Inventor · disambiguated record
Bhagwati Prasad
Also filed as: PRASAD BHAGWATI
33 granted patents·117 citations·filing 2019–2022
96Inventor score
Top patents by PatentIndex Score
33 records- 0198US11217289B1Spinel containing magnetic tunnel junction and method of making the sameWESTERN DIGITAL TECH INC·Filed 2020·Granted Jan 4, 2022·7 cites·20 claims
- 0298US11176981B1Spinel containing magnetic tunnel junction and method of making the sameWESTERN DIGITAL TECH INC·Filed 2020·Granted Nov 16, 2021·7 cites·20 claims
- 0398US11152048B1Tunneling metamagnetic resistance memory device and methods of operating the sameWESTERN DIGITAL TECH INC·Filed 2020·Granted Oct 19, 2021·6 cites·19 claims
- 0497US10957711B2Ferroelectric device with multiple polarization states and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 23, 2021·6 cites·19 claims
- 0596US11889702B2Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the sameWESTERN DIGITAL TECH INC·Filed 2021·Granted Jan 30, 2024·3 cites·20 claims
- 0696US11871679B2Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the sameWESTERN DIGITAL TECH INC·Filed 2021·Granted Jan 9, 2024·3 cites·20 claims
- 0796US11839162B2Magnetoresistive memory device including a plurality of reference layersWESTERN DIGITAL TECH INC·Filed 2021·Granted Dec 5, 2023·3 cites·9 claims
- 0896US11417379B2Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 16, 2022·7 cites·20 claims
- 0996US11361805B2Magnetoresistive memory device including a reference layer side dielectric spacer layerWESTERN DIGITAL TECH INC·Filed 2021·Granted Jun 14, 2022·3 cites·20 claims
- 1096US11005034B1Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the sameWESTERN DIGITAL TECH INC·Filed 2019·Granted May 11, 2021·16 cites·12 claims
- 1196US10991407B1Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the sameWESTERN DIGITAL TECH INC·Filed 2019·Granted Apr 27, 2021·13 cites·19 claims
- 1295US11411170B2Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 9, 2022·3 cites·4 claims
- 1395US11349066B2Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 31, 2022·3 cites·20 claims
- 1495US11056640B2Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the sameWESTERN DIGITAL TECH INC·Filed 2019·Granted Jul 6, 2021·11 cites·20 claims
- 1594US11200934B2Tunneling metamagnetic resistance memory device and methods of operating the sameWESTERN DIGITAL TECH INC·Filed 2020·Granted Dec 14, 2021·3 cites·19 claims
- 1693US10964748B1Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the sameWESTERN DIGITAL TECH INC·Filed 2019·Granted Mar 30, 2021·5 cites·20 claims
- 1791US12225828B2Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layerSANDISK TECHNOLOGIES INC·Filed 2022·Granted Feb 11, 2025·1 cites·20 claims
- 1891US11430813B2Antiferroelectric memory devices and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 30, 2022·2 cites·19 claims
- 1991US11264562B1Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the sameWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 1, 2022·2 cites·19 claims
- 2090US11996462B2Ferroelectric field effect transistors having enhanced memory window and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 28, 2024·2 cites·5 claims
- 2190US11049538B2Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereofWESTERN DIGITAL TECH INC·Filed 2020·Granted Jun 29, 2021·3 cites·17 claims
- 2289US11404193B2Magnetoresistive memory device including a magnesium containing dust layerWESTERN DIGITAL TECH INC·Filed 2021·Granted Aug 2, 2022·1 cites·21 claims
- 2388US11069741B2Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the sameWESTERN DIGITAL TECH INC·Filed 2019·Granted Jul 20, 2021·3 cites·18 claims
- 2487US11887640B2Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the sameWESTERN DIGITAL TECH INC·Filed 2021·Granted Jan 30, 2024·1 cites·20 claims
- 2586US11502104B2Antiferroelectric memory devices and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 15, 2022·2 cites·6 claims
- 2680US11222920B2Magnetic device including multiferroic regions and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2020·Granted Jan 11, 2022·1 cites·20 claims
- 2760US12363905B2Memory device containing composition-controlled ferroelectric memory elements and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 15, 2025·0 cites·10 claims
- 2859US12356627B2Memory device containing composition-controlled ferroelectric memory elements and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 8, 2025·0 cites·22 claims
- 2956US11276446B1Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the sameWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 15, 2022·0 cites·20 claims
- 3054US11545506B2Ferroelectric field effect transistors having enhanced memory window and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 3152US11087791B1Data storage device with voltage-assisted magnetic recording (VAMR) for high density magnetic recordingWESTERN DIGITAL TECH INC·Filed 2020·Granted Aug 10, 2021·0 cites·24 claims
- 3248US11404632B2Magnetoresistive memory device including a magnesium containing dust layerWESTERN DIGITAL TECH INC·Filed 2021·Granted Aug 2, 2022·0 cites·18 claims
- 3347US11443790B2Spinel containing magnetic tunnel junction and method of making the sameWESTERN DIGITAL TECH INC·Filed 2021·Granted Sep 13, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →