Inventor · disambiguated record
Bruce M. Green
Also filed as: GREEN BRUCE · GREEN BRUCE M · GREEN BRUCE MCRAE
52 granted patents·11 pending applications·483 citations·filing 2001–2025
98Inventor score
Top patents by PatentIndex Score
63 records- 0197US9799760B2Semiconductor device with selectively etched surface passivationFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 24, 2017·17 cites·18 claims
- 0297US8304271B2Integrated circuit having a bulk acoustic wave device and a transistorHUANG JENN HWA·Filed 2009·Granted Nov 6, 2012·114 cites·19 claims
- 0396US6867078B1Method for forming a microwave field effect transistor with high operating voltageFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Mar 15, 2005·158 cites·30 claims
- 0495US9362198B2Semiconductor devices with a thermally conductive layer and methods of their fabricationVISWANATHAN LAKSHMINARAYAN·Filed 2014·Granted Jun 7, 2016·22 cites·20 claims
- 0593US12148820B2Transistors with source-connected field platesNXP BV·Filed 2021·Granted Nov 19, 2024·4 cites·15 claims
- 0693US8946779B2MISHFET and Schottky device integrationGREEN BRUCE M·Filed 2013·Granted Feb 3, 2015·17 cites·15 claims
- 0791US12327778B2Transistor die with primary and ancillary transistor elementsNXP USA INC·Filed 2022·Granted Jun 10, 2025·2 cites·24 claims
- 0891US9871107B2Device with a conductive feature formed over a cavity and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jan 16, 2018·8 cites·15 claims
- 0991US8410580B2Device having conductive substrate via with catch-pad etch-stopHILL DARRELL G·Filed 2011·Granted Apr 2, 2013·13 cites·20 claims
- 1090US10249615B2MISHFET and Schottky device integrationGREEN BRUCE M·Filed 2015·Granted Apr 2, 2019·7 cites·22 claims
- 1187US12211759B2Circuit die with isolation test structureNXP USA INC·Filed 2022·Granted Jan 28, 2025·1 cites·18 claims
- 1287US10644142B2Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication thereforNXP USA INC·Filed 2017·Granted May 5, 2020·4 cites·13 claims
- 1387US9685345B2Semiconductor devices with integrated Schottky diodes and methods of fabricationGREEN BRUCE M·Filed 2013·Granted Jun 20, 2017·6 cites·19 claims
- 1487US9024324B2GaN dual field plate device with single field plate metalTEPLIK JAMES A·Filed 2012·Granted May 5, 2015·14 cites·22 claims
- 1586US8946776B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2012·Granted Feb 3, 2015·6 cites·18 claims
- 1683US8193591B2Transistor and method with dual layer passivationGREEN BRUCE M·Filed 2006·Granted Jun 5, 2012·10 cites·17 claims
- 1782US10128364B2Semiconductor devices with an enhanced resistivity region and methods of fabrication thereforFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Nov 13, 2018·3 cites·24 claims
- 1882US9276101B2High speed gallium nitride transistor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Mar 1, 2016·3 cites·20 claims
- 1981US9099433B2High speed gallium nitride transistor devicesGREEN BRUCE M·Filed 2012·Granted Aug 4, 2015·5 cites·16 claims
- 2081US9029986B2Transistors with dual layer passivationGREEN BRUCE M·Filed 2012·Granted May 12, 2015·5 cites·12 claims
- 2180US10541324B2Semiconductor device with a recessed ohmic contact and methods of fabricationNXP USA INC·Filed 2017·Granted Jan 21, 2020·2 cites·15 claims
- 2279US7935620B2Method for forming semiconductor devices with low leakage Schottky contactsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted May 3, 2011·6 cites·18 claims
- 2378US9153448B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2015·Granted Oct 6, 2015·2 cites·20 claims
- 2477US10522670B2Semiconductor device with selectively etched surface passivationNXP USA INC·Filed 2017·Granted Dec 31, 2019·2 cites·23 claims
- 2577US9438224B2Devices with signal characteristic dependent control circuitry and methods of operation thereforGREEN BRUCE M·Filed 2014·Granted Sep 6, 2016·3 cites·22 claims
- 2676US7229903B2Recessed semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 12, 2007·21 cites·12 claims
- 2775US8653558B2Semiconductor device and method of makingGREEN BRUCE M·Filed 2011·Granted Feb 18, 2014·4 cites·20 claims
- 2873US9111868B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2012·Granted Aug 18, 2015·2 cites·17 claims
- 2972US12336254B2Semiconductor device with conductive elements formed over dielectric layers and method of fabrication thereforNXP BV·Filed 2024·Granted Jun 17, 2025·0 cites·19 claims
- 3071US9660641B2Devices with signal characteristic dependent control circuitry and methods of operation thereforFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted May 23, 2017·1 cites·22 claims
- 3171US2025267913A1Transistors with self-aligned source-connected field platesNXP USA INC·Filed 2025·Application pending·0 cites
- 3270US10957790B2Semiconductor device with selectively etched surface passivationNXP USA INC·Filed 2018·Granted Mar 23, 2021·1 cites·19 claims
- 3370US10825924B2Semiconductor device with selectively etched surface passivationNXP USA INC·Filed 2017·Granted Nov 3, 2020·1 cites·20 claims
- 3469US8609538B2Methods relating to the fabrication of devices having conductive substrate vias with catch-pad etch-stopsHILL DARRELL G·Filed 2013·Granted Dec 17, 2013·2 cites·20 claims
- 3567US12464799B2Semiconductor device with a field plate having a recessed region and an overhanging portion and method of fabrication thereforNXP USA INC·Filed 2022·Granted Nov 4, 2025·0 cites·26 claims
- 3667US7253455B2pHEMT with barrier optimized for low temperature operationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 7, 2007·4 cites·13 claims
- 3765US12362294B2Wafer with semiconductor devices and integrated electrostatic discharge protectionNXP USA INC·Filed 2021·Granted Jul 15, 2025·0 cites·14 claims
- 3863US12349433B2Transistors with self-aligned source-connected field platesNXP USA INC·Filed 2021·Granted Jul 1, 2025·0 cites·10 claims
- 3962US8592878B2Semiconductor devices with low leakage Schottky contactsGREEN BRUCE M·Filed 2011·Granted Nov 26, 2013·1 cites·12 claims
- 4060US10971613B2Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication thereforNXP USA INC·Filed 2020·Granted Apr 6, 2021·0 cites·21 claims
- 4159US11923424B2Semiconductor device with conductive elements formed over dielectric layers and method of fabrication thereforNXP BV·Filed 2020·Granted Mar 5, 2024·0 cites·17 claims
- 4259US2025210409A1Device with electrical component formed over a cavity and method thereforNXP USA INC·Filed 2023·Application pending·0 cites
- 4359US2025142924A1Semiconductor device with multi-step gate and recessed multi-step field plate with field plate spacers and method of fabricationNXP USA INC·Filed 2023·Application pending·0 cites
- 4459US2025142922A1Semiconductor device with multi-step gate and multi-step field plate and method of fabrication thereforNXP USA INC·Filed 2023·Application pending·0 cites
- 4558US2025203987A1Semiconductor device with multiple device regions and method of fabrication thereforNXP USA INC·Filed 2023·Application pending·0 cites
- 4657US9825162B2Vertical power transistor device, semiconductor die and method of manufacturing a vertical power transistor deviceRENAUD PHILIPPE·Filed 2009·Granted Nov 21, 2017·1 cites·20 claims
- 4757US7253486B2Field plate transistor with reduced field plate resistanceFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Aug 7, 2007·8 cites·20 claims
- 4857US2025142923A1Semiconductor device with multi-step gate and recessed multi-step field plate and method of fabrication thereforNXP USA INC·Filed 2023·Application pending·0 cites
- 4955US10074588B2Semiconductor devices with a thermally conductive layer and methods of their fabricationNXP USA INC·Filed 2017·Granted Sep 11, 2018·0 cites·22 claims
- 5055US10033374B2Devices with signal and temperature characteristic dependent control circuitry and methods of operation thereforNXP USA INC·Filed 2017·Granted Jul 24, 2018·0 cites·23 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →