Inventor · disambiguated record
Arthur V. Pohm
Also filed as: POHM ARTHUR V
34 granted patents·3 pending applications·1,750 citations·filing 1976–2015
98Inventor score
Files withNVE CORP14NONVOLATILE ELECTRONICS INC13HONEYWELL INC3SEAGATE TECHNOLOGY LLC2DAUGHTON JAMES M1
Top patents by PatentIndex Score
37 records- 0199US6744086B2Current switched magnetoresistive memory cellNVE CORP·Filed 2002·Granted Jun 1, 2004·276 cites·59 claims
- 0298US4780848AMagnetoresistive memory with multi-layer storage cells having layers of limited thicknessHONEYWELL INC·Filed 1986·Granted Oct 25, 1988·184 cites·22 claims
- 0397US6777730B2Antiparallel magnetoresistive memory cellsNVE CORP·Filed 2002·Granted Aug 17, 2004·171 cites·68 claims
- 0495US6538921B2Circuit selection of magnetic memory cells and related cell structuresNVE CORP·Filed 2001·Granted Mar 25, 2003·81 cites·100 claims
- 0595US6404191B2Read heads in planar monolithic integrated circuit chipsNVE CORP·Filed 2001·Granted Jun 11, 2002·76 cites·35 claims
- 0693US5892708AMagnetoresistive memory using large fraction of memory cell films for data storageNONVOLATILE ELECTRONICS INC·Filed 1998·Granted Apr 6, 1999·85 cites·10 claims
- 0793US5420819AMethod for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storageNONVOLATILE ELECTRONICS INC·Filed 1992·Granted May 30, 1995·86 cites·14 claims
- 0893US5251170AOffset magnetoresistive memory structuresNONVOLATILE ELECTRONICS INC·Filed 1991·Granted Oct 5, 1993·92 cites·14 claims
- 0992US6963098B2Thermally operated switch control memory cellNVE CORP·Filed 2004·Granted Nov 8, 2005·63 cites·22 claims
- 1091US7148531B2Magnetoresistive memory SOI cellNVE CORP·Filed 2005·Granted Dec 12, 2006·27 cites·27 claims
- 1191US6535416B1Magnetic memory coincident thermal pulse data storageNVE CORP·Filed 2000·Granted Mar 18, 2003·71 cites·79 claims
- 1291US5424236AMethod for forming offset magnetoresistive memory structuresNONVOLATILE ELECTRONICS INC·Filed 1993·Granted Jun 13, 1995·72 cites·7 claims
- 1390US7177178B2magnetic memory layers thermal pulse transitionsNVE CORP·Filed 2005·Granted Feb 13, 2007·18 cites·21 claims
- 1488US6021065ASpin dependent tunneling memoryNONVOLATILE ELECTRONICS INC·Filed 1997·Granted Feb 1, 2000·76 cites·14 claims
- 1582US5636159AMagnetoresistive memory using large fractions of memory cell films for data storageNONVOLATILE ELECTRONICS INC·Filed 1995·Granted Jun 3, 1997·40 cites·15 claims
- 1679US7266013B2Magnetic memory layers thermal pulse transitionsNVE CORP·Filed 2007·Granted Sep 4, 2007·8 cites·23 claims
- 1779US6275411B1Spin dependent tunneling memoryNONVOLATILE ELECTRONICS INC·Filed 1999·Granted Aug 14, 2001·29 cites·66 claims
- 1879US5966322AGiant magnetoresistive effect memory cellNONVOLATILE ELECTRONICS INC·Filed 1997·Granted Oct 12, 1999·34 cites·40 claims
- 1979US5949707AGiant magnetoresistive effect memory cellNONVOLATILE ELECTRONICS INC·Filed 1996·Granted Sep 7, 1999·36 cites·45 claims
- 2076US6674664B2Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cellsNVE CORP·Filed 2002·Granted Jan 6, 2004·23 cites·50 claims
- 2175US6349053B1Spin dependent tunneling memoryNVE CORP·Filed 2001·Granted Feb 19, 2002·19 cites·18 claims
- 2271US6147900ASpin dependent tunneling memoryNONVOLATILE ELECTRONICS INC·Filed 1999·Granted Nov 14, 2000·32 cites·24 claims
- 2370US7023723B2Magnetic memory layers thermal pulse transitionsNVE CORP·Filed 2003·Granted Apr 4, 2006·12 cites·21 claims
- 2467US7813165B2Magnetic memory layers thermal pulse transitionsNVE CORP·Filed 2007·Granted Oct 12, 2010·4 cites·9 claims
- 2567US6455177B1Stabilization of GMR devicesSEAGATE TECHNOLOGY LLC·Filed 1999·Granted Sep 24, 2002·23 cites·17 claims
- 2665US6072382ASpin dependent tunneling sensorNONVOLATILE ELECTRONICS INC·Filed 1999·Granted Jun 6, 2000·41 cites·25 claims
- 2760US5060193AMagnetic state entry assuranceHONEYWELL INC·Filed 1990·Granted Oct 22, 1991·20 cites·20 claims
- 2859US5768180AMagnetoresistive memory using large fractions of memory cell films for data storageNONVOLATILE ELECTRONICS INC·Filed 1997·Granted Jun 16, 1998·14 cites·22 claims
- 2955US5012444AOpposed field magnetoresistive memory sensingHONEYWELL INC·Filed 1990·Granted Apr 30, 1991·17 cites·36 claims
- 3049US6709696B2Stabilization of GMR devicesSEAGATE TECHNOLOGY LLC·Filed 2002·Granted Mar 23, 2004·3 cites·16 claims
- 3148US6340886B1Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surfaceNONVOLATILE ELECTRONICS INC·Filed 1997·Granted Jan 22, 2002·13 cites·11 claims
- 3243USRE47583ECircuit selection of magnetic memory cells and related cell structuresNVE CORP·Filed 2015·Granted Aug 27, 2019·0 cites·100 claims
- 3338USRE44878ECurrent switched magnetoresistive memory cellDAUGHTON JAMES M·Filed 2012·Granted May 6, 2014·0 cites·105 claims
- 3434US2006291278A1Nano-Reflectors for Thin, Flat Display DevicesNANO ELECTROCHEM INC·Filed 2006·Application pending·0 cites
- 3533US2008002329A1High Dielectric, Non-Linear CapacitorPOHM ARTHUR V·Filed 2006·Application pending·0 cites
- 3632US2007206342A1High Dielectric, Non-Linear Nano-CapacitorTIPTON ANDREW L·Filed 2006·Application pending·0 cites
- 3731US4088954AMagnetometer with a miniature transducer and automatic scanningNASA·Filed 1976·Granted May 9, 1978·4 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →