Inventor · disambiguated record
Andreas Knorr
Also filed as: KNORR ANDREAS · KNORR ANDREAS H
66 granted patents·13 pending applications·1,186 citations·filing 1993–2025
99Inventor score
Files withGLOBALFOUNDRIES INC31IBM10INFINEON TECHNOLOGIES AG9GLOBALFOUNDRIES US INC6BHS CORR MASCH & ANLAGENBAU4
Top patents by PatentIndex Score
79 records- 0199US9245885B1Methods of forming lateral and vertical FinFET devices and the resulting productGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 26, 2016·60 cites·17 claims
- 0298US9929157B1Tall single-fin fin-type field effect transistor structures and methodsGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 27, 2018·37 cites·13 claims
- 0398US6531377B2Method for high aspect ratio gap fill using sequential HDP-CVDINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 11, 2003·211 cites·23 claims
- 0497US10304833B1Method of forming complementary nano-sheet/wire transistor devices with same depth contactsGLOBALFOUNDRIES INC·Filed 2018·Granted May 28, 2019·19 cites·20 claims
- 0597US9780178B2Methods of forming a gate contact above an active region of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 3, 2017·17 cites·12 claims
- 0697US9691897B2Three-dimensional semiconductor transistor with gate contact in active regionGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 27, 2017·22 cites·5 claims
- 0797US9318342B2Methods of removing fins for finfet semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 19, 2016·16 cites·12 claims
- 0897US9147748B1Methods of forming replacement spacer structures on semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 29, 2015·36 cites·14 claims
- 0997US8048790B2Method for self-aligning a stop layer to a replacement gate for self-aligned contact integrationGLOBALFOUNDRIES INC·Filed 2009·Granted Nov 1, 2011·70 cites·12 claims
- 1096US10164041B1Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed therebyGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·14 cites·13 claims
- 1196US9614056B2Methods of forming a tri-gate FinFET deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 4, 2017·12 cites·21 claims
- 1296US9576857B1Method and structure for SRB elastic relaxationGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 21, 2017·14 cites·9 claims
- 1396US9147730B2Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting processGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 29, 2015·25 cites·20 claims
- 1494US8039326B2Methods for fabricating bulk FinFET devices having deep trench isolationGLOBALFOUNDRIES INC·Filed 2009·Granted Oct 18, 2011·31 cites·19 claims
- 1594US7626257B2Semiconductor devices and methods of manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 1, 2009·30 cites·45 claims
- 1692US7256148B2Method for treating a wafer edgeIBM·Filed 2005·Granted Aug 14, 2007·21 cites·13 claims
- 1790US10381459B2Transistors with H-shaped or U-shaped channels and method for forming the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 13, 2019·6 cites·11 claims
- 1889US10290549B2Integrated circuit structure, gate all-around integrated circuit structure and methods of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted May 14, 2019·6 cites·7 claims
- 1989US6294423B1Method for forming and filling isolation trenchesINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Sep 25, 2001·54 cites·22 claims
- 2088US6706634B1Control of separation between transfer gate and storage node in vertical DRAMINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 16, 2004·39 cites·14 claims
- 2187US8729609B2Integrated circuits including multi-gate transistors locally interconnected by continuous fin structure and methods for the fabrication thereofJOHNSON FRANK SCOTT·Filed 2010·Granted May 20, 2014·10 cites·10 claims
- 2285US10062617B2Method and structure for SRB elastic relaxationGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 28, 2018·3 cites·4 claims
- 2385US7273638B2High density plasma oxidationINFINEON TECHNOLOGIES CORP·Filed 2003·Granted Sep 25, 2007·41 cites·19 claims
- 2485US6566228B1Trench isolation processes using polysilicon-assisted fillIBM·Filed 2002·Granted May 20, 2003·40 cites·20 claims
- 2584US8779529B2Self-aligned silicidation for replacement gate processSEN INDRADEEP·Filed 2012·Granted Jul 15, 2014·9 cites·20 claims
- 2684US6437401B1Structure and method for improved isolation in trench storage cellsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 20, 2002·38 cites·24 claims
- 2783US9443976B1Integrated circuit product comprising lateral and vertical FinFet devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 13, 2016·3 cites·20 claims
- 2883US8533651B1Providing conversion of a planar design to a FinFET designTAN SOON YOENG·Filed 2012·Granted Sep 10, 2013·13 cites·20 claims
- 2981US6821865B2Deep isolation trenchesINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 23, 2004·33 cites·36 claims
- 3080US2025325416A1Absorbent article with improved performancePROCTER & GAMBLE·Filed 2025·Application pending·0 cites
- 3179US9496354B2Semiconductor devices with dummy gate structures partially on isolation regionsGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 15, 2016·2 cites·18 claims
- 3278US12159926B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2023·Granted Dec 3, 2024·0 cites·19 claims
- 3378US10424657B2Tri-gate FinFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 24, 2019·2 cites·18 claims
- 3477US9000534B2Method for forming and integrating metal gate transistors having self-aligned contacts and related structureKNORR ANDREAS H·Filed 2009·Granted Apr 7, 2015·9 cites·19 claims
- 3577US6890833B2Trench isolation employing a doped oxide trench fillIBM·Filed 2003·Granted May 10, 2005·25 cites·15 claims
- 3676US10644157B2Fin-type field effect transistors with uniform channel lengths and below-channel isolation on bulk semiconductor substrates and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·2 cites·16 claims
- 3776US5632850AMachine for the manufacture of a web of at least single-face corrugated boardBHS CORR MASCH & ANLAGENBAU·Filed 1995·Granted May 27, 1997·40 cites·20 claims
- 3875US9412695B1Interconnect structures and methods of fabricationGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 9, 2016·2 cites·20 claims
- 3975US9257325B2Semiconductor structures and methods for forming isolation between Fin structures of FinFET devicesKNORR ANDREAS·Filed 2009·Granted Feb 9, 2016·8 cites·13 claims
- 4072US10411010B2Tall single-fin FIN-type field effect transistor structures and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 10, 2019·1 cites·20 claims
- 4172US6794242B1Extendible process for improved top oxide layer for DRAM array and the gate interconnects while providing self-aligned gate contactsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 21, 2004·12 cites·14 claims
- 4271US5906305AApparatus for the corrective positioning of a travelling web at right angles to the direction of travelBHS CORR MASCH & ANLAGENBAU·Filed 1997·Granted May 25, 1999·20 cites·15 claims
- 4369US11810969B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 7, 2023·0 cites·19 claims
- 4469US6914015B2HDP process for high aspect ratio gap fillingIBM·Filed 2003·Granted Jul 5, 2005·14 cites·23 claims
- 4568US7125782B2Air gaps between conductive lines for reduced RC delay of integrated circuitsIBM·Filed 2004·Granted Oct 24, 2006·15 cites·37 claims
- 4668US6667504B1Self-aligned buried strap process using doped HDP oxideIBM·Filed 2003·Granted Dec 23, 2003·11 cites·11 claims
- 4767US12408396B1Field-effect transistors with heterogenous doped regions in the substrate of a silicon-on-insulator substrateGLOBALFOUNDRIES US INC·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 4866US8361870B2Self-aligned silicidation for replacement gate processGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 29, 2013·2 cites·15 claims
- 4966US6933206B2Trench isolation employing a high aspect ratio trenchINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 23, 2005·12 cites·36 claims
- 5065US7157373B2Sidewall sealing of porous dielectric materialsIBM·Filed 2003·Granted Jan 2, 2007·13 cites·18 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →