Inventor · disambiguated record

Bruno Ghyselen

Also filed as: GHYSELEN BRUNO

112 granted patents·30 pending applications·1,446 citations·filing 1992–2025

99Inventor score

Technology areasH10P H10W C30B B81C H10F

Files withSOITEC SILICON ON INSULATOR114 COMMISSARIAT ENERGIE ATOMIQUE9 GHYSELEN BRUNO3 LETERTRE FABRICE3 SAINT AUGUSTIN CANADA ELECTRIC INC2

Top patents by PatentIndex Score

142 records

0198US6867067B2Methods for fabricating final substratesSOITEC SILICON ON INSULATOR·Filed 2003·Granted Mar 15, 2005·172 cites·39 claims
0298US6794276B2Methods for fabricating a substrateSOITEC SILICON ON INSULATOR·Filed 2003·Granted Sep 21, 2004·175 cites·25 claims
0395US7534701B2Process for transferring a layer of strained semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2008·Granted May 19, 2009·24 cites·19 claims
0495US6955971B2Semiconductor structure and methods for fabricating sameSOITEC SILICON ON INSULATOR·Filed 2003·Granted Oct 18, 2005·92 cites·39 claims
0595US6858107B2Method of fabricating substrates, in particular for optics, electronics or optoelectronicsSOITEC SILICON ON INSULATOR·Filed 2003·Granted Feb 22, 2005·55 cites·23 claims
0694US7741678B2Semiconductor substrates having useful and transfer layersSOITEC SILICON ON INSULATOR·Filed 2008·Granted Jun 22, 2010·14 cites·20 claims
0793US7839001B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2009·Granted Nov 23, 2010·15 cites·12 claims
0893US7465991B2Semiconductor substrates having useful and transfer layersSOITEC SILICON ON INSULATOR·Filed 2006·Granted Dec 16, 2008·14 cites·19 claims
0993US7348260B2Method for forming a relaxed or pseudo-relaxed useful layer on a substrateSOITEC SILICON ON INSULATOR·Filed 2005·Granted Mar 25, 2008·21 cites·26 claims
1093US7018909B2Forming structures that include a relaxed or pseudo-relaxed layer on a substrateSOITEC SILICON ON INSULATOR·Filed 2004·Granted Mar 28, 2006·51 cites·31 claims
1193US6953736B2Process for transferring a layer of strained semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2003·Granted Oct 11, 2005·55 cites·26 claims
1292US6991956B2Methods for transferring a thin layer from a wafer having a buffer layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jan 31, 2006·23 cites·23 claims
1391US7655537B2Semiconductor substrates having useful and transfer layersSOITEC SILICON ON INSULATOR·Filed 2008·Granted Feb 2, 2010·10 cites·20 claims
1491US7407867B2Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrateSOITEC SILICON ON INSULATOR·Filed 2006·Granted Aug 5, 2008·19 cites·14 claims
1591US6991995B2Method of producing a semiconductor structure having at least one support substrate and an ultrathin layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Jan 31, 2006·54 cites·20 claims
1690US7422957B2Semiconductor substrates having useful and transfer layersSOITEC SILICON ON INSULATOR·Filed 2006·Granted Sep 9, 2008·9 cites·21 claims
1790US7288430B2Method of fabricating heteroepitaxial microstructuresSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 30, 2007·15 cites·13 claims
1889US7939428B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2010·Granted May 10, 2011·7 cites·20 claims
1989US7622330B2Semiconductor substrates having useful and transfer layersSOITEC SILICON ON INSULATOR·Filed 2008·Granted Nov 24, 2009·8 cites·14 claims
2089US7615468B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2007·Granted Nov 10, 2009·12 cites·25 claims
2189US7262113B2Methods for transferring a useful layer of silicon carbide to a receiving substrateSOITEC SILICON ON INSULATOR·Filed 2005·Granted Aug 28, 2007·12 cites·27 claims
2288US7902038B2Detachable substrate with controlled mechanical strength and method of producing sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Mar 8, 2011·50 cites·19 claims
2388US7256075B2Recycling of a wafer comprising a multi-layer structure after taking-off a thin layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Aug 14, 2007·20 cites·30 claims
2487US7736988B2Forming structures that include a relaxed or pseudo-relaxed layer on a substrateSOITEC SILICON ON INSULATOR·Filed 2006·Granted Jun 15, 2010·9 cites·10 claims
2587US7646038B2Method of fabricating heteroepitaxial microstructuresSOITEC SILICON ON INSULATOR·Filed 2007·Granted Jan 12, 2010·11 cites·22 claims
2687US7268060B2Method for fabricating a substrate with useful layer on high resistivity supportSOITEC SILICON ON INSULATOR·Filed 2004·Granted Sep 11, 2007·37 cites·14 claims
2787US7235462B2Methods for fabricating a substrateSOITEC SILICON ON INSULATOR·Filed 2004·Granted Jun 26, 2007·36 cites·22 claims
2887US6964914B2Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor materialSOITEC SILICON ON INSULATOR·Filed 2003·Granted Nov 15, 2005·44 cites·23 claims
2985US7071029B2Methods for fabricating final substratesSOITEC SILICON ON INSULATOR·Filed 2004·Granted Jul 4, 2006·18 cites·19 claims
3084US7888235B2Fabrication of substrates with a useful layer of monocrystalline semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2007·Granted Feb 15, 2011·7 cites·22 claims
3184US7407869B2Method for manufacturing a free-standing substrate made of monocrystalline semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2005·Granted Aug 5, 2008·12 cites·22 claims
3283US7018910B2Transfer of a thin layer from a wafer comprising a buffer layerSOITEC SILICON ON INSULATOR·Filed 2003·Granted Mar 28, 2006·30 cites·27 claims
3382US12094759B2Method for transferring blocks from a donor substrate onto a receiver substrate by implanting ions in the donor substrate through a mask, bonding the donor substrate to the receiver substrate, and detaching the donor substrate along an embrittlement planeSOITEC SILICON ON INSULATOR·Filed 2023·Granted Sep 17, 2024·0 cites·14 claims
3482US7476930B2Multi-gate FET with multi-layer channelSOITEC SILICON ON INSULATOR·Filed 2007·Granted Jan 13, 2009·9 cites·18 claims
3581US2025301910A1Method for the production of a single-crystal film, in particular piezoelectricSOITEC SILICON ON INSULATOR·Filed 2025·Application pending·0 cites
3680US11549195B2Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxtial growth of a monocrystalline layer of GaAs materialSOITEC SILICON ON INSULATOR·Filed 2019·Granted Jan 10, 2023·2 cites·12 claims
3780US8507361B2Fabrication of substrates with a useful layer of monocrystalline semiconductor materialLETERTRE FABRICE·Filed 2011·Granted Aug 13, 2013·4 cites·23 claims
3880US7498245B2Embrittled substrate and method for making sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Mar 3, 2009·25 cites·29 claims
3980US2025022748A1Method for transferring blocks from a donor substrate onto a receiver substrate by implanting ions in the donor substrate through a mask, bonding the donor substrate to the receiver substrate, and detaching the donorSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
4079US12426507B2Method for producing a crystalline layer of PZT material by transferring a seed layer of SRTIO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZTSOITEC SILICON ON INSULATOR·Filed 2023·Granted Sep 23, 2025·0 cites·19 claims
4179US6902988B2Method for treating substrates for microelectronics and substrates obtained by said methodSOITEC SILICON ON INSULATOR·Filed 2002·Granted Jun 7, 2005·20 cites·25 claims
4279US2024395601A1Structure comprising a support and having a non-flat surfaceSOLTEC·Filed 2024·Application pending·0 cites
4378US12178133B2Methods for designing and producing a device comprising an array of micro-machined elements, and device produced by said methodsSOITEC SILICON ON INSULATOR·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
4477US7001826B2Wafer with a relaxed useful layer and method of forming the waferSOITEC SILICON ON INSULATOR·Filed 2003·Granted Feb 21, 2006·19 cites·15 claims
4576US12087615B2Method for manufacturing a film on a support having a non-flat surfaceSOITEC SILICON ON INSULATOR·Filed 2022·Granted Sep 10, 2024·0 cites·19 claims
4676US7375008B2Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereofSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 20, 2008·6 cites·27 claims
4776US7008857B2Recycling a wafer comprising a buffer layer, after having separated a thin layer therefromSOITEC SILICON ON INSULATOR·Filed 2004·Granted Mar 7, 2006·16 cites·36 claims
4876US2024384432A1Structure comprising monocrystalline layers of aln material on a substrate and substrate for the epitaxial growth of monocrystalline layers of aln materialSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
4975US12052921B2Method for manufacturing a film on a flexible sheetSOITEC SILICON ON INSULATOR·Filed 2022·Granted Jul 30, 2024·0 cites·22 claims
5075US11877514B2Method for producing a crystalline layer of PZT material by transferring a seed layer of SrTiO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZTSOITEC SILICON ON INSULATOR·Filed 2019·Granted Jan 16, 2024·1 cites·19 claims

Showing the top 50 of 142 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →