Inventor · disambiguated record
Andreas Wohlfart
Also filed as: WOHLFART ANDREAS
5 granted patents·4 pending applications·47 citations·filing 2009–2024
76Inventor score
Top patents by PatentIndex Score
9 records- 0194US8865324B2Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distributionSTRAUBINGER THOMAS·Filed 2010·Granted Oct 21, 2014·34 cites·7 claims
- 0291US8747982B2Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane courseSTRAUBINGER THOMAS·Filed 2011·Granted Jun 10, 2014·10 cites·27 claims
- 0382US9590046B2Monocrystalline SiC substrate with a non-homogeneous lattice plane courseSICRYSTAL AG·Filed 2014·Granted Mar 7, 2017·2 cites·7 claims
- 0477US8758510B2Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane courseSTRAUBINGER THOMAS·Filed 2011·Granted Jun 24, 2014·1 cites·12 claims
- 0560US2025105758A1Three-level power semiconductor module and arrangement therewithSEMIKRON DANFOSS ELEKTRONIK GMBH & CO KG·Filed 2024·Application pending·0 cites
- 0656US2025105757A1Three-level power semiconductor module and arrangement therewithSEMIKRON DANFOSS ELEKTRONIK GMBH & CO KG·Filed 2024·Application pending·0 cites
- 0754US9376764B2Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growingSICRYSTAL AG·Filed 2013·Granted Jun 28, 2016·0 cites·17 claims
- 0848US2010159182A1Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC SubstrateSICRYSTAL AG·Filed 2009·Application pending·0 cites
- 0940US2011086213A1Method of producing a silicon carbide bulk single crystal with thermal treatment, and low-impedance monocrystalline silicon carbide substrateSICRYSTAL AG·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →