881093B2Programmable precision resistor and method of programming the sameIBM·Filed 2008·Granted Feb 1, 2011·1 cites·10 claims
- 3059US7169226B2Defect reduction by oxidation of siliconIBM·Filed 2003·Granted Jan 30, 2007·6 cites·22 claims
- 3158US7214935B2Transmission electron microscopy sample preparation method for electron holographyIBM·Filed 2004·Granted May 8, 2007·3 cites·17 claims
- 3252US6509265B1Process for manufacturing a contact barrierIBM·Filed 2000·Granted Jan 21, 2003·4 cites·9 claims
- 3350US8490029B2Method of fabricating a device using low temperature anneal processes, a device and design structureDOMENICUCCI ANTHONY G·Filed 2012·Granted Jul 16, 2013·0 cites·11 claims
- 3449US7820501B2Decoder for a stationary switch machineIBM·Filed 2006·Granted Oct 26, 2010·0 cites·11 claims
- 3549US7208414B2Method for enhanced uni-directional diffusion of metal and subsequent silicide formationIBM·Filed 2004·Granted Apr 24, 2007·3 cites·23 claims
- 3648US6531411B1Surface roughness improvement of SIMOX substrates by controlling orientation of angle of starting materialIBM·Filed 2001·Granted Mar 11, 2003·5 cites·19 claims
- 3747US2007128867A1Method for enhanced uni-directional diffusion of metal and subsequent silicide formationIBM·Filed 2007·Application pending·0 cites
- 3844US6124639AFlat interface for a metal-silicon contact barrier filmIBM·Filed 1999·Granted Sep 26, 2000·7 cites·20 claims
- 3939US2012027956A1Modification of nitride top layerYANG DAEWON·Filed 2010·Application pending·0 cites
- 4039US2003094660A1Method for fabricating different gate oxide thickness within the same chipFiled 2001·Application pending·0 cites
- 4135US2002180046A1Method for producing a flat interface for a metal-silicon contact barrier filmIBM·Filed 2001·Application pending·0 cites
- 4230US6180521B1Process for manufacturing a contact barrierIBM·Filed 1999·Granted Jan 30, 2001·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →