Inventor · disambiguated record
Asen Asenov
Also filed as: ASENOV ASEN
12 granted patents·2 pending applications·30 citations·filing 2012–2023
86Inventor score
Top patents by PatentIndex Score
14 records- 0184US8994123B2Variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)ASENOV ASEN·Filed 2012·Granted Mar 31, 2015·12 cites·33 claims
- 0283US9012276B2Variation resistant MOSFETs with superior epitaxial propertiesGOLD STANDARD SIMULATIONS LTD·Filed 2014·Granted Apr 21, 2015·7 cites·18 claims
- 0374US10740525B2Semiconductor device simulationSYNOPSYS INC·Filed 2016·Granted Aug 11, 2020·2 cites·13 claims
- 0472US9922713B2Memory deviceUNIV GLASGOW COURT·Filed 2014·Granted Mar 20, 2018·2 cites·18 claims
- 0572US9847404B2Fluctuation resistant FinFETGOLD STANDARD SIMULATIONS LTD·Filed 2013·Granted Dec 19, 2017·3 cites·21 claims
- 0671US11049939B2Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operationSEMIWISE LTD·Filed 2016·Granted Jun 29, 2021·2 cites·15 claims
- 0756US9269804B2Gate recessed FDSOI transistor with sandwich of active and etch control layersGOLD STANDARD SIMULATIONS LTD·Filed 2013·Granted Feb 23, 2016·1 cites·15 claims
- 0856US9190485B2Fluctuation resistant FDSOI transistor with implanted subchannelGOLD STANDARD SIMULATIONS LTD·Filed 2013·Granted Nov 17, 2015·1 cites·30 claims
- 0955US11757002B2Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operationSEMIWISE LTD·Filed 2021·Granted Sep 12, 2023·0 cites·16 claims
- 1048US2023171944A1A Memory Device Comprising an Electrically Floating Body TransistorZENO SEMICONDUCTOR INC·Filed 2021·Application pending·0 cites
- 1148US2025328711A1Determining compact model parameters for modelling cmos devices at cryogenic temperaturesSEMIWISE LTD·Filed 2023·Application pending·0 cites
- 1241US9312362B2Manufacture of a variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)GOLD STANDARD SIMULATIONS LTD·Filed 2015·Granted Apr 12, 2016·0 cites·25 claims
- 1338US9263568B2Fluctuation resistant low access resistance fully depleted SOI transistor with improved channel thickness control and reduced access resistanceGOLD STANDARD SIMULATIONS LTD·Filed 2013·Granted Feb 16, 2016·0 cites·17 claims
- 1431US9373684B2Method of manufacturing variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)ASENOV ASEN·Filed 2012·Granted Jun 21, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →