Confined resistance variable memory cell structures and methods

Abstract

Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by performing a process that includes providing a germanium amidinate precursor and a first reactant to a process chamber having the memory cell structure therein and providing an antimony ethoxide precursor and a second reactant to the process chamber subsequent to removing excess germanium.

1 . A confined resistance variable memory cell formed by a process, comprising:
 forming a via in a memory cell structure; and   forming a resistance variable material in the via by performing a process that includes:
 providing a germanium precursor and a first reactant to a process chamber having the memory cell structure therein; and 
 providing an antimony precursor and a second reactant to the process chamber subsequent to removing excess germanium. 
   
     
     
         2 . The confined resistance variable memory cell of  claim 1 , wherein the process includes providing a tellurium precursor to the process chamber subsequent to removing excess antimony. 
     
     
         3 . The confined resistance variable memory cell of  claim 2 , wherein the process includes:
 removing remaining second reactant from the chamber prior to providing the tellurium precursor; and   providing the tellurium precursor to the chamber in the absence of an additional reactant.   
     
     
         4 . The confined resistance variable memory cell of  claim 2 , wherein the tellurium precursor is di-t-butyl telluride. 
     
     
         5 . The confined resistance variable memory cell of  claim 4 , wherein at least one the first and the second reactant is ammonia, and wherein the method includes removing excess ammonia from the chamber prior to introducing the di-t-butyl telluride. 
     
     
         6 . The confined resistance variable memory cell of  claim 4 , wherein performing the process includes forming a GeSbTe (GST) resistance variable material having a composition ratio of about 1:7:2. 
     
     
         7 . The confined resistance variable memory cell of  claim 1 , wherein the germanium precursor comprises a germanium amidinate precursor, and wherein the antimony precursor comprises an antimony ethoxide precursor. 
     
     
         8 . The confined resistance variable memory cell of  claim 1 , wherein the first reactant is the same as the second reactant. 
     
     
         9 . The confined resistance variable memory cell of  claim 1 , wherein at least one of the first and the second reactant is ammonia. 
     
     
         10 . The confined resistance variable memory cell of  claim 1 , wherein performing the process includes forming a GeSb resistance variable material having a germanium composition within a range of 2%-30% and an antimony concentration within a range of 70%-98%. 
     
     
         11 . A confined resistance variable memory cell formed by a process, comprising:
 forming a via in a memory cell structure;   forming a resistance variable material in the via by performing a process that includes:
 providing a germanium precursor to a process chamber having the memory cell structure therein; 
 providing an antimony precursor to the process chamber subsequent to removing excess germanium; and 
 maintaining a flow of a reactant to the chamber during the process. 
   
     
     
         12 . The confined resistance variable memory cell of  claim 11 , including filling the via with the resistance variable material. 
     
     
         13 . The confined resistance variable memory cell of  claim 11 , including using a carrier gas to deliver the germanium precursor and the antimony precursor to the chamber. 
     
     
         14 . The confined resistance variable memory cell of  claim 11 , wherein the reactant is ammonia. 
     
     
         15 . The confined resistance variable memory cell of  claim 11 , wherein the germanium precursor comprises a germanium amidinate precursor. 
     
     
         16 . The confined resistance variable memory cell of  claim 11 , wherein the antimony precursor comprises an antimony ethoxide precursor. 
     
     
         17 . The confined resistance variable memory cell of  claim 11 , wherein the germanium precursor comprises a germanium amidinate precursor, and wherein the antimony precursor comprises an antimony ethoxide precursor. 
     
     
         18 . The confined resistance variable memory cell of  claim 11 , wherein performing the process includes forming a germanium antimony (GeSb) resistance variable material having a germanium composition within a range of 2%-30% and an antimony concentration within a range of 70%-98%. 
     
     
         19 . A confined resistance variable memory cell formed by a process, comprising:
 forming a via in a memory cell structure;   forming a resistance variable material in the via by performing a process that includes:
 providing a germanium precursor and a first reactant to a process chamber having the memory cell structure therein; 
 providing an antimony precursor and a second reactant to the process chamber subsequent to removing excess germanium; and 
 providing a telluride precursor in the absence of additional reactant to the chamber subsequent to removing excess first and second reactant from the chamber. 
   
     
     
         20 . The confined resistance variable memory cell of  claim 19 , wherein the process includes removing excess antimony from the chamber prior to providing the telluride precursor to the chamber. 
     
     
         21 . The confined resistance variable memory cell of  claim 19 , wherein the first and the second reactant is ammonia. 
     
     
         22 . The confined resistance variable memory cell of  claim 19 , including performing the process at a temperature of less than 350° C. 
     
     
         23 . The confined resistance variable memory cell of  claim 19 , wherein the germanium precursor is a germanium amidinate precursor, the antimony precursor is an antimony ethoxide precursor, and the telluride precursor is a di-t-butyl telluride precursor. 
     
     
         24 . The confined resistance variable memory cell of  claim 23 , wherein the process includes vaporizing the germanium amidinate precursor, the antimony ethoxide precursor, and the di-t-butyl telluride precursor prior to providing them to the chamber.