Inventor · disambiguated record
Bhargav S. Citla
Also filed as: CITLA BHARGAV · CITLA BHARGAV S · CITLA BHARGAV SRIDHAR
20 granted patents·12 pending applications·134 citations·filing 2016–2025
91Inventor score
Files withAPPLIED MATERIALS INC32
Top patents by PatentIndex Score
32 records- 0198US9865484B1Selective etch using material modification and RF pulsingAPPLIED MATERIALS INC·Filed 2016·Granted Jan 9, 2018·109 cites·14 claims
- 0296US10950429B2Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefromAPPLIED MATERIALS INC·Filed 2019·Granted Mar 16, 2021·14 cites·17 claims
- 0388US11566325B2Silicon carbonitride gapfill with tunable carbon contentAPPLIED MATERIALS INC·Filed 2020·Granted Jan 31, 2023·1 cites·16 claims
- 0486US9640385B2Gate electrode material residual removal processAPPLIED MATERIALS INC·Filed 2016·Granted May 2, 2017·4 cites·19 claims
- 0585US11862458B2Directional selective depositionAPPLIED MATERIALS INC·Filed 2021·Granted Jan 2, 2024·1 cites·20 claims
- 0685US11114306B2Methods for depositing dielectric materialAPPLIED MATERIALS INC·Filed 2018·Granted Sep 7, 2021·3 cites·17 claims
- 0785US11049537B2Additive patterning of semiconductor film stacksAPPLIED MATERIALS INC·Filed 2019·Granted Jun 29, 2021·2 cites·14 claims
- 0877US12347674B2Directional selective depositionAPPLIED MATERIALS INC·Filed 2023·Granted Jul 1, 2025·0 cites·12 claims
- 0975US2023066497A1Silicon carbonitride gapfill with tunable carbon contentAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1070US12476105B2Directional selective fill for silicon gap fill processesAPPLIED MATERIALS INC·Filed 2023·Granted Nov 18, 2025·0 cites·21 claims
- 1170US11581183B2Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefromAPPLIED MATERIALS INC·Filed 2021·Granted Feb 14, 2023·0 cites·18 claims
- 1268US11631591B2Methods for depositing dielectric materialAPPLIED MATERIALS INC·Filed 2021·Granted Apr 18, 2023·0 cites·20 claims
- 1366US11798606B2Additive patterning of semiconductor film stacksAPPLIED MATERIALS INC·Filed 2021·Granted Oct 24, 2023·0 cites·6 claims
- 1459US2025137119A1Deposition of carbon gapfill materialsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1559US2025253156A1Deposition and etching for selective removal of deposited dielectric film from tops of finsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1658US12315718B2Forming films with improved film qualityAPPLIED MATERIALS INC·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 1757US2025022704A1Directional selective fill of silicon oxide materialsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1856US12057329B2Selective etch using material modification and RF pulsingAPPLIED MATERIALS INC·Filed 2017·Granted Aug 6, 2024·0 cites·10 claims
- 1956US2024234131A1Directional selective fill using high density plasmaAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2056US2025253148A1Trench and channel gap fill tuning for flowable chemical vapor deposition (fcvd) filmsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2152US12482652B2Method for forming integrated circuit structuresAPPLIED MATERIALS INC·Filed 2020·Granted Nov 25, 2025·0 cites·15 claims
- 2252US2024331975A1Densified seam-free silicon gap fill processesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2352US2025254969A1Control of silicon nitride topology at trench bottomAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2451US11955333B2Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2021·Granted Apr 9, 2024·0 cites·18 claims
- 2551US2023386829A1Low temperature silicon oxide gap fillAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2649US11049731B2Methods for film modificationAPPLIED MATERIALS INC·Filed 2019·Granted Jun 29, 2021·0 cites·20 claims
- 2749US2019088457A1Sync controller for high impulse magnetron sputteringAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 2846US10570506B2Method to improve film quality for PVD carbon with reactive gas and bias powerAPPLIED MATERIALS INC·Filed 2017·Granted Feb 25, 2020·0 cites·13 claims
- 2946US2022298636A1Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 3042US11972943B2Methods and apparatus for depositing dielectric materialAPPLIED MATERIALS INC·Filed 2019·Granted Apr 30, 2024·0 cites·20 claims
- 3138US10858727B2High density, low stress amorphous carbon film, and process and equipment for its depositionAPPLIED MATERIALS INC·Filed 2017·Granted Dec 8, 2020·0 cites·9 claims
- 3235US2019127842A1Pulsed dc source for high power impulse magnetron sputtering physical vapor deposition of dielectric films and methods of applicationAPPLIED MATERIALS INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →