Inventor · disambiguated record
Brenda D. Kraus
Also filed as: KRAUS BRENDA · KRAUS BRENDA D
51 granted patents·11 pending applications·1,327 citations·filing 1997–2022
99Inventor score
Files withMICRON TECHNOLOGY INC53KRAUS BRENDA D5MARSH EUGENE P2HOFMANN JAMES J1LODESTAR LICENSING GROUP LLC1
Top patents by PatentIndex Score
62 records- 0199US9865456B1Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structuresMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 9, 2018·401 cites·26 claims
- 0297US6737313B1Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layerMICRON TECHNOLOGY INC·Filed 2003·Granted May 18, 2004·108 cites·21 claims
- 0397US6617634B2RuSixOy-containing adhesion layers and process for fabricating the sameMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 9, 2003·86 cites·26 claims
- 0497US6462367B2RuSixOy-containing adhesion layersMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 8, 2002·93 cites·24 claims
- 0596US7575978B2Method for making conductive nanoparticle charge storage elementMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 18, 2009·34 cites·78 claims
- 0696US7473637B2ALD formed titanium nitride filmsMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 6, 2009·30 cites·45 claims
- 0795US11145710B1Electrode/dielectric barrier material formation and structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 12, 2021·5 cites·14 claims
- 0895US6461909B1Process for fabricating RuSixOy-containing adhesion layersMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 8, 2002·61 cites·20 claims
- 0993US11705500B2Assemblies having conductive structures with three or more different materialsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 18, 2023·2 cites·16 claims
- 1092US6737317B2Method of manufacturing a capacitor having RuSixOy-containing adhesion layersMICRON TECHNOLOGY INC·Filed 2002·Granted May 18, 2004·44 cites·23 claims
- 1192US6548405B2Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitrideMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 15, 2003·48 cites·56 claims
- 1291US6365519B2Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitrideMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 2, 2002·42 cites·30 claims
- 1391US6218293B1Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitrideMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 17, 2001·90 cites·26 claims
- 1489US6812990B1Method for making sol gel spacers for flat panel displaysMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 2, 2004·24 cites·6 claims
- 1589US6800937B2RuSixOy-containing adhesion layers and process for fabricating the sameMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 5, 2004·29 cites·22 claims
- 1688US6610568B2Process for fabricating RuSixOy-containing adhesion layersMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 26, 2003·28 cites·23 claims
- 1787US10957775B2Assemblies having conductive structures with three or more different materialsMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 23, 2021·3 cites·33 claims
- 1886US7378129B2Atomic layer deposition methods of forming conductive metal nitride comprising layersMICRON TECHNOLOGY INC·Filed 2003·Granted May 27, 2008·24 cites·60 claims
- 1985US9496355B2Conductive nanoparticlesMICRON TECHNOLOGY INC·Filed 2015·Granted Nov 15, 2016·3 cites·15 claims
- 2084US8314456B2Apparatus including rhodium-based charge trapsMARSH EUGENE P·Filed 2011·Granted Nov 20, 2012·6 cites·25 claims
- 2183US10964532B2Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio featuresMICRON TECHNOLOGY INC·Filed 2017·Granted Mar 30, 2021·2 cites·20 claims
- 2280US6057231AMethod for improved metal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 1999·Granted May 2, 2000·40 cites·50 claims
- 2379US7989290B2Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge trapsMICRON TECHNOLOGY INC·Filed 2009·Granted Aug 2, 2011·6 cites·30 claims
- 2478US6812139B2Method for metal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 2, 2004·17 cites·20 claims
- 2577US8058729B2Titanium nitride filmsKRAUS BRENDA D·Filed 2007·Granted Nov 15, 2011·4 cites·23 claims
- 2677US6867449B2Capacitor having RuSixOy-containing adhesion layersMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 15, 2005·13 cites·23 claims
- 2776US11990528B2Assemblies having conductive structures with three or more different materialsLODESTAR LICENSING GROUP LLC·Filed 2022·Granted May 21, 2024·0 cites·16 claims
- 2872US11651955B2Methods of forming silicon nitride including plasma exposureMICRON TECHNOLOGY INC·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 2972US8124445B2Confined resistance variable memory cell structures and methodsKRAUS BRENDA D·Filed 2010·Granted Feb 28, 2012·2 cites·21 claims
- 3071US11789746B2Computing device rebootMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 17, 2023·0 cites·18 claims
- 3169US6764895B2Process for fabricating RuSixOy-containing adhesion layersMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 20, 2004·8 cites·20 claims
- 3269US6054768AMetal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 25, 2000·24 cites·31 claims
- 3367US6867093B2Process for fabricating RuSixOy-containing adhesion layersMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 15, 2005·7 cites·16 claims
- 3467US6482735B1Method for improved metal fill by treatment of mobility layersMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 19, 2002·23 cites·26 claims
- 3562US7923070B2Atomic layer deposition method of forming conductive metal nitride-comprising layersMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 12, 2011·0 cites·17 claims
- 3662US6984874B2Semiconductor device with metal fill by treatment of mobility layers including forming a refractory metal nitride using TMEDTMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 10, 2006·6 cites·20 claims
- 3762US2022028968A1Electrode/dielectric barrier material formation and structuresMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 3861US8716060B2Confined resistance variable memory cell structures and methodsMICRON TECHNOLOGY INC·Filed 2013·Granted May 6, 2014·0 cites·19 claims
- 3960US11467850B2Computing device rebootMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 11, 2022·0 cites·17 claims
- 4058US2009302371A1Conductive nanoparticlesMICRON TECHNOLOGY INC·Filed 2009·Application pending·0 cites
- 4156US2006139561A1Mold for forming spacers for flat panel displaysHOFMANN JAMES J·Filed 2006·Application pending·0 cites
- 4255US2024234482A9Microelectronic devices including capacitors, and related electronic systems and methodsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 4354US7282408B2Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layerMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 16, 2007·3 cites·20 claims
- 4454US2010075037A1Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD MethodsMARSH EUGENE P·Filed 2008·Application pending·0 cites
- 4554US2012149146A1Confined resistance variable memory cell structures and methodsKRAUS BRENDA D·Filed 2012·Application pending·0 cites
- 4653US8633110B2Titanium nitride filmsKRAUS BRENDA D·Filed 2011·Granted Jan 21, 2014·0 cites·19 claims
- 4753US6740252B2Ruthenium silicide wet etchMICRON TECHNOLOGY INC·Filed 2002·Granted May 25, 2004·2 cites·5 claims
- 4852US12197550B2Providing access to a computing deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 14, 2025·0 cites·17 claims
- 4950US6908569B2Ruthenium silicide wet etchMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 21, 2005·1 cites·9 claims
- 5050US6894306B2Field emission device having a covering comprising aluminum nitrideMICRON TECHNOLOGY INC·Filed 2002·Granted May 17, 2005·1 cites·27 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →