Inventor · disambiguated record
Andreas Scholze
Also filed as: SCHOLZE ANDREAS
12 granted patents·2 pending applications·25 citations·filing 2010–2023
86Inventor score
Top patents by PatentIndex Score
14 records- 0193US9390976B2Method of forming epitaxial buffer layer for finFET source and drain junction leakage reductionIBM·Filed 2015·Granted Jul 12, 2016·8 cites·12 claims
- 0290US9786765B2FINFET having notched fins and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 10, 2017·7 cites·20 claims
- 0388US9391065B1Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diodeIBM·Filed 2015·Granted Jul 12, 2016·5 cites·7 claims
- 0476US9536882B2Field-isolated bulk FinFETGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 3, 2017·3 cites·13 claims
- 0569US9704852B2Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diodeGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 11, 2017·1 cites·14 claims
- 0667US9601513B1Subsurface wires of integrated chip and methods of formingGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 21, 2017·1 cites·17 claims
- 0762US11101367B2Contact-first field-effect transistorsIBM·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 0860US10249714B2Method of forming epitaxial buffer layer for finFET source and drain junction leakage reductionIBM·Filed 2017·Granted Apr 2, 2019·0 cites·16 claims
- 0958US9793272B2Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakageIBM·Filed 2016·Granted Oct 17, 2017·0 cites·20 claims
- 1057US9786661B2Method of forming epitaxial buffer layer for finFET source and drain junction leakage reductionIBM·Filed 2016·Granted Oct 10, 2017·0 cites·20 claims
- 1156US10297589B2Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diodeGLOBALFOUNDRIES INC·Filed 2017·Granted May 21, 2019·0 cites·15 claims
- 1256US2023418319A1Semiconductor transistors having minimum gate-to-source voltage clamp circuitsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 1346US2016372600A1Contact-first field-effect transistorsIBM·Filed 2015·Application pending·0 cites
- 1437US8647935B2Buried oxidation for enhanced mobilityANDERSON BRENT A·Filed 2010·Granted Feb 11, 2014·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →