Inventor · disambiguated record
Bastian Haussdoerfer
Also filed as: HAUSSDOERFER BASTIAN
4 granted patents·9 citations·filing 2012–2014
64Inventor score
Files withGLOBALFOUNDRIES INC4
Top patents by PatentIndex Score
4 records- 0176US8815674B1Methods of forming a semiconductor device by performing a wet acid etching process while preventing or reducing loss of active area and/or isolation regionsGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 26, 2014·5 cites·13 claims
- 0273US9177874B2Method of forming a semiconductor device employing an optical planarization layerGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 3, 2015·4 cites·22 claims
- 0345US9177871B2Balancing asymmetric spacersGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 3, 2015·0 cites·21 claims
- 0443US9093526B2Methods of forming a sidewall spacer having a generally triangular shape and a semiconductor device having such a spacerGLOBALFOUNDRIES INC·Filed 2012·Granted Jul 28, 2015·0 cites·10 claims
Join the waitlist — get patent alerts
Get an alert when Bastian Haussdoerfer files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →