Inventor · disambiguated record
Arjun Kar-Roy
Also filed as: KAR ROY ARJUN
22 granted patents·299 citations·filing 2000–2018
96Inventor score
Top patents by PatentIndex Score
22 records- 0192US7589009B1Method for fabricating a top conductive layer in a semiconductor die and related structureNEWPORT FAB LLC·Filed 2006·Granted Sep 15, 2009·21 cites·20 claims
- 0289US6777777B1High density composite MIM capacitor with flexible routing in semiconductor diesNEWPORT FAB LLC·Filed 2003·Granted Aug 17, 2004·54 cites·12 claims
- 0388US9887123B2Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related methodNEWPORT FAB LLC·Filed 2015·Granted Feb 6, 2018·5 cites·13 claims
- 0488US6680521B1High density composite MIM capacitor with reduced voltage dependence in semiconductor diesNEWPORT FAB LLC·Filed 2003·Granted Jan 20, 2004·46 cites·13 claims
- 0586US6430028B1Method for fabrication of an MIM capacitor and related structureNEWPORT FAB LLC·Filed 2000·Granted Aug 6, 2002·38 cites·10 claims
- 0685US7897484B2Fabricating a top conductive layer in a semiconductor dieNEWPORT FAB LLC·Filed 2009·Granted Mar 1, 2011·9 cites·19 claims
- 0784US7772673B1Deep trench isolation and method for forming sameNEWPORT FAB LLC·Filed 2007·Granted Aug 10, 2010·12 cites·17 claims
- 0883US7704874B1Method for fabricating a frontside through-wafer via in a processed wafer and related structureNEWPORT FAB LLC·Filed 2006·Granted Apr 27, 2010·9 cites·19 claims
- 0982US8598713B2Deep silicon via for grounding of circuits and devices, emitter ballasting and isolationBLASCHKE VOLKER·Filed 2010·Granted Dec 3, 2013·7 cites·20 claims
- 1081US8212331B1Method for fabricating a backside through-wafer via in a processed wafer and related structureKAR-ROY ARJUN·Filed 2007·Granted Jul 3, 2012·8 cites·18 claims
- 1181US8098351B2Self-planarized passivation dielectric for liquid crystal on silicon structure and related methodKAR-ROY ARJUN·Filed 2008·Granted Jan 17, 2012·7 cites·20 claims
- 1279US9346669B2Robust MEMS structure with via cap and related methodNEWPORT FAB·Filed 2015·Granted May 24, 2016·3 cites·20 claims
- 1378US7041569B1Method for fabricating a high density composite MIM capacitor with reduced voltage dependence in semiconductor diesNEWPORT FAB LLC·Filed 2003·Granted May 9, 2006·22 cites·9 claims
- 1477US6411492B1Structure and method for fabrication of an improved capacitorCONEXANT SYSTEMS INC·Filed 2000·Granted Jun 25, 2002·27 cites·16 claims
- 1573US7078310B1Method for fabricating a high density composite MIM capacitor with flexible routing in semiconductor diesNEWPORT FAB LLC·Filed 2004·Granted Jul 18, 2006·18 cites·8 claims
- 1671US10615071B2Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related methodNEWPORT FAB LLC·Filed 2017·Granted Apr 7, 2020·1 cites·12 claims
- 1768US9105681B2Method for forming deep silicon via for grounding of circuits and devices, emitter ballasting and isolationNEWPORT FAB LLC·Filed 2012·Granted Aug 11, 2015·2 cites·16 claims
- 1866US9458011B2Scalable self-supported MEMS structure and related methodNEWPORT FAB LLC·Filed 2015·Granted Oct 4, 2016·1 cites·20 claims
- 1963US9136157B1Deep N wells in triple well structuresKAR-ROY ARJUN·Filed 2005·Granted Sep 15, 2015·3 cites·13 claims
- 2057US10615072B2Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related methodNEWPORT FAB LLC·Filed 2018·Granted Apr 7, 2020·0 cites·15 claims
- 2154US7052966B2Deep N wells in triple well structures and method for fabricating sameNEWPORT FAB LLC·Filed 2003·Granted May 30, 2006·6 cites·17 claims
- 2251US9377350B2Light sensor with chemically resistant and robust reflector stackNEWPORT FAB LLC·Filed 2015·Granted Jun 28, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →