Inventor · disambiguated record
Benjamin G. Moser
Also filed as: MOSER BENJAMIN · MOSER BENJAMIN G
8 granted patents·3 pending applications·21 citations·filing 2004–2016
81Inventor score
Top patents by PatentIndex Score
11 records- 0188US9875939B1Methods of forming uniform and pitch independent fin recessGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 23, 2018·5 cites·20 claims
- 0286US9685334B1Methods of forming semiconductor fin with carbon dopant for diffusion controlGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 20, 2017·6 cites·19 claims
- 0383US9583397B1Source/drain terminal contact and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 28, 2017·5 cites·16 claims
- 0464US7696021B2Semiconductor device manufactured using a non-contact implant metrologyTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 13, 2010·2 cites·15 claims
- 0549US7253072B2Implant optimization schemeTEXAS INSTRUMENTS INC·Filed 2004·Granted Aug 7, 2007·3 cites·22 claims
- 0647US10020260B1Corrosion and/or etch protection layer for contacts and interconnect metallization integrationGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 10, 2018·0 cites·18 claims
- 0747US2007257211A1Implant Optimization SchemeTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 0845US2010155408A1Tank ventilation systemPORSCHE AG·Filed 2009·Application pending·0 cites
- 0940US10263065B2Metal resistor forming method using ion implantationGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 16, 2019·0 cites·20 claims
- 1039US2009166564A1Methods for monitoring implanter performanceMOSER BENJAMIN G·Filed 2007·Application pending·0 cites
- 1138US9748235B2Gate stack for integrated circuit structure and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 29, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →