Inventor · disambiguated record
Belford T. Coursey
Also filed as: COURSEY BELFORD T
21 granted patents·1 pending application·332 citations·filing 2000–2015
95Inventor score
Top patents by PatentIndex Score
22 records- 0195US6617222B1Selective hemispherical silicon grain (HSG) conversion inhibitor for use during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 9, 2003·101 cites·19 claims
- 0292US6287935B1Semiconductor processing methods of forming hemispherical grain polysilicon layers, methods of forming capacitors, and capacitorsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 11, 2001·59 cites·16 claims
- 0387US6232168B1Memory circuitry and method of forming memory circuitryMICRON TECHNOLOGY INC·Filed 2000·Granted May 15, 2001·28 cites·17 claims
- 0487US6121084ASemiconductor processing methods of forming hemispherical grain polysilicon layers, methods of forming capacitors, and capacitorsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 19, 2000·34 cites·28 claims
- 0585US7026678B2Dynamic random access memory circuitry having storage capacitors within a wellMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 11, 2006·23 cites·6 claims
- 0684US9076680B2Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the arrayBUSCH BRETT W·Filed 2011·Granted Jul 7, 2015·9 cites·40 claims
- 0784US6790725B2Double-sided capacitor structure for a semiconductor device and a method for forming the structureMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 14, 2004·31 cites·20 claims
- 0880US7355231B2Memory circuitry with oxygen diffusion barrier layer received over a well baseMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 8, 2008·5 cites·15 claims
- 0969US6426243B1Methods of forming dynamic random access memory circuitryMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 30, 2002·9 cites·8 claims
- 1068US7115970B2Capacitor for use in an integrated circuitMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 3, 2006·11 cites·27 claims
- 1165US6888217B2Capacitor for use in an integrated circuitMICRON TECHNOLOGY INC·Filed 2001·Granted May 3, 2005·10 cites·63 claims
- 1260US9147803B2Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methodsMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 29, 2015·1 cites·18 claims
- 1358US6893958B2Methods for preventing cross-linking between multiple resists and patterning multiple resistsMICRON TECHNOLOGY INC·Filed 2002·Granted May 17, 2005·4 cites·49 claims
- 1455US6974993B2Double-sided capacitor structure for a semiconductor device and a method for forming the structureMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 13, 2005·5 cites·12 claims
- 1553US7211855B2Intermediate semiconductor device structure including multiple photoresist layersMICRON TECHNOLOGY INC·Filed 2006·Granted May 1, 2007·0 cites·25 claims
- 1652US7078760B2Intermediate semiconductor device structure including multiple photoresist layersMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 18, 2006·2 cites·27 claims
- 1745US9331236B2Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methodsMICRON TECHNOLOGY INC·Filed 2015·Granted May 3, 2016·0 cites·24 claims
- 1845US2016027863A1Integrated Circuitry, Methods of Forming Capacitors, and Methods of Forming Integrated Circuitry Comprising an Array of Capacitors and Circuitry Peripheral to the ArrayMICRON TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 1940US7148536B2Memory circuitry and method of forming memory circuitryMICRON TECHNOLOGY INC·Filed 2003·Granted Dec 12, 2006·0 cites·19 claims
- 2039US7087949B2Selective hemispherical silicon grain (HSG) conversion inhibitor for use during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 8, 2006·0 cites·14 claims
- 2139US6830972B2Method of forming memory circuitryMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 14, 2004·0 cites·20 claims
- 2238US7105884B2Memory circuitry with plurality of capacitors received within an insulative layer wellMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 12, 2006·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →