Integrated Circuitry, Methods of Forming Capacitors, and Methods of Forming Integrated Circuitry Comprising an Array of Capacitors and Circuitry Peripheral to the Array

Abstract

A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.

1 . Integrated circuitry including a plurality of electronic devices which individually comprise a pair of conductive electrodes having dielectric there-between, comprising:
 a substrate comprising support material there-over, the support material being at least one of semiconductive or conductive;   electronic device openings extending into the support material, the electronic device openings comprising at least one of semiconductive or conductive sidewalls;   an insulator along the semiconductive and/or conductive electronic device opening sidewalls; and   individual electronic devices within individual of the electronic device openings laterally inward of the insulator that is along the semiconductive and/or conductive electronic device opening sidewalls, the electronic devices individually comprising a pair of conductive electrodes having dielectric there-between, one of the pair of conductive electrodes within the respective electronic device openings being laterally adjacent the deposited insulator.   
     
     
         2 . The integrated circuitry of  claim 1  wherein the individual electronic devices comprise capacitors. 
     
     
         3 . The integrated circuitry of  claim 1  wherein the individual electronic devices comprise antifuses. 
     
     
         4 . The integrated circuitry of  claim 1  wherein the insulator is directly against the semiconductive and/or conductive electronic device opening sidewalls. 
     
     
         5 . The integrated circuitry of  claim 1  wherein the insulator is directly against the one of the pair of conductive electrodes. 
     
     
         6 . The integrated circuitry of  claim 1  wherein the individual electronic devices comprise capacitors, and the integrated circuitry further comprising:
 contact openings extending into the support material, the contact openings comprising at least one of semiconductive or conductive sidewalls; 
 an insulator along the semiconductive and/or conductive contact opening sidewalls; and 
 a conductive contact within the respective contact openings laterally inward of the insulator in the contact openings. 
 
     
     
         7 . The integrated circuitry of  claim 1  wherein the individual electronic devices comprise antifuses, and the integrated circuitry further comprising:
 contact openings extending into the support material, the contact openings comprising at least one of semiconductive or conductive sidewalls; 
 an insulator along the semiconductive and/or conductive contact opening sidewalls; and 
 a conductive contact within the respective contact openings laterally inward of the insulator in the contact openings. 
 
     
     
         8 . The integrated circuitry of  claim 1  wherein some of the individual electronic devices comprise capacitors and another some of the individual electronic devices comprise antifuses. 
     
     
         9 . The integrated circuitry of  claim 1  wherein some of the individual electronic devices comprise capacitors and another some of the individual electronic devices comprise antifuses, and the integrated circuitry further comprising:
 contact openings extending into the support material, the contact openings comprising at least one of semiconductive or conductive sidewalls; 
 an insulator along the semiconductive and/or conductive contact opening sidewalls; and 
 a conductive contact within the respective contact openings laterally inward of the insulator in the contact openings. 
 
     
     
         10 . Integrated circuitry comprising:
 a substrate comprising support material there-over;   openings extending vertically into the support material, the openings comprising sidewalls that are least one of semiconductive or conductive sidewalls;   an insulator along the semiconductive and/or conductive electronic device opening sidewalls;   first capacitor electrode material within the openings laterally adjacent to the insulator;   capacitor dielectric material over the first capacitor electrode material within the openings; and   second capacitor electrode material within the openings, the insulator being absent between the first and second capacitor electrode materials within the openings.   
     
     
         11 . The circuitry of  claim 10  wherein the sidewalls are semiconductive. 
     
     
         12 . The circuitry of  claim 10  wherein the sidewalls are conductive. 
     
     
         13 . The circuitry of  claim 10  wherein the support material comprises amorphous silicon. 
     
     
         14 . The circuitry of  claim 10  wherein the support material comprises monocrystalline silicon. 
     
     
         15 . The circuitry of  claim 10  wherein the support material comprises polycrystalline silicon. 
     
     
         16 . The circuitry of  claim 10  wherein the openings extend completely through the support material. 
     
     
         17 . Integrated circuitry comprising:
 a support material over a substrate within a capacitor array area of the substrate and within a peripheral circuitry area of the substrate;   a first plurality of openings extending vertically into the support material within the capacitor array area;   an insulator within the first plurality of openings against opening sidewalls that comprise at least one of semiconductive material and conductive material;   first electrode material within the first plurality of openings laterally adjacent the insulator;   second electrode material within the first plurality of openings, the insulator being absent between the first and second electrode materials; and   a second plurality of openings extending into the support material within the peripheral circuitry area.   
     
     
         18 . The circuitry of  claim 17  further comprising dielectric isolation laterally separating the capacitor array area and the peripheral circuitry area, the dielectric isolation extending through an elevational thickness of the support material. 
     
     
         19 . The circuitry of  claim 17  wherein the second plurality of openings contain an insulative material and a conductive contact disposed radially inward of the insulative material comprising. 
     
     
         20 . The circuitry of  claim 17  wherein the second plurality of openings contain the insulator, the first electrode material and the second electrode material, the insulator material being absent between the first electrode material and the second electrode material within the second plurality of openings. 
     
     
         21 . The circuitry of  claim 20  further comprising dielectric material between the first electrode material and the second electrode material within the first and second plurality of openings.