Inventor · disambiguated record
Byungkook Kong
Also filed as: KONG BYUNGKOOK
10 granted patents·1 pending application·68 citations·filing 2013–2022
87Inventor score
Technology areasH10P
Files withAPPLIED MATERIALS INC11
Top patents by PatentIndex Score
11 records- 0195US10347500B1Device fabrication via pulsed plasmaAPPLIED MATERIALS INC·Filed 2018·Granted Jul 9, 2019·19 cites·20 claims
- 0293US10580657B2Device fabrication via pulsed plasmaAPPLIED MATERIALS INC·Filed 2019·Granted Mar 3, 2020·9 cites·20 claims
- 0392US9299580B2High aspect ratio plasma etch for 3D NAND semiconductor applicationsAPPLIED MATERIALS INC·Filed 2014·Granted Mar 29, 2016·17 cites·20 claims
- 0482US9287124B2Method of etching a boron doped carbon hardmaskAPPLIED MATERIALS INC·Filed 2014·Granted Mar 15, 2016·8 cites·17 claims
- 0581US10727075B2Uniform EUV photoresist patterning utilizing pulsed plasma processAPPLIED MATERIALS INC·Filed 2017·Granted Jul 28, 2020·3 cites·17 claims
- 0680US9064812B2Aspect ratio dependent etch (ARDE) lag reduction process by selective oxidation with inert gas sputteringAPPLIED MATERIALS INC·Filed 2013·Granted Jun 23, 2015·6 cites·20 claims
- 0772US9390923B2Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch processAPPLIED MATERIALS INC·Filed 2014·Granted Jul 12, 2016·3 cites·20 claims
- 0865US9418867B2Mask passivation using plasmaAPPLIED MATERIALS INC·Filed 2014·Granted Aug 16, 2016·2 cites·12 claims
- 0963US10847368B2EUV resist patterning using pulsed plasmaAPPLIED MATERIALS INC·Filed 2017·Granted Nov 24, 2020·1 cites·18 claims
- 1049US2023260802A1Highly selective silicon etchingAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1144US9627216B2Method for forming features in a silicon containing layerAPPLIED MATERIALS INC·Filed 2014·Granted Apr 18, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →