Inventor · disambiguated record
Arnaud Yvon
Also filed as: YVON ARNAUD
7 granted patents·3 pending applications·3 citations·filing 2014–2024
73Inventor score
Files withST MICROELECTRONICS TOURS SAS7STMICROELECTRONICS APPLICATION GMBH2ST MICROELECTRONICS INT NV1
Top patents by PatentIndex Score
10 records- 0172US12477816B2Monolithic component comprising a gallium nitride power transistorSTMICROELECTRONICS APPLICATION GMBH·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 0269US9536747B2Method for treating a gallium nitride layer comprising dislocationsST MICROELECTRONICS TOURS SAS·Filed 2014·Granted Jan 3, 2017·2 cites·19 claims
- 0360US9735292B2High-voltage gallium nitride schottky diodeST MICROELECTRONICS TOURS SAS·Filed 2016·Granted Aug 15, 2017·1 cites·23 claims
- 0459US11810911B2Monolithic component comprising a gallium nitride power transistorSTMICROELECTRONICS APPLICATION GMBH·Filed 2020·Granted Nov 7, 2023·0 cites·5 claims
- 0552US2025081494A1Recessed gate hemt processing with reversed etchingST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 0651US2024204112A1Thin diodesST MICROELECTRONICS TOURS SAS·Filed 2024·Application pending·0 cites
- 0750US9991341B2Method for treating a gallium nitride layer comprising dislocationsST MICROELECTRONICS TOURS SAS·Filed 2016·Granted Jun 5, 2018·0 cites·30 claims
- 0847US11949023B2Thin diodesST MICROELECTRONICS TOURS SAS·Filed 2021·Granted Apr 2, 2024·0 cites·18 claims
- 0939US11830873B2Electronic circuit comprising diodesST MICROELECTRONICS TOURS SAS·Filed 2019·Granted Nov 28, 2023·0 cites·17 claims
- 1025US2015221782A1Vertical gallium nitride schottky diodeST MICROELECTRONICS TOURS SAS·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →