Inventor · disambiguated record
Anupam Dutta
Also filed as: DUTTA ANUPAM
16 granted patents·9 pending applications·2 citations·filing 2014–2024
84Inventor score
Files withGLOBALFOUNDRIES US INC20SAMSUNG ELECTRONICS CO LTD2GLOBALFOUNDRIES INC1GLOBALFOUNDRIES SG PTE LTD1IBM1
Top patents by PatentIndex Score
25 records- 0192US12327776B1Heat sink for face bonded semiconductor deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Jun 10, 2025·2 cites·17 claims
- 0273US12211929B1Heterojunction bipolar transistors with terminals having a non-planar arrangementGLOBALFOUNDRIES US INC·Filed 2024·Granted Jan 28, 2025·0 cites·20 claims
- 0373US2025359098A1Heterojunction bipolar transistors with terminals having a non-planar arrangementGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 0468US11804491B2Devices with staggered body contactsGLOBALFOUNDRIES US INC·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 0566US12237407B2Heterojunction bipolar transistor with amorphous semiconductor regionsGLOBALFOUNDRIES US INC·Filed 2022·Granted Feb 25, 2025·0 cites·19 claims
- 0663US11476279B2Devices with staggered body contactsGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 18, 2022·0 cites·19 claims
- 0758US2025210607A1Heterojunction bipolar transistor wafers with backside sub-collector contactGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 0857US12356644B2Gate tunnel current-triggered semiconductor controlled rectifierGLOBALFOUNDRIES US INC·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 0957US12293994B2Semiconductor device integration with an amorphous regionGLOBALFOUNDRIES US INC·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 1057US12191300B2Integrated circuit structure with resistive semiconductor material for back wellGLOBALFOUNDRIES US INC·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 1157US2025359270A1Mos gate structure with dummy thermal viaGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1257US2025234653A1Silicon control rectifiersGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1356US2025210507A1Stacked trench capacitors and methods of making thereofGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 1455US12199147B2Semiconductor device including a body contact region and method of forming the sameGLOBALFOUNDRIES US INC·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 1555US12170329B2High voltage MOSFET device with improved breakdown voltageGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 17, 2024·0 cites·20 claims
- 1654US11444160B2Integrated circuit (IC) structure with body contact to well with multiple diode junctionsGLOBALFOUNDRIES US INC·Filed 2021·Granted Sep 13, 2022·0 cites·19 claims
- 1752US11411087B2Integrated circuit (IC) structure with high impedance semiconductor material between substrate and transistorGLOBALFOUNDRIES US INC·Filed 2021·Granted Aug 9, 2022·0 cites·20 claims
- 1852US2025221013A1Three dimensional serpentine resistorGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1951US10665667B2Junctionless/accumulation mode transistor with dynamic controlGLOBALFOUNDRIES INC·Filed 2018·Granted May 26, 2020·0 cites·20 claims
- 2050US2024429208A1Three-dimensional integrated circuit with top chip including schottky diode body contactGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 2142US11367790B2Body-contacted field effect transistors configured for test and methodsGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 21, 2022·0 cites·20 claims
- 2242US2015100580A1Method for managing communication records and electronic device thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2341US11288430B2Producing models for dynamically depleted transistors using systems having simulation circuitsGLOBALFOUNDRIES US INC·Filed 2017·Granted Mar 29, 2022·0 cites·20 claims
- 2433US9996650B2Modeling the performance of a field effect transistor having a dynamically depleted channel regionIBM·Filed 2015·Granted Jun 12, 2018·0 cites·17 claims
- 2531US2017193063A1Mobile device and method of acquiring and searching for information thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →