Inventor · disambiguated record
Badredin Fatemizadeh
Also filed as: FATEMIZADEH BADREDIN
23 granted patents·3 pending applications·92 citations·filing 1999–2022
94Inventor score
Files withMAXIM INTEGRATED PRODUCTS11ZUNIGA MARCO A4POWER ONE INC2T RAM INC2VOLTERRA SEMICONDUCTOR CORP2
Top patents by PatentIndex Score
26 records- 0195US8647950B2Vertical gate LDMOS deviceZUNIGA MARCO A·Filed 2012·Granted Feb 11, 2014·17 cites·14 claims
- 0290US10269916B2LDMOS transistors and associated systems and methodsMAXIM INTEGRATED PRODUCTS·Filed 2017·Granted Apr 23, 2019·5 cites·18 claims
- 0390US8709899B2Vertical gate LDMOS deviceZUNIGA MARCO A·Filed 2012·Granted Apr 29, 2014·7 cites·31 claims
- 0489US10573744B1Self-aligned, dual-gate LDMOS transistors and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2018·Granted Feb 25, 2020·6 cites·20 claims
- 0585US9722483B2Voltage regulators with multiple transistorsVOLTERRA SEMICONDUCTOR CORP·Filed 2014·Granted Aug 1, 2017·7 cites·14 claims
- 0682US10833164B2LDMOS transistors and associated systems and methodsMAXIM INTEGRATED PRODUCTS·Filed 2019·Granted Nov 10, 2020·2 cites·17 claims
- 0782US6756612B1Carrier coupler for thyristor-based semiconductor deviceT RAM INC·Filed 2002·Granted Jun 29, 2004·25 cites·18 claims
- 0880US10229993B2LDMOS transistors including resurf layers and stepped-gates, and associated systems and methodsMAXIM INTEGRATED PRODUCTS·Filed 2017·Granted Mar 12, 2019·4 cites·17 claims
- 0975US10284072B2Voltage regulators with multiple transistorsVolterra Semiconductor LLC·Filed 2017·Granted May 7, 2019·2 cites·20 claims
- 1070US8866217B2Vertical gate LDMOS deviceZUNIGA MARCO A·Filed 2012·Granted Oct 21, 2014·1 cites·16 claims
- 1169US11557588B2Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layerMAXIM INTEGRATED PRODUCTS·Filed 2021·Granted Jan 17, 2023·0 cites·12 claims
- 1267US11699753B2LDMOS transistors including vertical gates with multiple dielectric sections, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2022·Granted Jul 11, 2023·0 cites·14 claims
- 1365US6872602B1Carrier coupler for thyristor-based semiconductor deviceT RAM INC·Filed 2004·Granted Mar 29, 2005·10 cites·3 claims
- 1460US9159804B2Vertical gate LDMOS deviceVolterra Semiconductor LLC·Filed 2014·Granted Oct 13, 2015·0 cites·17 claims
- 1560US8969158B2Vertical gate LDMOS deviceVOLTERRA SEMICONDUCTOR CORP·Filed 2014·Granted Mar 3, 2015·0 cites·16 claims
- 1659US10964694B2Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layerMAXIM INTEGRATED PRODUCTS·Filed 2019·Granted Mar 30, 2021·0 cites·20 claims
- 1757US10199475B2LDMOS transistors and associated systems and methodsMAXIM INTEGRATED PRODUCTS·Filed 2017·Granted Feb 5, 2019·0 cites·6 claims
- 1857US2020243659A1Transistors with dual gate conductors, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2020·Application pending·0 cites
- 1956US10147801B2Transistor with buried P+ and source contactZUNIGA MARCO A·Filed 2012·Granted Dec 4, 2018·0 cites·18 claims
- 2054US10622452B2Transistors with dual gate conductors, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2018·Granted Apr 14, 2020·0 cites·15 claims
- 2150US11316044B2LDMOS transistors including vertical gates with multiple dielectric sections, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2018·Granted Apr 26, 2022·0 cites·3 claims
- 2249US7049677B2Low cost dielectric isolation method for integration of vertical power MOSFET and lateral driver devicesPOWER ONE INC·Filed 2004·Granted May 23, 2006·3 cites·16 claims
- 2345US7235827B2Vertical power JFET with low on-resistance for high voltage applicationsPOWER ONE INC·Filed 2004·Granted Jun 26, 2007·2 cites·7 claims
- 2436US2005145915A1Selective epi-region method for integration of vertical power MOSFET and lateral driver devicesFiled 2004·Application pending·0 cites
- 2532US2005040459A1Method and structure for improving the gate resistance of a closed cell trench power MOSFETFiled 2003·Application pending·0 cites
- 2630US6242972B1Clamp circuit using PMOS-transistors with a weak temperature dependencySILICON STORAGE TECH INC·Filed 1999·Granted Jun 5, 2001·1 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →