Inventor · disambiguated record
Antonio Rotondaro
Also filed as: ROTONDARO ANTONIO L · ROTONDARO ANTONIO L P
18 granted patents·4 pending applications·339 citations·filing 1999–2019
95Inventor score
Files withTEXAS INSTRUMENTS INC14ROTONDARO ANTONIO L P2TOKYO ELECTRON LTD2CHEN YUANNING1LI ZHENGWEN1
Top patents by PatentIndex Score
22 records- 0195US7018902B2Gate dielectric and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 28, 2006·78 cites·8 claims
- 0292US7105891B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 12, 2006·69 cites·3 claims
- 0387US10325779B2Colloidal silica growth inhibitor and associated method and systemTOKYO ELECTRON LTD·Filed 2017·Granted Jun 18, 2019·4 cites·19 claims
- 0487US8021990B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2009·Granted Sep 20, 2011·11 cites·6 claims
- 0587US7045431B2Method for integrating high-k dielectrics in transistor devicesTEXAS INSTRUMENTS INC·Filed 2003·Granted May 16, 2006·42 cites·19 claims
- 0686US7423326B2Integrated circuits with composite gate dielectricTEXAS INSTRUMENTS INC·Filed 2005·Granted Sep 9, 2008·11 cites·2 claims
- 0786US7291890B2Gate dielectric and methodTEXAS INSTRUMENTS INC·Filed 2006·Granted Nov 6, 2007·9 cites·1 claims
- 0886US6919251B2Gate dielectric and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Jul 19, 2005·32 cites·10 claims
- 0979US6797599B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 28, 2004·20 cites·8 claims
- 1074US6723658B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Apr 20, 2004·15 cites·8 claims
- 1172US8410559B2Selectively self-assembling oxygen diffusion barrierLI ZHENGWEN·Filed 2009·Granted Apr 2, 2013·3 cites·25 claims
- 1270US6783997B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 31, 2004·12 cites·4 claims
- 1365US7535066B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2003·Granted May 19, 2009·9 cites·3 claims
- 1458US10763120B2Colloidal silica growth inhibitor and associated method and systemTOKYO ELECTRON LTD·Filed 2019·Granted Sep 1, 2020·0 cites·12 claims
- 1554US7449385B2Gate dielectric and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Nov 11, 2008·4 cites·9 claims
- 1653US6214736B1Silicon processing methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 10, 2001·20 cites·3 claims
- 1742US9269783B2Body contacted transistor with reduced parasitic capacitanceROTONDARO ANTONIO L P·Filed 2012·Granted Feb 23, 2016·0 cites·18 claims
- 1840US8441071B2Body contacted transistor with reduced parasitic capacitanceROTONDARO ANTONIO L P·Filed 2010·Granted May 14, 2013·0 cites·20 claims
- 1940US2005263834A1Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technologyCHEN YUANNING·Filed 2005·Application pending·0 cites
- 2039US2005130438A1Method of fabricating a dielectric layer for a semiconductor structureTEXAS INSTRUMENTS INC·Filed 2003·Application pending·0 cites
- 2139US2005023623A1Gate structure and methodFiled 2004·Application pending·0 cites
- 2237US2003109146A1Oxynitride device and method using non-stoichiometric silicon oxideFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →