Inventor · disambiguated record
Artur Antonyan
Also filed as: ANTONYAN ARTUR
27 granted patents·2 pending applications·101 citations·filing 2014–2024
95Inventor score
Technology areasG11C
Top patents by PatentIndex Score
29 records- 0197US10453532B1Resistive memory device including reference cell and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 22, 2019·27 cites·20 claims
- 0288US10008249B2Semiconductor memory device with increased operating speedSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 26, 2018·9 cites·20 claims
- 0388US9711203B2Memory device including boosted voltage generatorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 18, 2017·9 cites·20 claims
- 0488US9672895B2Sense amplifier, semiconductor memory device using thereof and read method thereofANTONYAN ARTUR·Filed 2016·Granted Jun 6, 2017·8 cites·15 claims
- 0587US11488641B2Memory device including variable reference resistor and method of calibrating the variable reference resistorSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 0682US9349428B2Sense amplifier, nonvolatile memory device including the sense amplifier and sensing method of the sense amplifierANTONYAN ARTUR·Filed 2014·Granted May 24, 2016·8 cites·17 claims
- 0782US9343138B2Sense amplifier, semiconductor memory device using thereof and read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 17, 2016·6 cites·11 claims
- 0880US10622066B2Resistive memory device including reference cell and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 14, 2020·4 cites·10 claims
- 0980US8929127B2Current generator for nonvolatile memory device and write and/or read currents calibrating method using the sameANTONYAN ARTUR·Filed 2014·Granted Jan 6, 2015·7 cites·18 claims
- 1078US10910030B2Memory device for reducing leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·4 cites·20 claims
- 1174US10854289B2Resistive memory device providing reference calibration, and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 1, 2020·3 cites·18 claims
- 1274US10762932B2Memory device and operating method of memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 1, 2020·3 cites·20 claims
- 1370US10535392B2Integrated circuit memory device with write driver and method of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 14, 2020·2 cites·19 claims
- 1469US10777255B2Control signal generator for sense amplifier and memory device including the control signal generatorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 15, 2020·2 cites·20 claims
- 1569US10360948B2Memory device and operating method of memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 23, 2019·2 cites·20 claims
- 1669US9378797B2Provide a memory device capable of increasing performance by performing a write operation using stable multi voltages that are applied to a word lineANTONYAN ARTUR·Filed 2015·Granted Jun 28, 2016·3 cites·20 claims
- 1763USRE50133EResistive memory device including reference cell to compensate for a leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 1861US10964387B2Resistive memory device including reference cell and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 30, 2021·0 cites·9 claims
- 1961US10510393B2Resistive memory device including reference cell and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 2055US12237005B2Nonvolatile memory devices that support enhanced power saving during standby modesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 2153US11217305B2Nonvolatile memory device and operating methodSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 4, 2022·0 cites·20 claims
- 2253US9892773B2Unit array of a memory device, memory device, and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 13, 2018·1 cites·19 claims
- 2350US10896709B2Integrated circuit memory device and method of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 19, 2021·0 cites·9 claims
- 2450US10896699B1Memory devices including switch circuit that operates regardless of power supply voltageSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 19, 2021·0 cites·20 claims
- 2549US11514965B2Resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 29, 2022·0 cites·18 claims
- 2647US11342036B2Memory device for write operation including verification and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 24, 2022·0 cites·18 claims
- 2747US2025322863A1Voltage calibration for write operationSYNOPSYS INC·Filed 2024·Application pending·0 cites
- 2843US11017829B2Magnetic memory device including voltage generator connected to both word line driver and write driverSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 25, 2021·0 cites·18 claims
- 2936US2014340959A1Nonvolatile memory device and data processing method thereofANTONYAN ARTUR·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →