Inventor · disambiguated record
Anisul Khan
Also filed as: KHAN ANISUL · KHAN ANISUL H · KHAN ANISUL HAQUE
32 granted patents·12 pending applications·1,032 citations·filing 1999–2020
97Inventor score
Top patents by PatentIndex Score
44 records- 0198US6642127B2Method for dicing a semiconductor waferAPPLIED MATERIALS INC·Filed 2001·Granted Nov 4, 2003·274 cites·22 claims
- 0292US8932947B1Methods for forming a round bottom silicon trench recess for semiconductor applicationsHAN JOO WON·Filed 2013·Granted Jan 13, 2015·98 cites·20 claims
- 0391US6380095B1Silicon trench etch using silicon-containing precursors to reduce or avoid mask erosionAPPLIED MATERIALS INC·Filed 2000·Granted Apr 30, 2002·66 cites·21 claims
- 0491US6318384B1Self cleaning method of forming deep trenches in silicon substratesAPPLIED MATERIALS INC·Filed 1999·Granted Nov 20, 2001·88 cites·35 claims
- 0589US6759340B2Method of etching a trench in a silicon-on-insulator (SOI) structureFiled 2002·Granted Jul 6, 2004·45 cites·29 claims
- 0687US6372655B2Two etchant etch methodAPPLIED MATERIALS INC·Filed 2001·Granted Apr 16, 2002·31 cites·17 claims
- 0786US6827869B2Method of micromachining a multi-part cavityFiled 2002·Granted Dec 7, 2004·43 cites·21 claims
- 0886US6696365B2Process for in-situ etching a hardmask stackAPPLIED MATERIALS INC·Filed 2002·Granted Feb 24, 2004·38 cites·5 claims
- 0983US6979652B2Etching multi-shaped openings in siliconAPPLIED MATERIALS INC·Filed 2002·Granted Dec 27, 2005·30 cites·28 claims
- 1083US6391788B1Two etchant etch methodAPPLIED MATERIALS INC·Filed 2000·Granted May 21, 2002·22 cites·61 claims
- 1182US6518192B2Two etchant etch methodAPPLIED MATERIALS INC·Filed 2001·Granted Feb 11, 2003·20 cites·18 claims
- 1280US6802933B2Apparatus for performing self cleaning method of forming deep trenches in silicon substratesFiled 2000·Granted Oct 12, 2004·19 cites·18 claims
- 1380US6583063B1Plasma etching of silicon using fluorinated gas mixturesAPPLIED MATERIALS INC·Filed 1999·Granted Jun 24, 2003·59 cites·18 claims
- 1478US6593244B1Process for etching conductors at high etch ratesAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·22 cites·13 claims
- 1578US6270634B1Method for plasma etching at a high etch rateAPPLIED MATERIALS INC·Filed 1999·Granted Aug 7, 2001·44 cites·24 claims
- 1675US6954561B1Methods for forming thermo-optic switches, routers and attenuatorsAPPLIED MATERIALS INC·Filed 2001·Granted Oct 11, 2005·15 cites·18 claims
- 1772US6303513B1Method for controlling a profile of a structure formed on a substrateAPPLIED MATERIALS INC·Filed 1999·Granted Oct 16, 2001·38 cites·22 claims
- 1871US6491835B1Metal mask etching of siliconAPPLIED MATERIALS INC·Filed 1999·Granted Dec 10, 2002·39 cites·13 claims
- 1970US8133817B2Shallow trench isolation etch processSASANO HIROKI·Filed 2008·Granted Mar 13, 2012·7 cites·23 claims
- 2068US8937021B2Methods for forming three dimensional NAND structures atop a substrateAPPLIED MATERIALS INC·Filed 2014·Granted Jan 20, 2015·2 cites·20 claims
- 2167US6897155B2Method for etching high-aspect-ratio featuresAPPLIED MATERIALS INC·Filed 2002·Granted May 24, 2005·11 cites·19 claims
- 2265US6471833B2High etch rate method for plasma etching silicon nitrideAPPLIED MATERIALS INC·Filed 2001·Granted Oct 29, 2002·9 cites·29 claims
- 2362US8231736B2Wet clean process for recovery of anodized chamber partsSUN JENNIFER Y·Filed 2007·Granted Jul 31, 2012·1 cites·16 claims
- 2457US8747684B2Multi-film stack etching with polymer passivation of an overlying etched layerSRINIVASAN SUNIL·Filed 2010·Granted Jun 10, 2014·1 cites·18 claims
- 2557US6642151B2Techniques for plasma etching silicon-germaniumAPPLIED MATERIALS INC·Filed 2002·Granted Nov 4, 2003·5 cites·32 claims
- 2654US8596336B2Substrate support temperature controlFOVELL RICHARD·Filed 2008·Granted Dec 3, 2013·1 cites·23 claims
- 2753US11437230B2Amorphous carbon multilayer coating with directional protectionAPPLIED MATERIALS INC·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 2852US6905616B2Method of releasing devices from a substrateAPPLIED MATERIALS INC·Filed 2003·Granted Jun 14, 2005·4 cites·9 claims
- 2949US8956500B2Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactorYUEN STEPHEN·Filed 2007·Granted Feb 17, 2015·0 cites·7 claims
- 3045US9236255B2Methods for forming three dimensional NAND structures atop a substrateAPPLIED MATERIALS INC·Filed 2014·Granted Jan 12, 2016·0 cites·20 claims
- 3144US9305748B2Method of matching two or more plasma reactorsAPPLIED MATERIALS INC·Filed 2013·Granted Apr 5, 2016·0 cites·13 claims
- 3243US2014212994A1Self aligned dual patterning technique enhancement with magnetic shieldingAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 3343US2008286978A1Etching and passivating for high aspect ratio featuresCHEN RONG·Filed 2007·Application pending·0 cites
- 3440US2005211664A1Method of forming optical waveguides in a semiconductor substrateAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3540US2001051439A1Self cleaning method of forming deep trenches in silicon substratesAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 3640US2006032833A1Encapsulation of post-etch halogenic residueAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 3738US9184021B2Predictive method of matching two plasma reactorsAPPLIED MATERIALS INC·Filed 2013·Granted Nov 10, 2015·0 cites·18 claims
- 3838US2012088371A1Methods for etching substrates using pulsed dc voltageRANJAN ALOK·Filed 2011·Application pending·0 cites
- 3937US2004077178A1Method for laterally etching a semiconductor structureAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4037US2003222296A1Method of forming a capacitor using a high K dielectric materialAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4137US2003052082A1Method of forming optical waveguides in a semiconductor substrateFiled 2001·Application pending·0 cites
- 4235US2003052088A1Method for increasing capacitance in stacked and trench capacitorsFiled 2001·Application pending·0 cites
- 4334US2003003748A1Method of eliminating notching when anisotropically etching small linewidth openings in silicon on insulatorFiled 2001·Application pending·0 cites
- 4434US2016056059A1Component for semiconductor process chamber having surface treatment to reduce particle emissionAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →