Inventor · disambiguated record
Byoung-Jae Bae
Also filed as: BAE BYOUNG J · BAE BYOUNG-JAE
32 granted patents·23 pending applications·194 citations·filing 2004–2023
96Inventor score
Top patents by PatentIndex Score
55 records- 0196US8507353B2Method of forming semiconductor device having self-aligned plugOH GYU-HWAN·Filed 2011·Granted Aug 13, 2013·38 cites·11 claims
- 0296US7943502B2Method of forming a phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 17, 2011·26 cites·12 claims
- 0394US7727884B2Methods of forming a semiconductor device including a phase change material layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·19 cites·20 claims
- 0488US7759667B2Phase change memory device including resistant materialSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·17 cites·9 claims
- 0587US8263963B2Phase change memory devicePARK YOUNG-LIM·Filed 2011·Granted Sep 11, 2012·3 cites·7 claims
- 0685US7867880B2Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursorsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 11, 2011·6 cites·14 claims
- 0784US8790976B2Method of forming semiconductor device having self-aligned plugSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 29, 2014·5 cites·9 claims
- 0883US9166746B2Operating method and apparatus according to data duplicate retransmission in mobile communication systemBAE BYOUNG-JAE·Filed 2010·Granted Oct 20, 2015·6 cites·8 claims
- 0983US7361228B2Showerheads for providing a gas to a substrate and apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·15 cites·25 claims
- 1081US7910967B2Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 22, 2011·7 cites·26 claims
- 1179US9985752B2Operating method and apparatus according to data duplicate retransmission in mobile communication systemSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 29, 2018·2 cites·12 claims
- 1278US7803654B2Variable resistance non-volatile memory cells and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 28, 2010·6 cites·25 claims
- 1377US8340128B2Apparatus and method for generating and parsing MAC PDU in a mobile communication systemJOO YANG-ICK·Filed 2010·Granted Dec 25, 2012·4 cites·22 claims
- 1476US8680500B2Phase change memory devices having buried metal silicide patternsOH GYU-HWAN·Filed 2012·Granted Mar 25, 2014·3 cites·13 claims
- 1576US7796648B2Apparatus and method for generating and parsing MAC PDU in a mobile communication systemSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 14, 2010·5 cites·20 claims
- 1676US7585683B2Methods of fabricating ferroelectric devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·5 cites·23 claims
- 1774US10476638B2Operating method and apparatus according to data duplicate retransmission in mobile communication systemSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 12, 2019·1 cites·20 claims
- 1872US7586774B2Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·5 cites·23 claims
- 1971US7312091B2Methods for forming a ferroelectric layer and capacitor and FRAM using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 25, 2007·10 cites·37 claims
- 2070US8142846B2Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory deviceBAE BYOUNG-JAE·Filed 2008·Granted Mar 27, 2012·4 cites·19 claims
- 2169US8343798B2Method fabricating phase-change semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·2 cites·19 claims
- 2267US9735349B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 15, 2017·1 cites·17 claims
- 2367US8804556B2System and method for handover in wireless communication systemBAE BYOUNG-JAE·Filed 2011·Granted Aug 12, 2014·2 cites·10 claims
- 2465US2012319069A1Phase Change Memory DevicePARK YOUNG-LIM·Filed 2012·Application pending·0 cites
- 2564US11088787B2Operating method and apparatus according to data duplicate retransmission in mobile communication systemSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 10, 2021·0 cites·22 claims
- 2659US8834968B2Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Sep 16, 2014·0 cites·15 claims
- 2757US9008656B2Method and apparatus of searching for operator network in a multi-radio access technology environmentSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 14, 2015·1 cites·13 claims
- 2857US2006231026A1Vapor deposition systems having separate portions configured for purging using different materialsLEE MOON-SOOK·Filed 2006·Application pending·0 cites
- 2956US8392632B2Method and apparatus for data processing in mobile communication systemKIM HYE-JEONG·Filed 2008·Granted Mar 5, 2013·1 cites·13 claims
- 3056US2009075420A1Method of forming chalcogenide layer including te and method of fabricating phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3155US8852686B2Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory deviceBAE BYOUNG-JAE·Filed 2012·Granted Oct 7, 2014·0 cites·19 claims
- 3255US2008096386A1Method of forming a phase-changeable layer and method of manufacturing a semiconductor memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3353US2007158731A1Memory Devices Employing Ferroelectric Layer as Information Storage Elements and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3450US2024349615A1Magnetic memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3549US2005011444A1Vapor deposition systems having separate portions configured for purging using different materials and methods of operating sameFiled 2004·Application pending·0 cites
- 3648US10134980B2Magnetoresistive random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 20, 2018·0 cites·15 claims
- 3748US9907000B2Method and apparatus for identifying microcells in macrocells in wireless communication systems, and handover method and system using sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 27, 2018·0 cites·23 claims
- 3848US2006011298A1Showerhead with branched gas receiving channel and apparatus including the same for use in manufacturing semiconductor substratesLIM JI-EUN·Filed 2005·Application pending·0 cites
- 3947US9985202B2Method of fabricating memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 29, 2018·0 cites·19 claims
- 4047US2008272355A1Phase change memory device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4146US2008148136A1Apparatus and method for transmitting/receiving data in a mobile communication systemSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4244US2004163597A1Apparatus for fabricating semiconductor devices, heating arrangement, shower head arrangement, method of reducing thermal disturbance during fabrication of a semiconductor device, and method of exchanging heat during fabrication of a semiconductor deviceFiled 2004·Application pending·0 cites
- 4342US2006174827A1Apparatus for manufacturing semiconductor deviceBAE BYOUNG-JAE·Filed 2006·Application pending·0 cites
- 4442US2006183250A1Methods of fabricating ferroelectric capacitors utilizing a partial chemical mechanical polishing processSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4539US7583095B2High-density probe arraySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 1, 2009·0 cites·16 claims
- 4639US2007045689A1Ferroelectric Structures Including Multilayer Lower Electrodes and Multilayer Upper Electrodes, and Methods of Manufacturing SameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4738US2006263909A1Methods of fabricating thin ferroelectric layers and capacitors having ferroelectric dielectric layers thereinCHOI SUK-HUN·Filed 2006·Application pending·0 cites
- 4838US2005155551A1Deposition apparatus and related methods including a pulse fluid supplier having a bufferFiled 2004·Application pending·0 cites
- 4937US2012289019A1Methods of forming a pattern and methods of manufacturing a semiconductor device using the sameIM DONG-HYUN·Filed 2012·Application pending·0 cites
- 5037US2006273366A1Methods of manufacturing ferroelectric capacitors and semiconductor devicesKO HWA-YOUNG·Filed 2006·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →