Inventor · disambiguated record
Atsuko Sakata
Also filed as: SAKATA ATSUKO
72 granted patents·20 pending applications·835 citations·filing 1997–2025
99Inventor score
Top patents by PatentIndex Score
92 records- 0199US9613872B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 4, 2017·156 cites·20 claims
- 0298US9406694B1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Aug 2, 2016·94 cites·12 claims
- 0397US9570464B1Method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2016·Granted Feb 14, 2017·31 cites·20 claims
- 0496US11502204B2Semiconductor device and semiconductor memory deviceKIOXIA CORP·Filed 2021·Granted Nov 15, 2022·3 cites·20 claims
- 0596US9362487B2Ferroelectric memory and manufacturing method of the sameTOSHIBA KK·Filed 2013·Granted Jun 7, 2016·32 cites·3 claims
- 0695US9793293B1Semiconductor device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2017·Granted Oct 17, 2017·13 cites·17 claims
- 0794US6423192B1Sputtering apparatus and film forming methodTOSHIBA KK·Filed 2000·Granted Jul 23, 2002·91 cites·20 claims
- 0893US6071810AMethod of filling contact holes and wiring grooves of a semiconductor deviceTOSHIBA KK·Filed 1997·Granted Jun 6, 2000·101 cites·2 claims
- 0992US9754793B2Method for manufacturing semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Sep 5, 2017·8 cites·20 claims
- 1092US8482126B2Semiconductor deviceWADA MAKOTO·Filed 2011·Granted Jul 9, 2013·13 cites·21 claims
- 1192US7399706B2Manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2005·Granted Jul 15, 2008·25 cites·10 claims
- 1292US7351656B2Semiconductor device having oxidized metal film and manufacture method of the sameKABUSHIKI KAIHSA TOSHIBA·Filed 2006·Granted Apr 1, 2008·20 cites·19 claims
- 1392US6673704B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Jan 6, 2004·42 cites·26 claims
- 1490US6727593B2Semiconductor device with improved bondingTOSHIBA KK·Filed 2002·Granted Apr 27, 2004·48 cites·9 claims
- 1588US10170494B2Semiconductor device and method for manufacturing the sameTOSHIBA MEMORY CORP·Filed 2016·Granted Jan 1, 2019·6 cites·17 claims
- 1688US9673217B1Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2016·Granted Jun 6, 2017·6 cites·6 claims
- 1787US9159615B2Graphene interconnection and method of manufacturing the sameSAITO TATSURO·Filed 2011·Granted Oct 13, 2015·11 cites·20 claims
- 1887US8922018B2Semiconductor device and semiconductor device manufacturing methodISHIZAKI TAKESHI·Filed 2012·Granted Dec 30, 2014·13 cites·9 claims
- 1986US9780111B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Oct 3, 2017·5 cites·13 claims
- 2084US7994054B2Semiconductor device having oxidized metal film and manufacture method of the sameTOSHIBA KK·Filed 2007·Granted Aug 9, 2011·6 cites·20 claims
- 2181US10566280B2Semiconductor device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2018·Granted Feb 18, 2020·3 cites·20 claims
- 2281US9431345B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted Aug 30, 2016·5 cites·5 claims
- 2380US8487449B2Carbon nanotube interconnection and manufacturing method thereofWADA MAKOTO·Filed 2011·Granted Jul 16, 2013·6 cites·18 claims
- 2480US7791202B2Semiconductor device having oxidized metal film and manufacture method of the sameTOSHIBA KK·Filed 2008·Granted Sep 7, 2010·4 cites·20 claims
- 2579US8648464B2Semiconductor device and manufacturing method thereofKITAMURA MASAYUKI·Filed 2012·Granted Feb 11, 2014·6 cites·4 claims
- 2679US8148274B2Semiconductor device having oxidized metal film and manufacture method of the sameWADA JUNICHI·Filed 2008·Granted Apr 3, 2012·4 cites·12 claims
- 2775US9905462B2Semiconductor device and method for manufacturing the sameTOSHIBA MEMORY CORP·Filed 2015·Granted Feb 27, 2018·2 cites·6 claims
- 2875US9129970B2Semiconductor device having oxidized Ti- and N-containing layer, and manufacturing of the sameSAKATA ATSUKO·Filed 2007·Granted Sep 8, 2015·4 cites·17 claims
- 2974US10325805B2Method for manufacturing a semiconductor deviceTOSHIBA KK·Filed 2017·Granted Jun 18, 2019·1 cites·16 claims
- 3074US7675183B2Semiconductor device including an insulating film and insulating pillars and manufacturing method of the semiconductor deviceTOSHIBA KK·Filed 2008·Granted Mar 9, 2010·4 cites·11 claims
- 3174US6946387B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2003·Granted Sep 20, 2005·11 cites·2 claims
- 3273US9911753B2Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Mar 6, 2018·2 cites·9 claims
- 3373US9484206B2Semiconductor device including catalyst layer and graphene layer thereon and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Nov 1, 2016·2 cites·19 claims
- 3473US8907484B2Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2013·Granted Dec 9, 2014·3 cites·20 claims
- 3572US12406842B2Substrate processing apparatus and method of producing semiconductor deviceKIOXIA CORP·Filed 2022·Granted Sep 2, 2025·0 cites·12 claims
- 3671US10763122B2Method of manufacturing semiconductor device and etching maskTOSHIBA MEMORY CORP·Filed 2017·Granted Sep 1, 2020·1 cites·16 claims
- 3771US8742592B2Semiconductor device including a plug and method for manufacturing the sameWAKATSUKI SATOSHI·Filed 2012·Granted Jun 3, 2014·3 cites·3 claims
- 3871US6538323B1Semiconductor device having an electrode structure comprising a conductive fine particle filmTOSHIBA KK·Filed 1999·Granted Mar 25, 2003·30 cites·15 claims
- 3970US8110497B2Method for manufacturing semiconductor deviceSAKATA ATSUKO·Filed 2009·Granted Feb 7, 2012·3 cites·20 claims
- 4069US11978807B2Semiconductor device and semiconductor memory deviceKIOXIA CORP·Filed 2022·Granted May 7, 2024·0 cites·16 claims
- 4169US10541250B2Method for manufacturing semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Jan 21, 2020·1 cites·11 claims
- 4269US9343402B2Semiconductor device having Ti- and N-containing layer, and manufacturing method of sameTOSHIBA KK·Filed 2015·Granted May 17, 2016·1 cites·13 claims
- 4368US11705404B2Semiconductor device and method of manufacturing the sameKIOXIA CORP·Filed 2021·Granted Jul 18, 2023·0 cites·5 claims
- 4467US10269825B2Semiconductor device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2016·Granted Apr 23, 2019·1 cites·13 claims
- 4566US2022195594A1Semiconductor manufacturing apparatus and method of manufacturing semiconductor deviceKIOXIA CORP·Filed 2022·Application pending·0 cites
- 4665US9779978B2Method of manufacturing semiconductor device and semiconductor manufacturing apparatusTOSHIBA KK·Filed 2015·Granted Oct 3, 2017·1 cites·16 claims
- 4764US12477718B2Semiconductor device and semiconductor memory device each having portions of oxide semiconductor between gate insulating layer and electrodesKIOXIA CORP·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 4864US9418938B2Semiconductor device having a graphene interconnectTOSHIBA KK·Filed 2014·Granted Aug 16, 2016·1 cites·10 claims
- 4964US9018764B2Semiconductor device having barrier metal layerTOSHIBA KK·Filed 2013·Granted Apr 28, 2015·1 cites·3 claims
- 5063US10741443B2Method for manufacturing a semiconductor deviceKIOXIA CORP·Filed 2019·Granted Aug 11, 2020·0 cites·9 claims
Showing the top 50 of 92 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →