Inventor · disambiguated record
Arvind Halliyal
Also filed as: HALLIYAL ARVIND
82 granted patents·1 pending application·3,807 citations·filing 1992–2011
99Inventor score
Top patents by PatentIndex Score
83 records- 0199US6674138B1Use of high-k dielectric materials in modified ONO structure for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 6, 2004·490 cites·16 claims
- 0298US6803272B1Use of high-K dielectric material in modified ONO structure for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 12, 2004·149 cites·20 claims
- 0398US6642573B1Use of high-K dielectric material in modified ONO structure for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 4, 2003·253 cites·22 claims
- 0498US6586349B1Integrated process for fabrication of graded composite dielectric material layers for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 1, 2003·220 cites·19 claims
- 0597US7115469B1Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) processSPANSION LLC·Filed 2004·Granted Oct 3, 2006·135 cites·20 claims
- 0697US6740605B1Process for reducing hydrogen contamination in dielectric materials in memory devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted May 25, 2004·140 cites·20 claims
- 0797US6645882B1Preparation of composite high-K/standard-K dielectrics for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 11, 2003·122 cites·20 claims
- 0897US6451641B1Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric materialADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 17, 2002·148 cites·20 claims
- 0996US6750066B1Precision high-K intergate dielectric layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 15, 2004·125 cites·9 claims
- 1094US6670241B1Semiconductor memory with deuterated materialsADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 30, 2003·79 cites·8 claims
- 1193US6563183B1Gate array with multiple dielectric properties and method for forming sameADVANCED MICRO DEVICES INC·Filed 2002·Granted May 13, 2003·113 cites·4 claims
- 1292US7033957B1ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devicesFASL LLC·Filed 2003·Granted Apr 25, 2006·62 cites·21 claims
- 1392US6949433B1Method of formation of semiconductor resistant to hot carrier injection stressFASL LLC·Filed 2003·Granted Sep 27, 2005·103 cites·18 claims
- 1491US6803275B1ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devicesFASL LLC·Filed 2002·Granted Oct 12, 2004·46 cites·19 claims
- 1591US6642066B1Integrated process for depositing layer of high-K dielectric with in-situ control of K value and thickness of high-K dielectric layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 4, 2003·98 cites·21 claims
- 1691US6593748B1Process integration of electrical thickness measurement of gate oxide and tunnel oxides by corona discharge techniqueADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 15, 2003·44 cites·49 claims
- 1790US6949481B1Process for fabrication of spacer layer with reduced hydrogen content in semiconductor deviceFASL LLC·Filed 2003·Granted Sep 27, 2005·50 cites·20 claims
- 1890US6617215B1Memory wordline hard maskADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 9, 2003·47 cites·20 claims
- 1990US6406960B1Process for fabricating an ONO structure having a silicon-rich silicon nitride layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 18, 2002·83 cites·6 claims
- 2090US6265268B1High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 24, 2001·94 cites·21 claims
- 2189US8049334B1Buried silicide local interconnect with sidewall spacers and method for making the sameADVANCED MICRO DEVICES INC·Filed 2010·Granted Nov 1, 2011·8 cites·20 claims
- 2289US6958511B1Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogenFASL LLC·Filed 2003·Granted Oct 25, 2005·52 cites·19 claims
- 2389US6752899B1Acoustic microbalance for in-situ deposition process monitoring and controlADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 22, 2004·43 cites·19 claims
- 2489US6693321B1Replacing layers of an intergate dielectric layer with high-K material for improved scalabilityADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 17, 2004·50 cites·14 claims
- 2589US6653191B1Memory manufacturing process using bitline rapid thermal annealADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 25, 2003·40 cites·18 claims
- 2689US6410388B1Process for optimizing pocket implant profile by RTA implant annealing for a non-volatile semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 25, 2002·39 cites·18 claims
- 2787US6512264B1Flash memory having pre-interpoly dielectric treatment layer and method of formingADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 28, 2003·37 cites·11 claims
- 2887US6248628B1Method of fabricating an ONO dielectric by nitridation for MNOS memory cellsADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 19, 2001·68 cites·20 claims
- 2985US7001814B1Laser thermal annealing methods for flash memory devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 21, 2006·31 cites·27 claims
- 3085US6969886B1ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devicesFASL LLC·Filed 2004·Granted Nov 29, 2005·28 cites·20 claims
- 3185US6884681B1Method of manufacturing a semiconductor memory with deuterated materialsFASL LLC·Filed 2003·Granted Apr 26, 2005·31 cites·10 claims
- 3285US6828162B1System and method for active control of BPSG depositionADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 7, 2004·32 cites·15 claims
- 3384US6774432B1UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOLADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 10, 2004·31 cites·20 claims
- 3484US6693004B1Interfacial barrier layer in semiconductor devices with high-K gate dielectric materialADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 17, 2004·33 cites·21 claims
- 3584US6563578B2In-situ thickness measurement for use in semiconductor processingADVANCED MICRO DEVICES INC·Filed 2001·Granted May 13, 2003·30 cites·21 claims
- 3683US6955965B1Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor deviceFASL LLC·Filed 2003·Granted Oct 18, 2005·26 cites·20 claims
- 3783US6774989B1Interlayer dielectric void detectionADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 10, 2004·21 cites·11 claims
- 3883US6731006B1Doped copper interconnects using laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2002·Granted May 4, 2004·33 cites·20 claims
- 3982US6849925B1Preparation of composite high-K/standard-K dielectrics for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 1, 2005·22 cites·20 claims
- 4081US6764966B1Spacers with a graded dielectric constant for semiconductor devices having a high-K dielectricADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·28 cites·5 claims
- 4181US6319775B1Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 20, 2001·65 cites·14 claims
- 4280US6509282B1Silicon-starved PECVD method for metal gate electrode dielectric spacerADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 21, 2003·19 cites·20 claims
- 4379US6783591B1Laser thermal annealing method for high dielectric constant gate oxide filmsADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 31, 2004·20 cites·15 claims
- 4479US6633392B1X-ray reflectance system to determine suitability of SiON ARC layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 14, 2003·21 cites·19 claims
- 4578US8368219B2Buried silicide local interconnect with sidewall spacers and method for making the sameADVANCED MICRO DEVICES INC·Filed 2011·Granted Feb 5, 2013·3 cites·20 claims
- 4678US7163860B1Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory deviceSPANSION LLC·Filed 2003·Granted Jan 16, 2007·25 cites·19 claims
- 4777US6872643B1Implant damage removal by laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 29, 2005·18 cites·4 claims
- 4877US6180538B1Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-depositionADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 30, 2001·50 cites·18 claims
- 4976US7079975B1Scatterometry and acoustic based active control of thin film deposition processADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 18, 2006·20 cites·10 claims
- 5076US6727176B2Method of forming reliable Cu interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 27, 2004·22 cites·15 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Arvind Halliyal files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →