Inventor · disambiguated record
Byeong-Chan Lee
Also filed as: LEE BYEONG-CHAN · LEE BYEONG-RYEOL
68 granted patents·25 pending applications·903 citations·filing 2002–2025
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD50APPLIED MATERIALS INC17KIM JIN-BUM4KIM SEOK-HOON3LEE SEUNG HUN3
Top patents by PatentIndex Score
93 records- 0198US7074662B2Methods for fabricating fin field effect transistors using a protective layer to reduce etching damageSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 11, 2006·176 cites·43 claims
- 0297US9153692B2Semiconductor device having a stress film on a side surface of a finSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 6, 2015·40 cites·17 claims
- 0396US7320908B2Methods of forming semiconductor devices having buried oxide patternsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 22, 2008·34 cites·14 claims
- 0496US7141856B2Multi-structured Si-finSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·104 cites·10 claims
- 0595US9761719B2Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 12, 2017·19 cites·20 claims
- 0695US9595611B2FinFET with a single contact to multiple fins bridged together to form a source/drain region of the transistorKIM SEOK-HOON·Filed 2014·Granted Mar 14, 2017·21 cites·20 claims
- 0794US7534686B2Multi-structured Si-fin and method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·26 cites·15 claims
- 0894US7535061B2Fin-field effect transistors (Fin-FETs) having protection layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·23 cites·15 claims
- 0993US10388791B2Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 20, 2019·8 cites·6 claims
- 1092US9397219B2Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devicesKIM SEOK-HOON·Filed 2015·Granted Jul 19, 2016·8 cites·20 claims
- 1192US7385237B2Fin field effect transistors with low resistance contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 10, 2008·24 cites·25 claims
- 1291US8304318B2Methods of fabricating MOS transistors having recesses with elevated source/drain regionsSON YONG-HOON·Filed 2011·Granted Nov 6, 2012·9 cites·10 claims
- 1390US7071048B2Methods of fabricating fin field effect transistors having capping insulation layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 4, 2006·40 cites·20 claims
- 1489US9881838B2Semiconductor devices having multiple gate structures and methods of manufacturing such devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 30, 2018·5 cites·12 claims
- 1589US8664633B2Non-volatile memory devices having resistance changeable elements and related systems and methodsPARK HEUNG-KYU·Filed 2011·Granted Mar 4, 2014·17 cites·20 claims
- 1688US8039350B2Methods of fabricating MOS transistors having recesses with elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·9 cites·22 claims
- 1788US7122871B2Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·35 cites·13 claims
- 1887US9793356B2Semiconductor device and method for fabricating the sameYOO JEONG-HO·Filed 2015·Granted Oct 17, 2017·11 cites·25 claims
- 1987US8815672B2Methods of manufacturing semiconductor devicesLEE SEUNG-HUN·Filed 2011·Granted Aug 26, 2014·8 cites·22 claims
- 2087US7521301B2Methods for fabricating integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 21, 2009·10 cites·12 claims
- 2187US7394117B2Fin field effect transistors including epitaxial finsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 1, 2008·9 cites·13 claims
- 2287US6849520B2Method and device for forming an STI type isolation in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 1, 2005·38 cites·2 claims
- 2386US9972716B2Semiconductor devicesKIM JIN BUM·Filed 2015·Granted May 15, 2018·5 cites·18 claims
- 2486US9368495B2Semiconductor devices having bridge layer and methods of manufacturing the sameKIM SEOK-HOON·Filed 2014·Granted Jun 14, 2016·6 cites·17 claims
- 2586US7642589B2Fin field effect transistors having capping insulation layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 5, 2010·9 cites·6 claims
- 2684US8008698B2Semiconductor memory devices having vertical channel transistors and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 30, 2011·11 cites·18 claims
- 2783US7176067B2Methods of fabricating fin field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 13, 2007·23 cites·24 claims
- 2882US9608117B2Semiconductor devices including a finFETSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 28, 2017·4 cites·20 claims
- 2982US9590103B2Semiconductor devices having multiple gate structures and methods of manufacturing such devicesKIM YOON HAE·Filed 2016·Granted Mar 7, 2017·4 cites·20 claims
- 3082US9275995B2Semiconductor devices having composite spacers containing different dielectric materialsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 1, 2016·6 cites·15 claims
- 3181US10008600B2Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 26, 2018·3 cites·17 claims
- 3280US7429504B2Heterogeneous group IV semiconductor substrates, integrated circuits formed on such substrates, and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 30, 2008·6 cites·16 claims
- 3380US6890823B2Methods of forming integrated circuits with thermal oxide layers on side walls of gate electrodes wherein the source and drain are higher than the gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 10, 2005·28 cites·30 claims
- 3479US9735158B2Semiconductor devices having bridge layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 15, 2017·2 cites·20 claims
- 3577US10969129B2Apparatus and method for controlling air conditioner in air conditioning systemSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 6, 2021·4 cites·20 claims
- 3677US9240461B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 19, 2016·4 cites·14 claims
- 3777US7141456B2Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·16 cites·13 claims
- 3876US6660613B2Method and device for forming an STI type isolation in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 9, 2003·18 cites·22 claims
- 3975US9112015B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 18, 2015·4 cites·13 claims
- 4074US10727348B2Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 28, 2020·1 cites·20 claims
- 4174US7683405B2MOS transistors having recesses with elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 23, 2010·12 cites·15 claims
- 4273US7268396B2Finfets having first and second gates of different resistivitiesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 11, 2007·15 cites·15 claims
- 4373US2025266295A1Void-free contact trench fill in gate-all-around fet archtectureAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 4471US7579249B2Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 25, 2009·3 cites·7 claims
- 4571US6900102B2Methods of forming double gate electrodes using tunnel and trenchSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 31, 2005·13 cites·28 claims
- 4668US11923441B2Gate all around I/O engineeringAPPLIED MATERIALS INC·Filed 2022·Granted Mar 5, 2024·0 cites·15 claims
- 4767US2022254647A1Formation of bottom isolationAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 4866US12327761B2Void-free contact trench fill in gate-all-around FET architectureAPPLIED MATERIALS INC·Filed 2022·Granted Jun 10, 2025·0 cites·13 claims
- 4966US11450759B2Gate all around I/O engineeringAPPLIED MATERIALS INC·Filed 2020·Granted Sep 20, 2022·0 cites·19 claims
- 5066US7205609B2Methods of forming semiconductor devices including fin structures and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 17, 2007·10 cites·24 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →