Inventor · disambiguated record
Bohsiang Tseng
Also filed as: TSENG BOHSIANG
1 granted patent·2 pending applications·1 citations·filing 2021–2023
16Inventor score
Technology areasH10P
Top patents by PatentIndex Score
3 records- 0173US11978627B2Substrate for epitaxial growth, method for manufacturing the same, semiconductor device including the same and method for manufacturing semiconductor deviceFUJIAN JING AN OPTOELECTRONICS CO LTD·Filed 2021·Granted May 7, 2024·1 cites·18 claims
- 0245US2023411152A1Substrate For Epitaxial Growth, Manufacturing Method of the Same, Semiconductor Device Including the Same and Manufacturing Method Using the SameFUJIAN JING AN OPTOELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0337US2022028698A1Method for making semiconductor substrate and method for making semiconductor deviceFUJIAN JINGAN OPTOELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →