Inventor · disambiguated record
Bruce Faure
Also filed as: FAURE BRUCE
35 granted patents·5 pending applications·278 citations·filing 2003–2019
97Inventor score
Top patents by PatentIndex Score
40 records- 0193US7839001B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2009·Granted Nov 23, 2010·15 cites·12 claims
- 0292US7601217B2Method of fabricating an epitaxially grown layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 13, 2009·23 cites·20 claims
- 0391US7981767B2Methods for relaxation and transfer of strained layers and structures fabricated therebySOITEC SILICON ON INSULATOR·Filed 2008·Granted Jul 19, 2011·14 cites·19 claims
- 0491US7538010B2Method of fabricating an epitaxially grown layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 26, 2009·8 cites·21 claims
- 0590US8093138B2Method of fabricating an epitaxially grown layerFAURE BRUCE·Filed 2009·Granted Jan 10, 2012·7 cites·20 claims
- 0690US7288430B2Method of fabricating heteroepitaxial microstructuresSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 30, 2007·15 cites·13 claims
- 0789US7939428B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2010·Granted May 10, 2011·7 cites·20 claims
- 0889US7670930B2Method of detaching a thin film by melting precipitatesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Mar 2, 2010·22 cites·32 claims
- 0989US7615468B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2007·Granted Nov 10, 2009·12 cites·25 claims
- 1089US7229898B2Methods for fabricating a germanium on insulator waferSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jun 12, 2007·19 cites·20 claims
- 1187US7646038B2Method of fabricating heteroepitaxial microstructuresSOITEC SILICON ON INSULATOR·Filed 2007·Granted Jan 12, 2010·11 cites·22 claims
- 1283US7736935B2Passivation of semiconductor structures having strained layersSOITEC SILICON ON INSULATOR·Filed 2008·Granted Jun 15, 2010·11 cites·15 claims
- 1383US7537949B2Optoelectronic substrate and methods of making sameSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 26, 2009·9 cites·19 claims
- 1482US8105916B2Relaxation and transfer of strained layersFAURE BRUCE·Filed 2009·Granted Jan 31, 2012·8 cites·15 claims
- 1580US6946317B2Method of fabricating heteroepitaxial microstructuresSOITEC SILICON ON INSULATOR·Filed 2003·Granted Sep 20, 2005·21 cites·14 claims
- 1678US9242444B2Method of fabricating a composite structure with a stable bonding layer of oxideSOITEC SILICON ON INSULATOR·Filed 2013·Granted Jan 26, 2016·5 cites·15 claims
- 1776US7375008B2Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereofSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 20, 2008·6 cites·27 claims
- 1876US7226509B2Method for fabricating a carrier substrateSOITEC SILICON ON INSULATOR·Filed 2003·Granted Jun 5, 2007·22 cites·28 claims
- 1972US8153500B2Method of fabricating an epitaxially grown layer on a composite structureFAURE BRUCE·Filed 2009·Granted Apr 10, 2012·7 cites·15 claims
- 2071US8541290B2Optoelectronic substrate and methods of making sameLETERTRE FABRICE·Filed 2011·Granted Sep 24, 2013·2 cites·17 claims
- 2171US7602046B2Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereofSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 13, 2009·4 cites·22 claims
- 2271US7261777B2Method for fabricating an epitaxial substrateSOITEC SILICON ON INSULATOR·Filed 2004·Granted Aug 28, 2007·17 cites·29 claims
- 2368US8492244B2Methods for relaxation and transfer of strained layers and structures fabricated therebyGUENARD PASCAL·Filed 2011·Granted Jul 23, 2013·2 cites·21 claims
- 2463US8486771B2Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including sameLETERTRE FABRICE·Filed 2009·Granted Jul 16, 2013·1 cites·25 claims
- 2563US8263984B2Process for making a GaN substrateFAURE BRUCE·Filed 2007·Granted Sep 11, 2012·1 cites·20 claims
- 2659US9011598B2Method for making a composite substrate and composite substrate according to the methodBOUSSAGOL ALICE·Filed 2006·Granted Apr 21, 2015·3 cites·9 claims
- 2759US8216368B2Method of fabricating an epitaxially grown layerFAURE BRUCE·Filed 2009·Granted Jul 10, 2012·1 cites·20 claims
- 2854US7135383B2Composite structure with high heat dissipationSOITEC SILICON ON INSULATOR·Filed 2004·Granted Nov 14, 2006·5 cites·20 claims
- 2954US2009200569A1Optoelectronic substrate and methods of making sameSOITEC SILICON ON INSULATOR·Filed 2009·Application pending·0 cites
- 3054US2009325362A1Method of recycling an epitaxied donor waferCHHAIMI NABIL·Filed 2009·Application pending·0 cites
- 3152US8564019B2Heterostructures comprising crystalline strain relaxation layersFAURE BRUCE·Filed 2011·Granted Oct 22, 2013·0 cites·11 claims
- 3252US8481407B2Processes for fabricating heterostructuresFAURE BRUCE·Filed 2011·Granted Jul 9, 2013·0 cites·20 claims
- 3349US8912081B2Stiffening layers for the relaxation of strained layersFAURE BRUCE·Filed 2009·Granted Dec 16, 2014·0 cites·16 claims
- 3449US7256473B2Composite structure with high heat dissipationSOITEC SILICON ON INSULATOR·Filed 2006·Granted Aug 14, 2007·0 cites·16 claims
- 3548US2010190000A1Method of fabricating a composite structure with a stable bonding layer of oxideSOITEC SILICON ON INSULATOR·Filed 2008·Application pending·0 cites
- 3647US2007141803A1Methods for making substrates and substrates formed therefromBOUSSAGOL ALICE·Filed 2006·Application pending·0 cites
- 3746US10401536B2Item coated with a silicon/organic layer improving the performances of an outer coatingESSILOR INT·Filed 2014·Granted Sep 3, 2019·0 cites·22 claims
- 3841US11867876B2Optical article having directional micro- or nanostructured thin film coating, and its processCORP DE LECOLE POLYTECHNIQUE DE MONTREAL·Filed 2019·Granted Jan 9, 2024·0 cites·20 claims
- 3941US9041165B2Relaxation and transfer of strained material layersLETERTRE FABRICE·Filed 2010·Granted May 26, 2015·0 cites·15 claims
- 4036US2005269671A1Support for hybrid epitaxy and method of fabricationFAURE BRUCE·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →