Inventor · disambiguated record
Andrew Metz
Also filed as: METZ ANDREW · METZ ANDREW W
37 granted patents·11 pending applications·90 citations·filing 2007–2025
95Inventor score
Top patents by PatentIndex Score
48 records- 0195US11195723B1Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etchTOKYO ELECTRON LTD·Filed 2020·Granted Dec 7, 2021·5 cites·20 claims
- 0295US10438797B2Method of quasi atomic layer etchingTOKYO ELECTRON LTD·Filed 2017·Granted Oct 8, 2019·40 cites·17 claims
- 0391US9257529B2Method of forming self-aligned contacts using a replacement metal gate process in a semiconductor deviceTOKYO ELECTRON LTD·Filed 2014·Granted Feb 9, 2016·14 cites·18 claims
- 0489US11482454B2Methods for forming self-aligned contacts using spin-on silicon carbideTOKYO ELECTRON LTD·Filed 2021·Granted Oct 25, 2022·2 cites·20 claims
- 0587US9607834B2Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)TOKYO ELECTRON LTD·Filed 2016·Granted Mar 28, 2017·5 cites·20 claims
- 0686US9818610B2Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)TOKYO ELECTRON LTD·Filed 2017·Granted Nov 14, 2017·4 cites·7 claims
- 0782US11978631B2Forming contact holes with controlled local critical dimension uniformityTOKYO ELECTRON LTD·Filed 2020·Granted May 7, 2024·1 cites·22 claims
- 0882US11121027B2High aspect ratio via etch using atomic layer deposition protection layerTOKYO ELECTRON LTD·Filed 2018·Granted Sep 14, 2021·4 cites·19 claims
- 0972US8138364B2Transparent conducting oxide thin films and related devicesMARKS TOBIN J·Filed 2007·Granted Mar 20, 2012·3 cites·1 claims
- 1072US2025279280A1Plasma etching tools and systemsTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 1171US8501630B2Selective etch process for silicon nitrideMETZ ANDREW W·Filed 2010·Granted Aug 6, 2013·4 cites·9 claims
- 1270US10950444B2Metal hard mask layers for processing of microelectronic workpiecesTOKYO ELECTRON LTD·Filed 2019·Granted Mar 16, 2021·1 cites·21 claims
- 1369US12334356B2Plasma etching tools and systemsTOKYO ELECTRON LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 1469US10332744B2Method for patterning a substrate using a layer with multiple materialsTOKYO ELECTRON LTD·Filed 2017·Granted Jun 25, 2019·1 cites·20 claims
- 1569US8808562B2Dry metal etching methodOHSAWA YUSUKE·Filed 2011·Granted Aug 19, 2014·3 cites·15 claims
- 1669US8382997B2Method for high aspect ratio patterning in a spin-on layerTOKYO ELECTRON LTD·Filed 2010·Granted Feb 26, 2013·2 cites·20 claims
- 1768US12080599B2Methods for forming self-aligned contacts using spin-on silicon carbideTOKYO ELECTRON LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 1868US11651967B2Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etchTOKYO ELECTRON LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 1964US9396958B2Self-aligned patterning using directed self-assembly of block copolymersTOKYO ELECTRON LTD·Filed 2015·Granted Jul 19, 2016·1 cites·20 claims
- 2062US12354842B2In-situ focus ring coatingTOKYO ELECTRON LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2160US12288692B2Method of forming a FET structure by selective deposition of film on source/drain contactTOKYO ELECTRON LTD·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 2260US12266533B2Sacrificial capping layer for contact etchTOKYO ELECTRON LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 2359US12341009B2Variable hardness amorphous carbon maskTOKYO ELECTRON LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 2458US2025305149A1Etching bi-metal oxides with alkaline earth metalsTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 2557US12040176B2Technologies for high aspect ratio carbon etching with inserted charge dissipation layerTOKYO ELECTRON LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 2655US11538692B2Cyclic plasma etching of carbon-containing materialsTOKYO ELECTRON LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 2755US11495436B2Systems and methods to control critical dimension (CD) shrink ratio through radio frequency (RF) pulsingTOKYO ELECTRON LTD·Filed 2021·Granted Nov 8, 2022·0 cites·20 claims
- 2854US2025271374A1In-situ variable temperature bow metrologyTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 2954US2024249927A1Plasma Etching with Metal SputteringTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 3053US12400872B2Sacrificial capping layer for gate protectionTOKYO ELECTRON LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 3152US12211911B2Recessed contact structures and methodsTOKYO ELECTRON LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
- 3251US11227774B2Methods and systems for etching silicon cyanide (SiCN) with multi-color selectivityTOKYO ELECTRON LTD·Filed 2020·Granted Jan 18, 2022·0 cites·18 claims
- 3351US2024096640A1High Aspect Ratio Contact (HARC) EtchTOKYO ELECTION LTD·Filed 2022·Application pending·0 cites
- 3450US11961735B2Cyclic plasma processingTOKYO ELECTRON LTD·Filed 2021·Granted Apr 16, 2024·0 cites·20 claims
- 3550US11127594B2Manufacturing methods for mandrel pull from spacers for multi-color patterningTOKYO ELECTRON LTD·Filed 2018·Granted Sep 21, 2021·0 cites·27 claims
- 3650US10937659B2Method of anisotropically etching adjacent lines with multi-color selectivityTOKYO ELECTRON LTD·Filed 2019·Granted Mar 2, 2021·0 cites·24 claims
- 3750US2023343598A1Method For Improving Etch Rate And Critical Dimension Uniformity When Etching High Aspect Ratio Features Within A Hard Mask LayerTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 3850US2024347346A1Semiconductor devices and methods of manufacturing the sameTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 3949US11532517B2Localized etch stop layerTOKYO ELECTRON LTD·Filed 2020·Granted Dec 20, 2022·0 cites·16 claims
- 4049US2022199410A1Conformal amorphous carbon layer etch with side-wall passivationTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 4148US12266534B2Forming a semiconductor device using a protective layerTOKYO ELECTRON LTD·Filed 2021·Granted Apr 1, 2025·0 cites·20 claims
- 4248US12191202B2Contact openings in semiconductor devicesTOKYO ELECTRON LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 4348US10950460B2Method utilizing using post etch pattern encapsulationTOKYO ELECTRON LTD·Filed 2019·Granted Mar 16, 2021·0 cites·21 claims
- 4448US9368368B2Method for increasing oxide etch selectivityTOKYO ELECTRON LTD·Filed 2014·Granted Jun 14, 2016·0 cites·20 claims
- 4548US2010216310A1Process for etching anti-reflective coating to improve roughness, selectivity and CD shrinkTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 4648US2023094212A1Plasma etch process for fabricating high aspect ratio (har) featuresTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 4746US10854453B2Method for reducing reactive ion etch lag in low K dielectric etchingTOKYO ELECTRON LTD·Filed 2018·Granted Dec 1, 2020·0 cites·12 claims
- 4845US2022246747A1Contact Etch Stop Layer with Improved Etch Stop CapabilityTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →