Inventor · disambiguated record
Anto Yasaka
Also filed as: YASAKA ANTO
18 granted patents·2 pending applications·58 citations·filing 1988–2018
91Inventor score
Files withHITACHI HIGH TECH SCIENCE CORP13SEIKO INSTR INC2KOYAMA YOSHIHIRO1OGAWA TAKASHI1SII NANOTECHNOLOGY INC1
Top patents by PatentIndex Score
20 records- 0185US8460842B2Defect repair apparatus and method for EUV mask using a hydrogen ion beamOGAWA TAKASHI·Filed 2011·Granted Jun 11, 2013·7 cites·23 claims
- 0282US8764994B2Method for fabricating emitterHITACHI HIGH TECH SCIENCE CORP·Filed 2013·Granted Jul 1, 2014·4 cites·4 claims
- 0381US8963100B2Nitrogen ions from a gas field ion source held at a pressure of 1.0 x 10^(-6) pa to 1.0 x 10^(-2) paYASAKA ANTO·Filed 2012·Granted Feb 24, 2015·6 cites·18 claims
- 0480US9773634B2Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatusHITACHI HIGH-TECH SCIENCE CORP·Filed 2017·Granted Sep 26, 2017·2 cites·11 claims
- 0575US9129771B2Emitter structure, gas ion source and focused ion beam systemHITACHI HIGH TECH SCIENCE CORP·Filed 2014·Granted Sep 8, 2015·2 cites·19 claims
- 0674US9378858B2Repair apparatusHITACHI HIGH TECH SCIENCE CORP·Filed 2014·Granted Jun 28, 2016·2 cites·5 claims
- 0772US7172839B2Photomask correction method using composite charged particle beam, and device used in the correction methodSII NANOTECHNOLOGY INC·Filed 2003·Granted Feb 6, 2007·10 cites·6 claims
- 0868US9336979B2Focused ion beam apparatus with precious metal emitter surfaceHITACHI HIGH TECH SCIENCE CORP·Filed 2015·Granted May 10, 2016·1 cites·12 claims
- 0964US4902530AMethod of correcting a pattern filmSEIKO INSTR INC·Filed 1988·Granted Feb 20, 1990·16 cites·5 claims
- 1059US9583299B2Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatusHITACHI HIGH-TECH SCIENCE CORP·Filed 2014·Granted Feb 28, 2017·0 cites·1 claims
- 1159US8999178B2Method for fabricating emitterHITACHI HIGH TECH SCIENCE CORP·Filed 2014·Granted Apr 7, 2015·0 cites·4 claims
- 1256US10276343B2Method for acquiring image and ion beam apparatusHITACHI HIGH TECH SCIENCE CORP·Filed 2018·Granted Apr 30, 2019·0 cites·6 claims
- 1355US9640361B2Emitter structure, gas ion source and focused ion beam systemHITACHI HIGH-TECH SCIENCE CORP·Filed 2015·Granted May 2, 2017·0 cites·8 claims
- 1455US9257273B2Charged particle beam apparatus, thin film forming method, defect correction method and device forming methodKOYAMA YOSHIHIRO·Filed 2011·Granted Feb 9, 2016·1 cites·15 claims
- 1552US10529531B2Ion source and electron source having single-atom termination structure, tip having single-atom termination structure, gas field ion source, focused ion beam apparatus, electron source, electron microscope, mask repair apparatus, and method of manufacturing tip having single-atom termination structureHITACHI HIGH TECH SCIENCE CORP·Filed 2018·Granted Jan 7, 2020·0 cites·10 claims
- 1652US10014157B2Method for acquiring image and ion beam apparatusHITACHI HIGH TECH SCIENCE CORP·Filed 2016·Granted Jul 3, 2018·0 cites·4 claims
- 1752US9793085B2Focused ion beam apparatusHITACHI HIGH-TECH SCIENCE CORP·Filed 2016·Granted Oct 17, 2017·0 cites·11 claims
- 1852US2016322123A1Repair ApparatusHITACHI HIGH-TECH SCIENCE CORP·Filed 2016·Application pending·0 cites
- 1951US2007267579A1Photomask correction method using composite charged particle beam, and device used in the correction methodSUGIYAMA YASUHIKO·Filed 2006·Application pending·0 cites
- 2044US5153440AMethod of stabilizing operation for a liquid metal ion sourceSEIKO INSTR INC·Filed 1991·Granted Oct 6, 1992·7 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →