Inventor · disambiguated record
Baofu Zhu
Also filed as: ZHU BAOFU
20 granted patents·16 pending applications·43 citations·filing 2009–2024
91Inventor score
Files withGLOBALFOUNDRIES INC12INTEL CORP11GLOBALFOUNDRIES US INC10GLOBALFOUNDRIES SG PTE LTD2ZHANG GUOWEI1
Top patents by PatentIndex Score
36 records- 0192US10002793B1Sub-fin doping methodGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 19, 2018·8 cites·16 claims
- 0291US9947788B2Device with diffusion blocking layer in source/drain regionGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 17, 2018·8 cites·18 claims
- 0387US10164099B2Device with diffusion blocking layer in source/drain regionGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 25, 2018·5 cites·11 claims
- 0487US8790966B2High voltage deviceZHANG GUOWEI·Filed 2011·Granted Jul 29, 2014·8 cites·20 claims
- 0586US8846464B1Semiconductor device having controlled final metal critical dimensionGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 30, 2014·8 cites·20 claims
- 0676US10020386B1High-voltage and analog bipolar devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 10, 2018·2 cites·18 claims
- 0770US9099434B2High voltage deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Aug 4, 2015·2 cites·20 claims
- 0869US11563085B2Transistors with separately-formed source and drainGLOBALFOUNDRIES US INC·Filed 2021·Granted Jan 24, 2023·0 cites·20 claims
- 0967US2024355891A1Conductive bridge through dielectric wall between source or drain contactsINTEL CORP·Filed 2024·Application pending·0 cites
- 1064US8053319B2Method of forming a high voltage deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2009·Granted Nov 8, 2011·2 cites·22 claims
- 1161US2024355890A1Conductive bridge through dielectric wall between source or drain contactsINTEL CORP·Filed 2023·Application pending·0 cites
- 1259US11075268B2Transistors with separately-formed source and drainGLOBALFOUNDRIES US INC·Filed 2019·Granted Jul 27, 2021·0 cites·10 claims
- 1359US2025301708A1Forksheet transistors with self-aligned dielectric spineINTEL CORP·Filed 2024·Application pending·0 cites
- 1457US2025380494A1Subfin engineering to improve semiconductor device performanceINTEL CORP·Filed 2024·Application pending·0 cites
- 1554US2025221023A1Integrated circuit structure with backside contact extensionINTEL CORP·Filed 2023·Application pending·0 cites
- 1652US9966313B2FinFET device and method of manufacturingGLOBALFOUNDRIES INC·Filed 2016·Granted May 8, 2018·0 cites·10 claims
- 1752US2025107195A1Integrated circuit structures with trench contact flyover structureINTEL CORP·Filed 2023·Application pending·0 cites
- 1852US2018233415A1Finfet device and method of manufacturingGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
- 1951US11362178B2Asymmetric source drain structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 14, 2022·0 cites·20 claims
- 2050US11094822B1Source/drain regions for transistor devices and methods of forming sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
- 2150US10985244B2N-well resistorGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
- 2250US2025081597A1Integrated circuit structures having uniform grid metal gate and trench contact plugINTEL CORP·Filed 2023·Application pending·0 cites
- 2349US11239366B2Transistors with an asymmetrical source and drainGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 1, 2022·0 cites·17 claims
- 2449US2024321685A1Semiconductor devices between gate cuts and deep backside viasINTEL CORP·Filed 2023·Application pending·0 cites
- 2549US2024321978A1Contact extended over an adjacent source or drain regionINTEL CORP·Filed 2023·Application pending·0 cites
- 2648US11362177B2Epitaxial semiconductor material regions for transistor devices and methods of forming sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 14, 2022·0 cites·13 claims
- 2748US2024113108A1Wall that includes a gas between metal gates of a semiconductor deviceINTEL CORP·Filed 2022·Application pending·0 cites
- 2847US11239315B2Dual trench isolation structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 2947US11205699B2Epitaxial semiconductor material regions for transistor devices and methods of forming sameGLOBALFOUNDRIES US INC·Filed 2019·Granted Dec 21, 2021·0 cites·20 claims
- 3047US11177385B2Transistors with a hybrid source or drainGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 16, 2021·0 cites·13 claims
- 3146US2024321872A1Gate link across gate cut in semiconductor devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 3245US10910276B1STI structure with liner along lower portion of longitudinal sides of active region, and related FET and methodGLOBALFOUNDRIES INC·Filed 2019·Granted Feb 2, 2021·0 cites·20 claims
- 3342US2021043766A1Structure with counter doping region between n and p wells under gate structureGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 3436US2018108732A1Notched fin structures and methods of manufactureGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3535US2017288041A1Method for forming a doped region in a fin using a variable thickness spacer and the resulting deviceGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3635US2017309623A1Method, apparatus, and system for increasing drive current of finfet deviceGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →