Inventor · disambiguated record
Atsushi Narazaki
Also filed as: NARAZAKI ATSUSHI
33 granted patents·4 pending applications·151 citations·filing 1995–2019
96Inventor score
Files withMITSUBISHI ELECTRIC CORP21NARAZAKI ATSUSHI8NAKATA KAZUNARI2FUJII RYOICHI1HISAMOTO YOSHIAKI1
Top patents by PatentIndex Score
37 records- 0183US8247867B2Semiconductor deviceNAKATA KAZUNARI·Filed 2010·Granted Aug 21, 2012·8 cites·9 claims
- 0282US9799648B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Oct 24, 2017·4 cites·9 claims
- 0382US6927455B2Power semiconductor device having semiconductor-layer-forming position controlled by ion implantation without using photoresist pattern, and method of manufacturing such power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Aug 9, 2005·31 cites·28 claims
- 0480US10192977B2Power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Jan 29, 2019·3 cites·9 claims
- 0579US8552468B2Power semiconductor deviceNARAZAKI ATSUSHI·Filed 2010·Granted Oct 8, 2013·6 cites·3 claims
- 0677US9219113B2Semiconductor device having breakdown voltage enhancement structureMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Dec 22, 2015·3 cites·8 claims
- 0774US8809969B2Semiconductor deviceTARUI YOICHIRO·Filed 2009·Granted Aug 19, 2014·6 cites·19 claims
- 0872US8124533B2Method of manufacturing power semiconductor deviceNARAZAKI ATSUSHI·Filed 2009·Granted Feb 28, 2012·5 cites·9 claims
- 0968US9105486B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 11, 2015·2 cites·5 claims
- 1068US7045831B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2004·Granted May 16, 2006·15 cites·16 claims
- 1166US7319264B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Jan 15, 2008·3 cites·9 claims
- 1265US10243067B2Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Mar 26, 2019·2 cites·14 claims
- 1362US10176994B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jan 8, 2019·1 cites·11 claims
- 1462US6642600B2Insulated gate semiconductor device having first trench and second trench connected to the sameMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Nov 4, 2003·12 cites·20 claims
- 1559US8435417B2Method of manufacturing semiconductor deviceNAKATA KAZUNARI·Filed 2010·Granted May 7, 2013·1 cites·5 claims
- 1659US8178365B2Method of manufacturing semiconductor deviceNARAZAKI ATSUSHI·Filed 2011·Granted May 15, 2012·1 cites·6 claims
- 1757US6285058B1Insulated gate semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 4, 2001·20 cites·20 claims
- 1857US5545573AMethod of fabricating insulated gate semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 13, 1996·18 cites·25 claims
- 1956US6495863B2Semiconductor device having diode for input protection circuit of MOS structure deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 17, 2002·7 cites·8 claims
- 2055US9431479B2High breakdown voltage semiconductor device having a resurf layerHONDA SHIGETO·Filed 2010·Granted Aug 30, 2016·1 cites·10 claims
- 2154US10892352B2Power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Jan 12, 2021·0 cites·10 claims
- 2252US8450183B2Power semiconductor device and method of manufacturing the sameFUJII RYOICHI·Filed 2010·Granted May 28, 2013·1 cites·5 claims
- 2351US8530966B2Semiconductor deviceNARAZAKI ATSUSHI·Filed 2011·Granted Sep 10, 2013·1 cites·4 claims
- 2444US10431658B2Silicon carbide semiconductor device, manufacturing method therefor and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Oct 1, 2019·0 cites·13 claims
- 2544US7741655B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Jun 22, 2010·0 cites·10 claims
- 2642US10797169B2Silicon carbide semiconductor device and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Oct 6, 2020·0 cites·14 claims
- 2742US8884383B2Semiconductor device and method of testing the sameNARAZAKI ATSUSHI·Filed 2011·Granted Nov 11, 2014·0 cites·9 claims
- 2842US2007114577A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Application pending·0 cites
- 2942US2015255535A1Semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2013·Application pending·0 cites
- 3040US8618604B2Semiconductor device and method of manufacturing the sameNARAZAKI ATSUSHI·Filed 2010·Granted Dec 31, 2013·0 cites·14 claims
- 3140US8593167B2Semiconductor device test method and apparatus, and semiconductor deviceNARAZAKI ATSUSHI·Filed 2011·Granted Nov 26, 2013·0 cites·4 claims
- 3240US8519733B2Method of measuring characteristics of a semiconductor element and method of manufacturing a semiconductor deviceNARAZAKI ATSUSHI·Filed 2011·Granted Aug 27, 2013·0 cites·8 claims
- 3338US8742474B2Power semiconductor device having an active region and an electric field reduction regionHISAMOTO YOSHIAKI·Filed 2007·Granted Jun 3, 2014·0 cites·8 claims
- 3437US6933576B2Semiconductor device including a predetermined film formed at a border between dielectric filmsRENESAS TECH CORP·Filed 2003·Granted Aug 23, 2005·0 cites·8 claims
- 3536US2012309117A1Method for manufacturing semiconductor deviceSUZUKI YUICHIRO·Filed 2012·Application pending·0 cites
- 3636US2011233715A1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2010·Application pending·0 cites
- 3733US12021118B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jun 25, 2024·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →