Inventor · disambiguated record
Byoungjae Bae
Also filed as: BAE BYOUNGJAE
12 granted patents·9 pending applications·29 citations·filing 2009–2025
86Inventor score
Top patents by PatentIndex Score
21 records- 0188US11683992B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 20, 2023·2 cites·18 claims
- 0285US8598010B2Methods of forming variable-resistance memory devices and devices formed therebyJOO HEUNG JIN·Filed 2011·Granted Dec 3, 2013·10 cites·17 claims
- 0379US8980679B2Apparatus and methods for forming phase change layer and method of manufacturing phase change memory deviceIM DONG-HYUN·Filed 2009·Granted Mar 17, 2015·6 cites·9 claims
- 0478US10347819B2Magnetic memory devices having conductive pillar structures including patterning residue componentsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 9, 2019·2 cites·15 claims
- 0573US9515255B2Methods of manufacturing semiconductor devices using cavities to distribute conductive patterning residuePARK JONGCHUL·Filed 2014·Granted Dec 6, 2016·2 cites·18 claims
- 0665US9502643B2Semiconductor device, magnetic memory device, and method of fabricating the sameBAE BYOUNGJAE·Filed 2015·Granted Nov 22, 2016·2 cites·20 claims
- 0764US9893272B2Magnetic memory device comprising oxide patternsKANG SHIN JAE·Filed 2015·Granted Feb 13, 2018·2 cites·18 claims
- 0863US2025351377A1Variable resistance memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0961US10164170B2Semiconductor deviceSUH KISEOK·Filed 2017·Granted Dec 25, 2018·1 cites·20 claims
- 1060US9634240B2Magnetic memory devicesPARK JONGCHUL·Filed 2014·Granted Apr 25, 2017·2 cites·18 claims
- 1160US2025079302A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1257US2024397831A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1351US2025287609A1Method of fabricating variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1450US2024164220A1Magnetoresistive random access deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1550US2024074208A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1650US2024324240A1Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1746US12408350B2Semiconductor devices having uppermost interconnection lines protruding beyond top surface of lower insulating layer on cell regionSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·18 claims
- 1844US2025329353A1Variable resistance memory device including protrusions and recessesSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1939US12336437B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·17 claims
- 2038US8810003B2Semiconductor device and method of fabricating the sameBAE BYOUNGJAE·Filed 2012·Granted Aug 19, 2014·0 cites·14 claims
- 2135US2014117477A1Magnetic memory devices and methods of fabricating the samePARK JONGCHUL·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →