Inventor · disambiguated record
Antonio Luis Pacheco Rotondaro
Also filed as: ROTONDARO ANTONIO · ROTONDARO ANTONIO L · ROTONDARO ANTONIO L P · ROTONDARO ANTONIO LUIS PACHECO
56 granted patents·16 pending applications·2,042 citations·filing 1997–2024
99Inventor score
Files withTEXAS INSTRUMENTS INC44TOKYO ELECTRON LTD17VISOKAY MARK R2IMEC INTER UNI MICRO ELECTR1KOHLI PUNEET1
Top patents by PatentIndex Score
72 records- 0199US6544906B2Annealing of high-k dielectric materialsTEXAS INSTRUMENTS INC·Filed 2001·Granted Apr 8, 2003·602 cites·24 claims
- 0297US6852645B2High temperature interface layer growth for high-k gate dielectricTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 8, 2005·130 cites·28 claims
- 0397US6835639B2Multiple work function gatesTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 28, 2004·130 cites·5 claims
- 0497US6696332B2Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processingTEXAS INSTRUMENTS INC·Filed 2002·Granted Feb 24, 2004·145 cites·12 claims
- 0595US6821873B2Anneal sequence for high-κ film property optimizationTEXAS INSTRUMENTS INC·Filed 2002·Granted Nov 23, 2004·106 cites·22 claims
- 0695US6750126B1Methods for sputter deposition of high-k dielectric filmsTEXAS INSTRUMENTS INC·Filed 2003·Granted Jun 15, 2004·83 cites·52 claims
- 0795US5948702ASelective removal of TixNyTEXAS INSTRUMENTS INC·Filed 1997·Granted Sep 7, 1999·207 cites·13 claims
- 0894US7135361B2Method for fabricating transistor gate structures and gate dielectrics thereofTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 14, 2006·62 cites·40 claims
- 0994US6770521B2Method of making multiple work function gates by implanting metals with metallic alloying additivesTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 3, 2004·63 cites·14 claims
- 1092US6809370B1High-k gate dielectric with uniform nitrogen profile and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 26, 2004·81 cites·15 claims
- 1192US6656852B2Method for the selective removal of high-k dielectricsTEXAS INSTRUMENTS INC·Filed 2001·Granted Dec 2, 2003·62 cites·23 claims
- 1290US6979623B2Method for fabricating split gate transistor device having high-k dielectricsTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 27, 2005·52 cites·17 claims
- 1387US7528072B2Crystallographic preferential etch to define a recessed-region for epitaxial growthTEXAS INSTRUMENTS INC·Filed 2006·Granted May 5, 2009·9 cites·11 claims
- 1486US11738363B2Bath systems and methods thereofTOKYO ELECTRON LTD·Filed 2021·Granted Aug 29, 2023·1 cites·19 claims
- 1581US7601577B2Work function control of metalsTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 13, 2009·7 cites·10 claims
- 1680US12226796B2Bath systems and methods thereofTOKYO ELECTRON LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1780US6642094B2Complementary transistors having respective gates formed from a metal and a corresponding metal-silicideTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 4, 2003·26 cites·13 claims
- 1879US6787425B1Methods for fabricating transistor gate structuresTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 7, 2004·27 cites·15 claims
- 1979US6638877B2Ultra-thin SiO2using N2O as the oxidantTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 28, 2003·22 cites·13 claims
- 2079US2025196175A1Bath systems and methods thereofTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 2178US7691714B2Semiconductor device having a dislocation loop located within a boundary created by source/drain regions and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 6, 2010·6 cites·14 claims
- 2278US7514309B2Methods to selectively protect NMOS regions, PMOS regions, and gate layers during EPI processTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 7, 2009·9 cites·9 claims
- 2377US7088123B1System and method for extraction of C-V characteristics of ultra-thin oxidesTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 8, 2006·10 cites·20 claims
- 2477US6342446B1Plasma process for organic residue removal from copperTEXAS INSTRUMENTS INC·Filed 1999·Granted Jan 29, 2002·50 cites·4 claims
- 2574US6727185B1Dry process for post oxide etch residue removalTEXAS INSTRUMENTS INC·Filed 2000·Granted Apr 27, 2004·18 cites·18 claims
- 2672US12002687B2System and methods for wafer dryingTOKYO ELECTRON LTD·Filed 2022·Granted Jun 4, 2024·0 cites·16 claims
- 2772US7226826B2Semiconductor device having multiple work functions and method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 5, 2007·14 cites·12 claims
- 2871US12406862B2Vacuum processing apparatus and oxidizing gas removal methodTOKYO ELECTRON LTD·Filed 2023·Granted Sep 2, 2025·0 cites·3 claims
- 2971US6261934B1Dry etch process for small-geometry metal gates over thin gate dielectricTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 17, 2001·39 cites·12 claims
- 3070US10886290B2Etching of silicon nitride and silica deposition control in 3D NAND structuresTOKYO ELECTRON LTD·Filed 2019·Granted Jan 5, 2021·1 cites·20 claims
- 3170US10515820B2Process and apparatus for processing a nitride structure without silica depositionTOKYO ELECTRON LTD·Filed 2017·Granted Dec 24, 2019·1 cites·20 claims
- 3270US6780719B2Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixturesTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 24, 2004·13 cites·12 claims
- 3369US7233035B2Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compoundTEXAS INSTRUMENTS INC·Filed 2006·Granted Jun 19, 2007·3 cites·4 claims
- 3465US7601578B2Defect control in gate dielectricsTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 13, 2009·1 cites·16 claims
- 3565US6794252B2Method and system for forming dual work function gate electrodes in a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 21, 2004·10 cites·13 claims
- 3664US7026218B2Use of indium to define work function of p-type doped polysiliconTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 11, 2006·9 cites·16 claims
- 3764US2025368898A1Methods for controlling the phase of self-assembled ionic liquid crystal (ilc) structuresTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 3863US8384138B2Defect prevention on SRAM cells that incorporate selective epitaxial regionsTEXAS INSTRUMENTS INC·Filed 2006·Granted Feb 26, 2013·2 cites·7 claims
- 3963US7422969B2Multi-step process for patterning a metal gate electrodeTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 9, 2008·1 cites·8 claims
- 4062US11515178B2System and methods for wafer dryingTOKYO ELECTRON LTD·Filed 2020·Granted Nov 29, 2022·0 cites·18 claims
- 4162US8703555B2Defect prevention on SRAM cells that incorporate selective epitaxial regionsTEXAS INSTRUMENTS INC·Filed 2013·Granted Apr 22, 2014·1 cites·9 claims
- 4261US2022403509A1Vacuum processing apparatus and oxidizing gas removal methodTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 4359US7323403B2Multi-step process for patterning a metal gate electrodeTEXAS INSTR INCROPORATED·Filed 2004·Granted Jan 29, 2008·6 cites·8 claims
- 4459US7109077B2Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compoundTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 19, 2006·7 cites·13 claims
- 4557US7351626B2Method for controlling defects in gate dielectricsTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 1, 2008·4 cites·9 claims
- 4657US7169659B2Method to selectively recess ETCH regions on a wafer surface using capoly as a maskTEXAS INSTRUMENTS INC·Filed 2004·Granted Jan 30, 2007·7 cites·21 claims
- 4755US10916440B2Process and apparatus for processing a nitride structure without silica depositionTOKYO ELECTRON LTD·Filed 2019·Granted Feb 9, 2021·0 cites·13 claims
- 4855US7172936B2Method to selectively strain NMOS devices using a cap poly layerTEXAS INSTRUMENTS INC·Filed 2004·Granted Feb 6, 2007·6 cites·20 claims
- 4953US2007072363A1Method for fabricating transistor gate structures and gate dielectrics thereofVISOKAY MARK R·Filed 2006·Application pending·0 cites
- 5053US2007072364A1Method for fabricating transistor gate structures and gate dielectrics thereofVISOKAY MARK R·Filed 2006·Application pending·0 cites
Showing the top 50 of 72 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →