Inventor · disambiguated record
Binghua Hu
Also filed as: HU BINGHUA
90 granted patents·11 pending applications·320 citations·filing 2001–2025
99Inventor score
Files withTEXAS INSTRUMENTS INC83SHENZHEN GREPOW BATTERY CO LTD4PENDHARKAR SAMEER P3DENISON MARIE2HU BINGHUA2
Top patents by PatentIndex Score
101 records- 0198US9583612B1Drift region implant self-aligned to field relief oxide with sidewall dielectricTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 28, 2017·23 cites·8 claims
- 0296US10163680B1Sinker to buried layer connection region for narrow deep trenchesTEXAS INSTRUMENTS INC·Filed 2017·Granted Dec 25, 2018·16 cites·20 claims
- 0396US9887288B2LDMOS device with body diffusion self-aligned to gateTEXAS INSTRUMENTS INC·Filed 2015·Granted Feb 6, 2018·15 cites·20 claims
- 0495US10461182B1Drain centered LDMOS transistor with integrated dummy patternsTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 29, 2019·16 cites·21 claims
- 0594US11195958B2Semiconductor device with deep trench isolation and trench capacitorTEXAS INSTRUMENTS INC·Filed 2020·Granted Dec 7, 2021·3 cites·17 claims
- 0693US9929140B2Isolation structure for IC with EPI regions sharing the same tankTEXAS INSTRUMENTS INC·Filed 2015·Granted Mar 27, 2018·7 cites·20 claims
- 0793US8253193B2MOS transistor with gate trench adjacent to drain extension field insulationDENISON MARIE·Filed 2011·Granted Aug 28, 2012·14 cites·6 claims
- 0891US9786665B1Dual deep trenches for high voltage isolationTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 10, 2017·7 cites·23 claims
- 0991US7745294B2Methods of manufacturing trench isolated drain extended MOS (demos) transistors and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2008·Granted Jun 29, 2010·19 cites·19 claims
- 1090US9608105B2Semiconductor structure with a doped region between two deep trench isolation structuresTEXAS INSTRUMENTS INC·Filed 2015·Granted Mar 28, 2017·8 cites·5 claims
- 1189US10811543B2Semiconductor device with deep trench isolation and trench capacitorTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 20, 2020·6 cites·10 claims
- 1289US8264038B2Buried floating layer structure for improved breakdownPENDHARKAR SAMEER P·Filed 2009·Granted Sep 11, 2012·20 cites·23 claims
- 1389US8124482B2MOS transistor with gate trench adjacent to drain extension field insulationDENISON MARIE·Filed 2011·Granted Feb 28, 2012·9 cites·7 claims
- 1489US7732863B2Laterally diffused MOSFETTEXAS INSTRUMENTS INC·Filed 2008·Granted Jun 8, 2010·10 cites·6 claims
- 1588US11222986B2Semiconductor device with an integrated deep trench capacitor having high capacitance density and low equivalent series resistanceTEXAS INSTRUMENTS INC·Filed 2020·Granted Jan 11, 2022·2 cites·20 claims
- 1686US9431286B1Deep trench with self-aligned sinkerTEXAS INSTRUMENTS INC·Filed 2014·Granted Aug 30, 2016·8 cites·7 claims
- 1785US10790275B2ESD protection device with deep trench isolation islandsTEXAS INSTRUMENTS INC·Filed 2018·Granted Sep 29, 2020·3 cites·23 claims
- 1885US10461072B2Isolation structure for IC with epi regions sharing the same tankTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 29, 2019·2 cites·20 claims
- 1985US9076863B2Semiconductor structure with a doped region between two deep trench isolation structuresTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 7, 2015·7 cites·13 claims
- 2085US7713825B2LDMOS transistor double diffused region formation processTEXAS INSTRUMENTS INC·Filed 2007·Granted May 11, 2010·11 cites·13 claims
- 2183US7772075B2Formation of a MOSFET using an angled implantTEXAS INSTRUMENTS INC·Filed 2009·Granted Aug 10, 2010·6 cites·14 claims
- 2283US7772644B2Vertical diffused MOSFETTEXAS INSTRUMENTS INC·Filed 2009·Granted Aug 10, 2010·6 cites·3 claims
- 2383US7696049B2Method to manufacture LDMOS transistors with improved threshold voltage controlTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 13, 2010·8 cites·20 claims
- 2482US12205944B2Isolation structure for IC with epi regions sharing the same tankTEXAS INSTRUMENTS INC·Filed 2022·Granted Jan 21, 2025·0 cites·19 claims
- 2582US10497787B2Drift region implant self-aligned to field relief oxide with sidewall dielectricTEXAS INSTRUMENTS INC·Filed 2017·Granted Dec 3, 2019·2 cites·20 claims
- 2682US9741718B2High voltage CMOS with triple gate oxideTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 22, 2017·3 cites·8 claims
- 2781US9401410B2Poly sandwich for deep trench fillTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 26, 2016·3 cites·13 claims
- 2881US2025318160A1Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection deviceTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 2980US11101342B1Deep trench intersectionsTEXAS INSTRUMENTS INC·Filed 2020·Granted Aug 24, 2021·1 cites·23 claims
- 3080US10903356B2LDMOS device with body diffusion self-aligned to gateTEXAS INSTRUMENTS INC·Filed 2018·Granted Jan 26, 2021·2 cites·40 claims
- 3180US7893499B2MOS transistor with gate trench adjacent to drain extension field insulationTEXAS INSTRUMENTS INC·Filed 2009·Granted Feb 22, 2011·6 cites·6 claims
- 3279US12363926B2Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection deviceTEXAS INSTRUMENTS INC·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 3379US10290699B2Method for forming trench capacitor having two dielectric layers and two polysilicon layersTEXAS INSTRUMENTS INC·Filed 2016·Granted May 14, 2019·2 cites·15 claims
- 3479US9633849B2Implant profiling with resistTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 25, 2017·2 cites·9 claims
- 3579US9337106B2Implant profiling with resistTEXAS INSTRUMENTS INC·Filed 2014·Granted May 10, 2016·3 cites·19 claims
- 3679US2025133780A1Deep trench intersectionsTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3779US2025169193A1Isolation structure for ic with epi regions sharing the same tankTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 3878US7989232B2Method of using electrical test structure for semiconductor trench depth monitorTEXAS INSTRUMENTS INC·Filed 2006·Granted Aug 2, 2011·6 cites·11 claims
- 3977US8530296B2High voltage transistor using diluted drainTEXAS INSTRUMENTS INC·Filed 2013·Granted Sep 10, 2013·3 cites·10 claims
- 4076US9076760B2JFET having width defined by trench isolationHU BINGHUA·Filed 2012·Granted Jul 7, 2015·4 cites·17 claims
- 4175US11152505B2Drain extended transistorTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 19, 2021·2 cites·24 claims
- 4273US10243048B2High dose antimony implant through screen layer for n-type buried layer integrationTEXAS INSTRUMENTS INC·Filed 2017·Granted Mar 26, 2019·2 cites·20 claims
- 4373US9865691B2Poly sandwich for deep trench fillTEXAS INSTRUMENTS INC·Filed 2017·Granted Jan 9, 2018·1 cites·13 claims
- 4472US7466009B2Method for reducing dislocation threading using a suppression implantTEXAS INSTRUMENTS INC·Filed 2006·Granted Dec 16, 2008·3 cites·11 claims
- 4572US7435659B2Method for manufacturing a semiconductor device having an alignment feature formed using an N-type dopant and a wet oxidation processTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 14, 2008·4 cites·15 claims
- 4671US10714474B2High voltage CMOS with triple gate oxideTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 14, 2020·1 cites·14 claims
- 4771US10134830B2Integrated trench capacitorTEXAS INSTRUMENTS INC·Filed 2016·Granted Nov 20, 2018·1 cites·13 claims
- 4871US7118959B2Integrated circuit capacitor having antireflective dielectricTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 10, 2006·5 cites·14 claims
- 4970US11869986B2Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection deviceTEXAS INSTRUMENTS INC·Filed 2021·Granted Jan 9, 2024·0 cites·21 claims
- 5070US7902033B2Methods and devices for a high-k stacked capacitorTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 8, 2011·4 cites·19 claims
Showing the top 50 of 101 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →