Inventor · disambiguated record
Andrew Joseph Kelly
Also filed as: KELLY ANDREW JOSEPH
35 granted patents·3 pending applications·282 citations·filing 2011–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD27TAIWAN SEMICONDUCTOR MFG6KELLY ANDREW JOSEPH3CHIEN PEI-SHAN1WANN CLEMENT HSINGJEN1
Top patents by PatentIndex Score
38 records- 0198US11437480B2Forming a cavity with a wet etch for backside contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·20 claims
- 0297US9324820B1Method for forming semiconductor structure with metallic layer over source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 26, 2016·23 cites·20 claims
- 0397US9166010B2FinFET device with epitaxial structureTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Oct 20, 2015·49 cites·20 claims
- 0496US11942527B2Forming a cavity with a wet etch for backside contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
- 0596US9029930B2FinFET device with epitaxial structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 12, 2015·28 cites·20 claims
- 0696US8703556B2Method of making a FinFET deviceKELLY ANDREW JOSEPH·Filed 2012·Granted Apr 22, 2014·106 cites·20 claims
- 0795US10163623B1Etch method with surface modification treatment for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·14 cites·20 claims
- 0894US9177785B1Thin oxide formation by wet chemical oxidation of semiconductor surface when the one component of the oxide is water solubleTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·14 cites·18 claims
- 0989US8872284B2FinFET with metal gate stressorKELLY ANDREW JOSEPH·Filed 2012·Granted Oct 28, 2014·8 cites·20 claims
- 1087US12272733B2Transistor device for source/drain backside contact and method of forming cavityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
- 1187US9240484B2FinFET with metal gate stressorTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jan 19, 2016·4 cites·17 claims
- 1285US9385197B2Semiconductor structure with contact over source/drain structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 5, 2016·4 cites·20 claims
- 1384US9911806B2Solvent-based oxidation on germanium and III-V compound semiconductor materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 6, 2018·4 cites·12 claims
- 1483US2025234583A1Forming a cavity with a wet etch for backside contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1582US10763114B2Method of fabricating gate oxide of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 1, 2020·2 cites·20 claims
- 1682US8901665B2Gate structure for semiconductor deviceKELLY ANDREW JOSEPH·Filed 2011·Granted Dec 2, 2014·7 cites·16 claims
- 1781US11145544B2Contact etchback in room temperature ionic liquidTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·2 cites·20 claims
- 1878US8759920B2Semiconductor device and method of forming the sameWANN CLEMENT HSINGJEN·Filed 2012·Granted Jun 24, 2014·4 cites·16 claims
- 1975US11257671B2Method and system of control of epitaxial growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·1 cites·20 claims
- 2075US9054213B2FinFET with metal gate stressorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 9, 2015·2 cites·20 claims
- 2175US2023343595A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2274US11600716B2Method for forming semiconductor structure with contact over source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·0 cites·20 claims
- 2371US11101149B2Semiconductor fabrication with electrochemical apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 24, 2021·0 cites·20 claims
- 2469US11728169B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·0 cites·20 claims
- 2568US11869769B2Method and system of control of epitaxial growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 2667US9412605B2Method of removing oxide on semiconductor surface by layer of sulfurTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·1 cites·20 claims
- 2766US10720344B2Semiconductor fabrication with electrochemical apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 21, 2020·0 cites·20 claims
- 2863US12506029B2Gap filling method in semiconductor manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 2963US10854736B2Method for forming semiconductor structure with contact over source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·0 cites·20 claims
- 3060US10468275B2Semiconductor fabrication with electrochemical apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·0 cites·20 claims
- 3159US9263277B2Metal gate structure of a semiconductor deviceCHIEN PEI-SHAN·Filed 2012·Granted Feb 16, 2016·2 cites·16 claims
- 3258USRE48942EFinFET device with epitaxial structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 22, 2022·0 cites·31 claims
- 3358US10056472B2Method for forming semiconductor structure with contact over source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 21, 2018·0 cites·20 claims
- 3454US9373549B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 21, 2016·0 cites·20 claims
- 3552US9882017B2Thin oxide formation by wet chemical oxidation of semiconductor surface when the one component of the oxide is water solubleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 30, 2018·0 cites·22 claims
- 3652US2023402312A1Method for filling trench in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3745US10134871B2Doping of high-K dielectric oxide by wet chemical treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 20, 2018·0 cites·20 claims
- 3843US9761440B2Surface passivation on indium-based materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →