Method for Growing a Monocrystalline Tin-Containing Semiconductor Material

Abstract

Disclosed are methods for growing Sn-containing semiconductor materials. In some embodiments, an example method includes providing a substrate in a chemical vapor deposition (CVD) reactor, and providing a semiconductor material precursor, a Sn precursor, and a carrier gas in the CVD reactor. The method further includes epitaxially growing a Sn-containing semiconductor material on the substrate, where the Sn precursor comprises tin tetrachloride (SnCl 4 ). The semiconductor material precursor may be, for example, digermane, trigermane, higher-order germanium precursors, or a combination thereof. Alternatively, the semiconductor material precursor may be a silicon precursor.

1 - 18 . (canceled) 
     
     
         19 . A method comprising:
 providing a substrate in a chemical vapor deposition (CVD) reactor;   providing a semiconductor material precursor, a Sn precursor, and a carrier gas in the CVD reactor; and   epitaxially growing a Sn-containing semiconductor material on the substrate, wherein the Sn precursor comprises tin tetrachloride (SnCl 4 ).   
     
     
         20 . The method of  claim 19 , wherein:
 an etching threshold of the substrate comprises a threshold partial pressure of the Sn precursor at which the Sn precursor in combination with the semiconductor material precursor in the CVD reactor begins to etch an upper layer of the substrate; and   providing the Sn precursor comprises providing the Sn precursor at a partial pressure lower than the threshold partial pressure.   
     
     
         21 . The method of  claim 19 , wherein:
 providing the Sn precursor comprises providing the Sn precursor at a partial pressure; and   providing the Sn precursor at the partial pressure comprises (i) selecting a total pressure in the CVD reactor and (ii) adjusting the partial pressure by modifying at least one of a flow of the semiconductor material precursor, a flow of the Sn precursor, and a flow of the carrier gas.   
     
     
         22 . The method of  claim 19 , wherein providing the semiconductor material precursor, the Sn precursor, and the carrier gas in the CVD reactor comprises providing the semiconductor material precursor, the Sn precursor, and the carrier gas at a total pressure in the CVD reactor, wherein the total pressure is less than or equal to atmospheric pressure. 
     
     
         23 . The method of  claim 19 , wherein the semiconductor material precursor comprises at least one of digermane, trigermane, and higher-order germanium precursor. 
     
     
         24 . The method of  claim 19 , wherein the semiconductor material precursor comprises Ge 2 H 6 . 
     
     
         25 . The method of  claim 24 , wherein a ratio of SnCl 4  to Ge 2 H 6  is less than or equal to 0.2. 
     
     
         26 . The method of  claim 24 , wherein:
 a total pressure in the CVD reactor is less than atmospheric pressure; and   a ratio of SnCl 4  to Ge 2 H 6  is approximately 1.   
     
     
         27 . The method of  claim 19 , wherein the semiconductor precursor comprises a silicon precursor. 
     
     
         28 . The method of  claim 19 , wherein epitaxially growing the Sn-containing semiconductor material comprises epitaxially growing the Sn-containing semiconductor material at a temperature between about 250° C. and 350° C. 
     
     
         29 . The method of  claim 19 , further comprising, while or after epitaxially growing the Sn-containing semiconductor material, introducing dopants in the Sn-containing semiconductor material. 
     
     
         30 . The method of  claim 19 , wherein:
 the substrate comprises a buffer layer; and   epitaxially growing the Sn-containing semiconductor material comprises epitaxially growing the Sn-containing semiconductor material on the buffer layer.   
     
     
         31 . The method of  claim 19 , wherein the Sn-containing semiconductor material is substantially incorporated in the semiconductor material. 
     
     
         32 . A method comprising:
 providing a substrate in a chemical vapor deposition (CVD) reactor;   providing a semiconductor material precursor, a Sn precursor, and a carrier gas in the CVD reactor; and   epitaxially growing a stack on the substrate, wherein the stack comprises at least one Sn-containing semiconductor material, and the Sn precursor comprises tin tetrachloride (SnCl 4 ).   
     
     
         33 . The method of  claim 32 , wherein the Sn-containing semiconductor material comprises a monocrystalline semiconductor material. 
     
     
         34 . The method of  claim 32 , further comprising, while or after epitaxially growing the stack, introducing dopants in the Sn-containing semiconductor material. 
     
     
         35 . The method of  claim 32 , wherein:
 the substrate comprises a buffer layer; and   epitaxially growing the stack comprises epitaxially growing the Sn-containing semiconductor material on the buffer layer.   
     
     
         36 . The method of  claim 35 , wherein:
 the buffer layer comprises Ge; and   the Sn-containing semiconductor material comprises GeSn.   
     
     
         37 . The method of  claim 32 , wherein the semiconductor material precursor comprises at least one of digermane, trigermane, and higher-order germanium precursor. 
     
     
         38 . The method of  claim 32 , wherein the semiconductor precursor comprises a silicon precursor.