Carbon nanotube interconnection and manufacturing method thereof

Abstract

According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.

What is claimed is: 
     
       1. A carbon nanotube interconnection comprising:
 a first conductive layer; 
 an insulating film formed on the first conductive layer and including a hole extending from an upper surface to a lower surface; 
 a catalyst underlying film formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole; 
 a catalyst deactivation film formed on the catalyst underlying film on the side surface in the hole; 
 a catalyst film formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole; and 
 carbon nanotubes formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole. 
 
     
     
       2. The interconnection of  claim 1 , further comprising a second conductive layer formed on the insulating film,
 wherein the carbon nanotubes include the other end in contact with the second conductive layer. 
 
     
     
       3. The interconnection of  claim 1 , further comprising:
 a second conductive layer formed on the insulating film; and 
 a metal film formed between the carbon nanotubes and the second conductive layer in the hole, 
 wherein the carbon nanotubes include the other end in contact with the metal film. 
 
     
     
       4. The interconnection of  claim 3 , wherein
 the metal film contains Ti, and 
 the other end of the carbon nanotubes contains Ti carbide. 
 
     
     
       5. The interconnection of  claim 3 , wherein the other end of the carbon nanotubes is open. 
     
     
       6. The interconnection of  claim 1 , wherein
 the catalyst underlying film contains one of Ta, Ti, TaN, and TiN, 
 the catalyst film contains one of Co, Ni, and Fe, and 
 the catalyst deactivation film contains one of Si, SIN, SIC, SiCN, Ru, and NiSi. 
 
     
     
       7. The interconnection of  claim 1 , wherein
 the catalyst underlying film contains one of Ti and TiN, and 
 one end of the carbon nanotubes contains Ti carbide. 
 
     
     
       8. The interconnection of  claim 1 , wherein
 the catalyst deactivation film contains one of polysilicon and amorphous silicon, and 
 the catalyst film is silicided. 
 
     
     
       9. The interconnection of  claim 1 , wherein
 the hole has a tapered shape whose diameter increases from a lower side to an upper side, and 
 the catalyst film is not formed on a side surface on the upper side in the hole. 
 
     
     
       10. A carbon nanotube interconnection manufacturing method comprising:
 forming an insulating film on a first conductive layer; 
 forming a hole in the insulating film to extend through the insulating film; 
 forming a catalyst underlying film on the first conducive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole; 
 forming a catalyst deactivation film on the catalyst underlying film on the side surface in the hole; 
 forming a catalyst film on the catalyst underlying film on the bottom surface in the hole and on the catalyst deactivation film on the side surface in the hole; and 
 growing carbon nanotubes from the catalyst film on the bottom surface in the hole. 
 
     
     
       11. The method of  claim 10 , wherein after forming the catalyst film, the catalyst deactivation film and the catalyst film on the side surface in the hole are annealed. 
     
     
       12. The method of  claim 10 , wherein when forming the catalyst deactivation film, the catalyst deactivation film is formed even on an upper surface outside the hole. 
     
     
       13. The method of  claim 12 , wherein
 when growing the carbon nanotubes, the carbon nanotubes are formed to project from the hole, 
 after growing the carbon nanotubes, a metal film is formed on an entire surface to fix projections of the carbon nanotubes, and 
 the metal film and the projections of the carbon nanotubes are polished by metal CMP. 
 
     
     
       14. The method of  claim 12 , wherein
 when growing the carbon nanotubes, the carbon nanotubes are formed not to project from the hole, and 
 after growing the carbon nanotubes, a metal film is formed on the carbon nanotubes to fill the hole. 
 
     
     
       15. The method of  claim 10 , wherein
 when forming the catalyst film, the catalyst film is formed on even an upper surface outside the hole, and 
 after forming the catalyst film, the catalyst film is removed from the upper surface outside the hole. 
 
     
     
       16. The method of  claim 15 , wherein the catalyst film is removed from the upper surface outside the hole by irradiating the upper surface outside the hole with an ion beam at an oblique angle. 
     
     
       17. The method of  claim 10 , wherein
 when forming the catalyst underlying film, the catalyst underlying film is formed on even an upper surface outside the hole, and 
 after forming the catalyst underlying film, the catalyst underlying film is removed from the upper surface outside the hole. 
 
     
     
       18. The method of  claim 17 , wherein the catalyst underlying film is removed from the upper surface outside the hole by forming an organic film to cover the catalyst underlying film on the upper surface outside the hole, and polishing the organic film and the catalyst underlying film on the upper surface outside the hole by CMP.