Inventor · disambiguated record
Benjamin Vincent
Also filed as: VINCENT BENJAMIN · VINCENT BENJAMIN JOSEF
18 granted patents·3 pending applications·61 citations·filing 2008–2025
92Inventor score
Files withIMEC8VINCENT BENJAMIN6COVENTOR INC2COMMISSARIAT ENERGIE ATOMIQUE1DAMLENCOURT JEAN-FRANÇOIS1
Top patents by PatentIndex Score
21 records- 0196US11158368B2Static random-access memory cell designCOVENTOR INC·Filed 2020·Granted Oct 26, 2021·5 cites·17 claims
- 0292US9171904B2FinFET device with dual-strained channels and method for manufacturing thereofIMEC·Filed 2013·Granted Oct 27, 2015·13 cites·13 claims
- 0388US9117777B2Methods for manufacturing semiconductor devicesIMEC·Filed 2013·Granted Aug 25, 2015·10 cites·17 claims
- 0487US9476143B2Methods using mask structures for substantially defect-free epitaxial growthIMEC·Filed 2013·Granted Oct 25, 2016·7 cites·16 claims
- 0587US9029217B1Band engineered semiconductor device and method for manufacturing thereofIMEC·Filed 2015·Granted May 12, 2015·5 cites·8 claims
- 0686US9368498B2FinFET device with dual-strained channels and method for manufacturing thereofIMEC VZW·Filed 2015·Granted Jun 14, 2016·4 cites·12 claims
- 0773US9040391B2Process for producing localised GeOI structures, obtained by germanium condensationDAMLENCOURT JEAN-FRANÇOIS·Filed 2009·Granted May 26, 2015·8 cites·5 claims
- 0871US9263528B2Method for producing strained Ge fin structuresIMEC·Filed 2013·Granted Feb 16, 2016·3 cites·20 claims
- 0969US9831374B2Photodetector with tapered waveguide structureINTEL CORP·Filed 2013·Granted Nov 28, 2017·2 cites·11 claims
- 1066US8963225B2Band engineered semiconductor device and method for manufacturing thereofIMEC·Filed 2013·Granted Feb 24, 2015·1 cites·13 claims
- 1162US2025271017A1Strip of fasteners and fastening systemILLINOIS TOOL WORKS·Filed 2025·Application pending·0 cites
- 1257US8501596B2Method for fabricating a micro-electronic device equipped with semi-conductor zones on an insulator with a horizontal GE concentration gradientVINCENT BENJAMIN·Filed 2009·Granted Aug 6, 2013·1 cites·12 claims
- 1357US7989327B2Manufacturing method for a semi-conductor on insulator substrate comprising a localised Ge enriched stepCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Aug 2, 2011·1 cites·13 claims
- 1455US8247313B2Method for preparing a germanium layer from a silicon-germanium-on-isolator substrateVINCENT BENJAMIN·Filed 2008·Granted Aug 21, 2012·1 cites·13 claims
- 1551US10340139B2Methods and mask structures for substantially defect-free epitaxial growthIMEC·Filed 2016·Granted Jul 2, 2019·0 cites·15 claims
- 1646US2025005221A1System and method for performing hole profile modeling in a virtual fabrication environmentCOVENTOR INC·Filed 2022·Application pending·0 cites
- 1744US8569801B2Three-dimensional CMOS circuit on two offset substrates and method for making sameVINCENT BENJAMIN·Filed 2009·Granted Oct 29, 2013·0 cites·8 claims
- 1843US9263263B2Method for selective growth of highly doped group IV—Sn semiconductor materialsIMEC·Filed 2013·Granted Feb 16, 2016·0 cites·20 claims
- 1942US8709918B2Method for selective deposition of a semiconductor materialVINCENT BENJAMIN·Filed 2012·Granted Apr 29, 2014·0 cites·20 claims
- 2038US2014020619A1Method for Growing a Monocrystalline Tin-Containing Semiconductor MaterialVINCENT BENJAMIN·Filed 2012·Application pending·0 cites
- 2136US8530339B2Method for direct deposition of a germanium layerVINCENT BENJAMIN·Filed 2012·Granted Sep 10, 2013·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →