Inventor · disambiguated record
Atsushi Azuma
Also filed as: AZUMA ATSUSHI
11 granted patents·8 pending applications·141 citations·filing 1994–2025
90Inventor score
Top patents by PatentIndex Score
19 records- 0186US6642581B2Semiconductor device comprising buried channel regionTOSHIBA KK·Filed 2002·Granted Nov 4, 2003·39 cites·5 claims
- 0284US6515320B1Semiconductor device and method of manufacturing the same including thicker insulating layer on lower part of electrodeTOSHIBA KK·Filed 2001·Granted Feb 4, 2003·36 cites·10 claims
- 0380US9836570B1Semiconductor layout generationGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 5, 2017·4 cites·17 claims
- 0472US6649462B2Semiconductor device and method of manufacturing the same including T-shaped gateTOSHIBA KK·Filed 2002·Granted Nov 18, 2003·17 cites·9 claims
- 0572US2024084106A1Kneaded material, method of producing kneaded material, molded body, and optical memberFUJIFILM CORP·Filed 2023·Application pending·0 cites
- 0672US2024327613A1Resin composition, cured substance, optical member, ultraviolet absorber, compound, production method of compound, and polymerFUJIFILM CORP·Filed 2024·Application pending·0 cites
- 0769US2025388739A1Composition, cured substance, and optical memberFUJIFILM CORP·Filed 2025·Application pending·0 cites
- 0864US6642585B2Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted Nov 4, 2003·19 cites·12 claims
- 0963US2023227424A1Ultraviolet absorbing agent, resin composition, cured substance, optical member, method of producing ultraviolet absorbing agent, and compoundFUJIFILM CORP·Filed 2023·Application pending·0 cites
- 1058US6933590B2Semiconductor device comprising plurality of semiconductor areas having the same top surface and different film thicknesses and manufacturing method for the sameTOSHIBA KK·Filed 2003·Granted Aug 23, 2005·8 cites·7 claims
- 1157US7288470B2Semiconductor device comprising buried channel region and method for manufacturing the sameTOSHIBA KK·Filed 2007·Granted Oct 30, 2007·1 cites·7 claims
- 1257US6897534B2Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted May 24, 2005·6 cites·3 claims
- 1344US2005189600A1Semiconductor device having gate electrode of staked structure including polysilicon layer and metal layer and method of manufacturing the sameTOSHIBA KK·Filed 2005·Application pending·0 cites
- 1443US7880237B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Feb 1, 2011·0 cites·14 claims
- 1543US6979866B2Semiconductor device with SOI region and bulk region and method of manufacture thereofTOSHIBA KK·Filed 2003·Granted Dec 27, 2005·2 cites·11 claims
- 1642US5531650APower transmission beltBANDO CHEMICAL IND·Filed 1994·Granted Jul 2, 1996·9 cites·2 claims
- 1737US2004265813A1Dna arrays for measuring sensitivity to anticancer agentTAKECHI TEIJI·Filed 2002·Application pending·0 cites
- 1837US2007246750A1Control of body potential of partially-depleted field-effect transistorsTOSHIBA AMERICA ELECTRONICS CO·Filed 2006·Application pending·0 cites
- 1936US2004084731A1Semiconductor device comprising buried channel region and method for manufacturing the sameTOSHIBA KK·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →