Inventor · disambiguated record
Anton V. Tokranov
Also filed as: TOKRANOV ANTON · TOKRANOV ANTON V · TOKRANOV ANTON VADIMOVICH
4 granted patents·5 pending applications·4 citations·filing 2019–2023
61Inventor score
Top patents by PatentIndex Score
9 records- 0177US11037937B2SRAM bit cells formed with dummy structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 15, 2021·2 cites·17 claims
- 0276US11276651B2IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structureGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 15, 2022·1 cites·17 claims
- 0370US11205648B2IC structure with single active region having different doping profile than set of active regionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 21, 2021·1 cites·17 claims
- 0457US2024047555A1Semiconductor structure including field effect transistor with scaled gate length and methodGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
- 0555US2025194180A1Nanosheet FET with Controlled Overlay MarkIBM·Filed 2023·Application pending·0 cites
- 0654US2024429237A1Semiconductor device including diffusion break structure and method of forming semiconductor deviceGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 0748US2025040237A1Integrated circuit with finfet with shorter and narrower fin under gate onlyGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 0847US12433014B2Structure having different gate dielectric widths in different regions of substrateGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 30, 2025·0 cites·14 claims
- 0942US2021091222A1Fin structures of finfet devicesGLOBALFOUNDRIES US INC·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →