Inventor · disambiguated record
Andrea Gotti
Also filed as: GOTTI ANDREA
40 granted patents·4 pending applications·213 citations·filing 2006–2024
97Inventor score
Top patents by PatentIndex Score
44 records- 0198US9166158B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 20, 2015·28 cites·16 claims
- 0297US9543515B2Electrode materials and interface layers to minimize chalcogenide interface resistanceINTEL CORP·Filed 2013·Granted Jan 10, 2017·19 cites·7 claims
- 0396US10008665B1Doping of selector and storage materials of a memory cellINTEL CORP·Filed 2016·Granted Jun 26, 2018·24 cites·17 claims
- 0496US9257431B2Memory cell with independently-sized electrodeMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 9, 2016·25 cites·26 claims
- 0595US10256406B2Semiconductor structures including liners and related methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 9, 2019·12 cites·21 claims
- 0693US11373705B2Dynamically boosting read voltage for a memory deviceMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 28, 2022·4 cites·20 claims
- 0793US9716226B2Electrode materials and interface layers to minimize chalcogenide interface resistanceINTEL CORP·Filed 2016·Granted Jul 25, 2017·9 cites·11 claims
- 0893US9130157B2Memory cells having a number of conductive diffusion barrier materials and manufacturing methodsMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 8, 2015·13 cites·14 claims
- 0992US10217936B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 26, 2019·4 cites·20 claims
- 1092US9634245B2Structures incorporating and methods of forming metal lines including carbonMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 25, 2017·7 cites·19 claims
- 1191US10069069B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 4, 2018·4 cites·19 claims
- 1291US9054295B2Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materialsGOTTI ANDREA·Filed 2011·Granted Jun 9, 2015·15 cites·23 claims
- 1390US10062844B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 28, 2018·4 cites·18 claims
- 1490US9711717B2Memory cells having a number of conductive diffusion barrier materials and manufacturing methodsMICRON TECHNOLOGY INC·Filed 2015·Granted Jul 18, 2017·6 cites·11 claims
- 1586US10651381B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted May 12, 2020·2 cites·17 claims
- 1686US9299929B2Phase change memory cells including nitrogenated carbon materials, and related methodsMICRON TECHNOLOGY INC·Filed 2015·Granted Mar 29, 2016·5 cites·20 claims
- 1786US7584014B2Control unit for yarn-braking devices in weft feeders for looms, and tuning method thereforLGL ELECTRONICS SPA·Filed 2006·Granted Sep 1, 2009·12 cites·2 claims
- 1883US10680175B1Memory structures having improved write enduranceINTEL CORP·Filed 2018·Granted Jun 9, 2020·3 cites·27 claims
- 1981US9831428B2Memory cell with independently-sized electrodeMICRON TECHNOLOGY INC·Filed 2015·Granted Nov 28, 2017·2 cites·19 claims
- 2080US11038107B2Semiconductor devices including liners, and related systemsMICRON TECHNOLOGY INC·Filed 2018·Granted Jun 15, 2021·2 cites·23 claims
- 2177US10930849B2Techniques for forming memory structuresMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 23, 2021·1 cites·25 claims
- 2276US11195998B2Memory structures having improved write enduranceINTEL CORP·Filed 2020·Granted Dec 7, 2021·1 cites·18 claims
- 2375US8828788B2Forming electrodes for chalcogenide containing devicesERBETTA DAVIDE·Filed 2010·Granted Sep 9, 2014·5 cites·11 claims
- 2474US10777743B2Memory cell with independently-sized electrodeMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 15, 2020·1 cites·11 claims
- 2573US12205641B2Dynamically boosting read voltage for a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 21, 2025·0 cites·18 claims
- 2671US10347831B2Doping of selector and storage materials of a memory cellINTEL CORP·Filed 2018·Granted Jul 9, 2019·2 cites·16 claims
- 2770US10825987B2Fabrication of electrodes for memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 3, 2020·1 cites·9 claims
- 2869US2022376176A1Methods of forming electronic devices comprising metal oxide materialsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2968US11538988B2Memory device with multi-layer liner structureINTEL CORP·Filed 2019·Granted Dec 27, 2022·1 cites·19 claims
- 3067US11575085B2Techniques for forming memory structuresMICRON TECHNOLOGY INC·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 3167US11081644B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 3, 2021·0 cites·11 claims
- 3267US10957855B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 23, 2021·0 cites·12 claims
- 3367US10950791B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 16, 2021·0 cites·20 claims
- 3465US11444243B2Electronic devices comprising metal oxide materials and related methods and systemsMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 13, 2022·0 cites·22 claims
- 3563US2024237330A1Array Of Capacitors, Array Of Memory Cells, And Methods Used In Forming An Array Of CapacitorsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3662US11545623B2Fabrication of electrodes for memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 3, 2023·0 cites·16 claims
- 3762US2024268093A1Array Of Capacitors, Array Of Memory Cells, And Methods Used In Forming An Array Of CapacitorsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3860US11094879B2Structures incorporating and methods of forming metal lines including carbonMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 17, 2021·0 cites·19 claims
- 3959US10892406B2Phase change memory structures and devicesINTEL CORP·Filed 2018·Granted Jan 12, 2021·1 cites·23 claims
- 4058US10290800B2Memory cells having a number of conductive diffusion barrier materials and manufacturing methodsMICRON TECHNOLOGY INC·Filed 2017·Granted May 14, 2019·0 cites·21 claims
- 4158US10153428B2Structures incorporating and methods of forming metal lines including carbonMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 11, 2018·0 cites·16 claims
- 4256US11641788B2Resistive interface materialMICRON TECHNOLOGY INC·Filed 2020·Granted May 2, 2023·0 cites·25 claims
- 4351US12213325B2Techniques for manufacturing a double electrode memory arrayMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 28, 2025·0 cites·25 claims
- 4441US2006237567A1Positive yarn feeder for textile machines and the likeLGL ELECTRONICS SPA·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →