Inventor · disambiguated record
Anthony Copeland Jones
Also filed as: JONES ANTHONY C · JONES ANTHONY COPELAND
11 granted patents·1 pending application·164 citations·filing 1982–2011
91Inventor score
Top patents by PatentIndex Score
12 records- 0193US7419698B2Precursors for chemical vapor depositionSIGMA ALDRICH CO·Filed 2002·Granted Sep 2, 2008·38 cites·19 claims
- 0284US4604473APreparation of metal alkylsSECR DEFENCE BRIT·Filed 1984·Granted Aug 5, 1986·17 cites·10 claims
- 0382US4599150APreparation of adductsSECR DEFENCE BRIT·Filed 1984·Granted Jul 8, 1986·20 cites·13 claims
- 0473US7927661B2Methods of depositing a metal oxide layer or film using a rare earth metal precursorSIGMA ALDRICH CO·Filed 2004·Granted Apr 19, 2011·11 cites·21 claims
- 0571US4464233APreparation of adducts which may be used in the preparation of compound semiconductor materialsSECR DEFENCE BRIT·Filed 1982·Granted Aug 7, 1984·9 cites·9 claims
- 0666US5980978AFormation of a metalorganic compound for growing epitaxial semiconductor layersSECR DEFENCE·Filed 1995·Granted Nov 9, 1999·20 cites·24 claims
- 0762US6248928B1Metalorganic chemical vapor deposition precursorsINORGTECH LTD·Filed 2000·Granted Jun 19, 2001·4 cites·8 claims
- 0858US6383669B1Chemical vapor deposition precursorsSECR DEFENCE BRIT·Filed 1998·Granted May 7, 2002·23 cites·22 claims
- 0958US2011184156A1Precursors for deposition of metal oxide layers or filmsSIGMA ALDRICH CO·Filed 2011·Application pending·0 cites
- 1047US5886203AMetalorganic compoundsSECR DEFENCE·Filed 1995·Granted Mar 23, 1999·8 cites·9 claims
- 1139US6485784B1Precursors for growth of heterometal-oxide films by MOCVDQINETIQ LTD·Filed 1999·Granted Nov 26, 2002·9 cites·40 claims
- 1236US5830530AChemical vapor deposition of tin oxide filmsEPICHEM LTD·Filed 1995·Granted Nov 3, 1998·5 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →