Inventor · disambiguated record
Benjamin Colombeau
Also filed as: COLOMBEAU BENJAMIN
49 granted patents·36 pending applications·189 citations·filing 2007–2025
97Inventor score
Files withAPPLIED MATERIALS INC68VARIAN SEMICONDUCTOR EQUIPMENT4VARIAN SEMICONDUCTOR EQUIPMENT ASS INC4GLOBALFOUNDRIES SG PTE LTD2APPLIED MATERIALS ISRAEL LTD1
Top patents by PatentIndex Score
85 records- 0197US8053340B2Method for fabricating semiconductor devices with reduced junction diffusionUNIV SINGAPORE·Filed 2007·Granted Nov 8, 2011·97 cites·26 claims
- 0296US9853129B2Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growthAPPLIED MATERIALS INC·Filed 2016·Granted Dec 26, 2017·18 cites·14 claims
- 0394US9460920B1Horizontal gate all around device isolationAPPLIED MATERIALS INC·Filed 2015·Granted Oct 4, 2016·15 cites·20 claims
- 0493US12027607B2Methods for GAA I/O formation by selective epi regrowthAPPLIED MATERIALS INC·Filed 2022·Granted Jul 2, 2024·2 cites·6 claims
- 0589US11393916B2Methods for GAA I/O formation by selective epi regrowthAPPLIED MATERIALS INC·Filed 2020·Granted Jul 19, 2022·2 cites·10 claims
- 0689US10861722B2Integrated semiconductor processingAPPLIED MATERIALS INC·Filed 2019·Granted Dec 8, 2020·6 cites·20 claims
- 0787US9865735B2Horizontal gate all around and FinFET device isolationAPPLIED MATERIALS INC·Filed 2016·Granted Jan 9, 2018·4 cites·14 claims
- 0887US9396902B2Gallium ION source and materials thereforeBILOIU COSTEL·Filed 2012·Granted Jul 19, 2016·9 cites·10 claims
- 0983US11145761B2Horizontal gate all around and FinFET device isolationAPPLIED MATERIALS INC·Filed 2019·Granted Oct 12, 2021·2 cites·17 claims
- 1081US8999800B2Method of reducing contact resistanceVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Apr 7, 2015·5 cites·20 claims
- 1178US10629752B1Gate all-around deviceAPPLIED MATERIALS INC·Filed 2018·Granted Apr 21, 2020·2 cites·14 claims
- 1278US8354321B2Method for fabricating semiconductor devices with reduced junction diffusionGLOBALFOUNDRIES SG PTE LTD·Filed 2011·Granted Jan 15, 2013·4 cites·20 claims
- 1377US2025351452A1Gate all around device with fully-depleted silicon-on-insulatorAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 1476US10573719B2Horizontal gate all around device isolationAPPLIED MATERIALS INC·Filed 2016·Granted Feb 25, 2020·2 cites·19 claims
- 1576US8722431B2FinFET device fabrication using thermal implantationPRADHAN NILAY ANIL·Filed 2012·Granted May 13, 2014·7 cites·20 claims
- 1675US12471322B2Horizontal GAA nano-wire and nano-slab transistorsAPPLIED MATERIALS INC·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 1775US11309404B2Integrated CMOS source drain formation with advanced controlAPPLIED MATERIALS INC·Filed 2019·Granted Apr 19, 2022·1 cites·14 claims
- 1875US10381465B2Method for fabricating asymmetrical three dimensional deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Aug 13, 2019·2 cites·11 claims
- 1974US12261047B2Doping techniquesAPPLIED MATERIALS INC·Filed 2022·Granted Mar 25, 2025·0 cites·16 claims
- 2074US10347462B2Imaging of crystalline defectsAPPLIED MATERIALS ISRAEL LTD·Filed 2018·Granted Jul 9, 2019·2 cites·20 claims
- 2174US9455196B2Method for improving fin isolationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Sep 27, 2016·2 cites·18 claims
- 2273US2025266295A1Void-free contact trench fill in gate-all-around fet archtectureAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2372US10490666B2Horizontal gate all around and FinFET device isolationAPPLIED MATERIALS INC·Filed 2017·Granted Nov 26, 2019·1 cites·17 claims
- 2469US12062708B2Selective silicon etch for gate all around transistorsAPPLIED MATERIALS INC·Filed 2022·Granted Aug 13, 2024·0 cites·10 claims
- 2569US11508828B2Selective silicon etch for gate all around transistorsAPPLIED MATERIALS INC·Filed 2021·Granted Nov 22, 2022·0 cites·14 claims
- 2669US2022199804A1Integrated CMOS Source Drain Formation With Advanced ControlAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2769US2023178419A1Scaled liner layer for isolation structureAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2868US11923441B2Gate all around I/O engineeringAPPLIED MATERIALS INC·Filed 2022·Granted Mar 5, 2024·0 cites·15 claims
- 2967US8860142B2Method and apparatus to reduce thermal variations within an integrated circuit die using thermal proximity correctionGLOBALFOUNDRIES SG PTE LTD·Filed 2012·Granted Oct 14, 2014·2 cites·20 claims
- 3067US8012843B2Optimized halo or pocket cold implantsVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2010·Granted Sep 6, 2011·2 cites·19 claims
- 3166US12327761B2Void-free contact trench fill in gate-all-around FET architectureAPPLIED MATERIALS INC·Filed 2022·Granted Jun 10, 2025·0 cites·13 claims
- 3266US11450759B2Gate all around I/O engineeringAPPLIED MATERIALS INC·Filed 2020·Granted Sep 20, 2022·0 cites·19 claims
- 3366US2024234544A1Inner spacer liner for gate-all-around deviceAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3465US12402351B2Gate all around device with fully-depleted silicon-on-insulatorAPPLIED MATERIALS INC·Filed 2022·Granted Aug 26, 2025·0 cites·12 claims
- 3565US9748364B2Method for fabricating three dimensional deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Aug 29, 2017·1 cites·18 claims
- 3665US2025203942A1Formation Of Gate All Around DeviceAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 3764US12363948B2Formation of gate all around deviceAPPLIED MATERIALS INC·Filed 2021·Granted Jul 15, 2025·0 cites·30 claims
- 3864US11495500B2Horizontal GAA nano-wire and nano-slab transistorsAPPLIED MATERIALS INC·Filed 2020·Granted Nov 8, 2022·0 cites·19 claims
- 3964US2025338465A1Method and material system for backside power delivery network in static random-access memory devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4064US2023299199A1Stress incorporation in semiconductor devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4163US2025142957A1N-channel coupled with p-channel and methods of manufactureAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4263US2025239452A1Direct nitration for backside power deliver network isolation moduleAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4362US12183798B2Threshold voltage modulation for gate-all-around FET architectureAPPLIED MATERIALS INC·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 4462US11699755B2Stress incorporation in semiconductor devicesAPPLIED MATERIALS INC·Filed 2020·Granted Jul 11, 2023·0 cites·14 claims
- 4562US11456178B2Gate interface engineering with doped layerAPPLIED MATERIALS INC·Filed 2021·Granted Sep 27, 2022·0 cites·20 claims
- 4662US11443948B2Doping techniquesAPPLIED MATERIALS INC·Filed 2019·Granted Sep 13, 2022·0 cites·19 claims
- 4761US2025113577A1Semiconductor airgap spacer and fabrication methodsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4861US2025040170A1Isolation module for backside power deliveryAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4961US2024321584A1Selective oxidation processes for gate-all-around transistorsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 5061US2020161171A1Scaled liner layer for isolation structureAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →