Inventor · disambiguated record
Bradley J. Larsen
Also filed as: LARSEN BRADLEY · LARSEN BRADLEY J
16 granted patents·6 pending applications·259 citations·filing 1993–2012
93Inventor score
Files withHONEYWELL INT INC9ATMEL CORP7LARSEN BRADLEY J2AEROFLEX UTMC MICROELECTRONIC1FECHNER PAUL S1
Top patents by PatentIndex Score
22 records- 0187US5493142AInput/output transistors with optimized ESD protectionATMEL CORP·Filed 1995·Granted Feb 20, 1996·77 cites·24 claims
- 0280US7679139B2Non-planar silicon-on-insulator device that includes an “area-efficient” body tieHONEYWELL INT INC·Filed 2007·Granted Mar 16, 2010·8 cites·16 claims
- 0377US8310021B2Neutron detector with wafer-to-wafer bondingLARSEN BRADLEY J·Filed 2010·Granted Nov 13, 2012·3 cites·18 claims
- 0473US7177489B2Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufactureHONEYWELL INT INC·Filed 2004·Granted Feb 13, 2007·14 cites·57 claims
- 0572US5440159ASingle layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layerATMEL CORP·Filed 1994·Granted Aug 8, 1995·34 cites·12 claims
- 0670US5583380AIntegrated circuit contacts with secured stringersATMEL CORP·Filed 1995·Granted Dec 10, 1996·49 cites·20 claims
- 0767US5352618AMethod for forming thin tunneling windows in EEPROMsATMEL CORP·Filed 1993·Granted Oct 4, 1994·27 cites·11 claims
- 0863US7378705B2Single-poly EEPROM cell with lightly doped MOS capacitorsHONEYWELL INT INC·Filed 2005·Granted May 27, 2008·3 cites·13 claims
- 0963US6890832B1Radiation hardening method for shallow trench isolation in CMOSAEROFLEX UTMC MICROELECTRONIC·Filed 2002·Granted May 10, 2005·11 cites·37 claims
- 1063US6828212B2Method of forming shallow trench isolation structure in a semiconductor deviceATMEL CORP·Filed 2002·Granted Dec 7, 2004·10 cites·17 claims
- 1162US8399845B2Neutron detector cell efficiencyFECHNER PAUL S·Filed 2012·Granted Mar 19, 2013·2 cites·19 claims
- 1262US7964897B2Direct contact to area efficient body tie process flowHONEYWELL INT INC·Filed 2008·Granted Jun 21, 2011·2 cites·20 claims
- 1357US5340764AIntegration of high performance submicron CMOS and dual-poly non-volatile memory devices using a third polysilicon layerATMEL CORP·Filed 1993·Granted Aug 23, 1994·16 cites·15 claims
- 1453US8153985B2Neutron detector cell efficiencyRANDAZZO TODD ANDREW·Filed 2009·Granted Apr 10, 2012·2 cites·16 claims
- 1547US2010006912A1Planar Metal-Insulator-Metal Circuit Element and Method for Planar Integration of SameHONEYWELL INT INC·Filed 2009·Application pending·0 cites
- 1644US2010200918A1Heavy Ion Upset Hardened Floating Body SRAM CellsHONEYWELL INT INC·Filed 2009·Application pending·0 cites
- 1740US2006186509A1Shallow trench isolation structure with active edge isolationHONEYWELL INT INC·Filed 2005·Application pending·0 cites
- 1838US2007232014A1Method of fabricating a planar MIM capacitorHONEYWELL INT INC·Filed 2006·Application pending·0 cites
- 1937US2011186940A1Neutron sensor with thin interconnect stackHONEYWELL INT INC·Filed 2010·Application pending·0 cites
- 2036US8759903B1Method of fabricating total dose hard and thermal neutron hard integrated circuitsLIU MICHAEL S·Filed 2006·Granted Jun 24, 2014·0 cites·14 claims
- 2133US2013049215A1Integrated circuit including front side and back side electrical interconnectsLARSEN BRADLEY J·Filed 2011·Application pending·0 cites
- 2230USRE36777EIntegration of high performance submicron CMOS and dual-poly non-volatile memory devices using a third polysilicon layerATMEL CORP·Filed 1998·Granted Jul 11, 2000·1 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →